Patents by Inventor Ta-Chuan Yeh

Ta-Chuan Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System for mental health clinical application
    Patent number: 10325066
    Abstract: A system for mental health clinical application includes a virtual reality (VR) headset, a physiological sensor device and a computer device. The computer device is used to perform an illness test on a user by establishing a virtual 3D environment via the VR headset according to test data provided by the computer device. The computer device receives, from the physiological sensor device, a physiological signal of the user in response to the illness test to analyze an illness condition of the user.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: June 18, 2019
    Inventor: Ta-Chuan Yeh
  • SYSTEM FOR MENTAL HEALTH CLINICAL APPLICATION
    Publication number: 20180011971
    Abstract: A system for mental health clinical application includes a virtual reality (VR) headset, a physiological sensor device and a computer device. The computer device is used to perform an illness test on a user by establishing a virtual 3D environment via the VR headset according to test data provided by the computer device. The computer device receives, from the physiological sensor device, a physiological signal of the user in response to the illness test to analyze an illness condition of the user.
    Type: Application
    Filed: June 19, 2017
    Publication date: January 11, 2018
    Inventor: Ta-Chuan YEH
  • Method of manufacturing a capacitor deep trench and of etching a deep trench opening
    Patent number: 8377829
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: February 19, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang
  • TRENCH CAPACITOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080213967
    Abstract: Method of manufacturing a trench capacitor includes providing a substrate having a memory array region and a logic region, performing a shallow trench isolation (STI) process for forming at least a STI in the substrate within each of the memory array regions and the logic regions, forming a patterned hard mask and the hard mask exposing a portion of the STI and a portion of the substrate surrounding the STI on the substrate, performing a first etching process to form first deep trenches through the patterned hard mask, performing a second etching process to form second deep trenches extending downwardly from the first deep trenches respectively, and forming a capacitor structure in each of the first deep trenches and the second deep trenches.
    Type: Application
    Filed: February 14, 2008
    Publication date: September 4, 2008
    Inventors: Yi-Nan Su, Ta-Chuan Yeh
  • Method of manufacturing a capacitor deep trench and of etching a deep trench opening
    Patent number: 7344954
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Grant
    Filed: January 3, 2006
    Date of Patent: March 18, 2008
    Assignee: United Microelectonics Corp.
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang
  • METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING
    Publication number: 20080038931
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Application
    Filed: October 12, 2007
    Publication date: February 14, 2008
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang
  • METHOD OF MANUFACTURING A CAPACITOR DEEP TRENCH AND OF ETCHING A DEEP TRENCH OPENING
    Publication number: 20070155089
    Abstract: A substrate is provided having an oxide layer, a first nitride-silicon, a STI, and a second nitride-silicon. A pattern poly-silicon layer on the second nitride-silicon layer is etched to form a deep trench opening. Etching the pattern poly-silicon layer also deepens the deep trench opening. Then, a conductive layer is filled in the deep trench opening.
    Type: Application
    Filed: January 3, 2006
    Publication date: July 5, 2007
    Inventors: Ta-Chuan Yeh, Ni-Min Chung, Kao-Su Huang, Yung-Chang Lin, Ruey-Chyr Lee, Chien-Kuo Wang