Patents by Inventor Ta-Chuan Wei

Ta-Chuan Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180165241
    Abstract: A channel switching device, a memory storage device and a channel switching method are provided. The channel switching device includes a signal analysis module and a switch module. The signal analysis module is configured to analyze non-power signal from at least one of a plurality of connection interface units of the memory storage device. The switch module is configured to turn on a first channel coupled to a first connection interface unit among the connection interface units of the memory storage device according to an analysis result of the non-power signal, where the first channel which is turned on is for receiving first input signal from the first connection interface unit or transmitting first output signal to the first connection interface unit. Therefore, a probability of mistakenly enabling or disabling a specific connection interface unit of a memory storage device can be reduced.
    Type: Application
    Filed: February 10, 2017
    Publication date: June 14, 2018
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Wei-Ting Wei, Wei-Yung Chen, Yun-Chieh Chen, Ta-Chuan Wei
  • Patent number: 9317418
    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: April 19, 2016
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen, Yu-Chung Shen
  • Patent number: 9310869
    Abstract: A memory storage device, a memory control circuit unit and a power supply method are provided. The power supply method includes: providing a first power voltage to a host interface circuit of the memory storage device; providing a second power voltage to a memory management circuit of the memory storage device; providing a third power voltage to a memory interface circuit of the memory storage device, wherein a reference voltage terminal of the memory interface circuit is coupled to a power input terminal of the memory management circuit. Thus, the overheat problem of the memory storage device due to the voltage conversion may be improved.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: April 12, 2016
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Chih-Jen Hsu, Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen
  • Publication number: 20150323969
    Abstract: A memory storage device, a memory control circuit unit and a power supply method are provided. The power supply method includes: providing a first power voltage to a host interface circuit of the memory storage device; providing a second power voltage to a memory management circuit of the memory storage device; providing a third power voltage to a memory interface circuit of the memory storage device, wherein a reference voltage terminal of the memory interface circuit is coupled to a power input terminal of the memory management circuit. Thus, the overheat problem of the memory storage device due to the voltage conversion may be improved.
    Type: Application
    Filed: August 19, 2014
    Publication date: November 12, 2015
    Inventors: Chih-Jen Hsu, Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen
  • Publication number: 20150305143
    Abstract: A multi-layer printed circuit board structure, a connector module and a memory storage device are provided. The multi-layer printed circuit board structure includes a first layout layer and a second layout layer. The first layout layer includes a shielding element and at least one pad. The shielding element provides the grounding voltage. The second layout layer is disposed corresponding to the first layout layer and includes at least one wire, and one end of each wire is coupled to one of the pads. A predefined proportion of the wire is covered by a projection plane of the shielding element projected on the second layout layer.
    Type: Application
    Filed: June 6, 2014
    Publication date: October 22, 2015
    Inventors: Yun-Chieh Chen, Shih-Kung Lin, Ta-Chuan Wei, Hsiang-Hsiung Yu
  • Patent number: 9155189
    Abstract: A multi-layer printed circuit board structure, a connector module and a memory storage device are provided. The multi-layer printed circuit board structure includes a first layout layer and a second layout layer. The first layout layer includes a shielding element and at least one pad. The shielding element provides the grounding voltage. The second layout layer is disposed corresponding to the first layout layer and includes at least one wire, and one end of each wire is coupled to one of the pads. A predefined proportion of the wire is covered by a projection plane of the shielding element projected on the second layout layer.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: October 6, 2015
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Yun-Chieh Chen, Shih-Kung Lin, Ta-Chuan Wei, Hsiang-Hsiung Yu
  • Publication number: 20140297936
    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.
    Type: Application
    Filed: June 17, 2014
    Publication date: October 2, 2014
    Inventors: Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen, Yu-Chung Shen
  • Patent number: 8837248
    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: September 16, 2014
    Assignee: Phison Electronics Corp.
    Inventors: Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen, Yu-Chung Shen
  • Patent number: 8416621
    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: April 9, 2013
    Assignee: Phison Electronics Corp.
    Inventors: Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen, Yu-Chung Shen
  • Publication number: 20120089766
    Abstract: A non-volatile memory storage apparatus having a connector, an energy storage circuit, a power regulator and supply circuit, a non-volatile memory module, a memory controller and a buffer memory is provided. The power regulator and supply circuit is configured for transforming an output voltage from the energy storage circuit into a first voltage used for the non-volatile memory module and a second voltage used for the memory controller and the buffer memory. The memory controller is configured for writing data stored temporarily in the buffer memory into the non-volatile memory module with a special writing mode when receiving a detecting signal indicating that an input voltage is continuously smaller than a predetermined voltage for a predetermined period or receiving a detecting signal indicating that an inactive status of the connector or receiving a suspend mode signal, a warm reset signal or a hot reset signal from a host system.
    Type: Application
    Filed: February 14, 2011
    Publication date: April 12, 2012
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Hsiang-Hsiung Yu, Ta-Chuan Wei, Yun-Chieh Chen, Yu-Chung Shen
  • Publication number: 20090209137
    Abstract: The present invention relates to a power socket, comprises: at least two metal pins respectively and integratedly formed by punching and bending a solid round-column shaped metal wire, so one end of each of the metal pins is defined as a solid round-column shaped contact section, and the other end of each of the metal pins is defined as a flat terminal section, and the top end of each of the contact sections is provided with an arc-shaped head section; and an insulating seat member which is a solid member formed via an operation of plastic injecting formation, the insulating seat member is served to cover and retained the at least two metal pins, so a connecting hole is formed on one surface of the seat member for accommodating and positioning the at least two round-column shaped contact sections, the other surface of the seat member is served to let the at least two flat terminal sections expose outside.
    Type: Application
    Filed: July 28, 2008
    Publication date: August 20, 2009
    Inventors: Hung-Tsu HSU, Ta-Chuan Wei