Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: A semiconductor device includes a substrate, a first stack of semiconductor nanosheets, a second stack of semiconductor nanosheets, a gate structure and a first dielectric wall. The substrate includes a first fin and a second fin. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets is disposed on the second fin. The gate structure wraps the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall is disposed between the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall includes at least one neck portion between adjacent two semiconductor nanosheets of the first stack.

Abstract: A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.

Abstract: A semiconductor structure includes spaced apart first and second fins over a substrate, a separating wall over the substrate and having opposite first and second wall surfaces, multiple first channel features extending away from the first wall surface over the first fin such that the first channel features are spaced apart, multiple second channel features extending away from the second wall surface over the second fin such that the second channel features are spaced apart, two spaced apart first epitaxial structures on the first fin such that each first channel feature interconnects the first epitaxial structures, two spaced apart second epitaxial structures on the second fin such that each second channel feature interconnects the second epitaxial structures, and a dielectric structure including at least one bottom dielectric portion separating at least one of the first and second epitaxial structures from a corresponding first and second fins.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.

Abstract: A semiconductor device includes a substrate, first and second stacks of semiconductor nanosheets, a gate structure, first and second strained layers and first and second dielectric walls. The substrate includes first and second fins. The first and second stacks of semiconductor nanosheets are disposed on the first and second fins respectively. The gate structure wraps the first and second stacks of semiconductor nanosheets. The first and second strained layers are respectively disposed on the first and second fins and abutting the first and second stacks of semiconductor nanosheets. The first dielectric wall is disposed on the substrate and located between the first and second strained layers. The second dielectric wall is disposed on the first dielectric wall and located between the first and second strained layers. A top surface of the second dielectric wall is lower than top surfaces of the first and second strained layers.

Abstract: A water spraying gun includes a gun body having a mounting cavity with an upright mounting wall and a horizontal base wall. The mounting wall is formed with a pair of horizontal insert plates below amounting hole. A receiving space is formed between the insert plates and the base wall. A valve switch is mounted on the gun body within the mounting cavity. An operating lever has a mounting head portion with a vertical connecting rib extending between spaced-apart top and bottom walls, a pair of insert grooves on opposite sides of the connecting rib and between the top and bottom walls, and a forward mounting projection. The bottom wall has a valve engaging portion for engaging the valve switch. The mounting projection and the bottom wall extend respectively into the mounting hole and the receiving space to enable the insert plates to extend respectively into the insert grooves.

Abstract: A water spraying gun includes a gun body having a mounting cavity with an upright mounting wall and a horizontal base wall. The mounting wall is formed with a pair of horizontal insert plates below amounting hole. A receiving space is formed between the insert plates and the base wall. A valve switch is mounted on the gun body within the mounting cavity. An operating lever has a mounting head portion with a vertical connecting rib extending between spaced-apart top and bottom walls, a pair of insert grooves on opposite sides of the connecting rib and between the top and bottom walls, and a forward mounting projection. The bottom wall has a valve engaging portion for engaging the valve switch. The mounting projection and the bottom wall extend respectively into the mounting hole and the receiving space to enable the insert plates to extend respectively into the insert grooves.

Abstract: A faucet assembly includes a faucet body having an upright portion defining a cartridge receiving chamber. The faucet body further has an inlet passage in fluid communication with the cartridge receiving chamber and connected fluidly to a water supply source, and an outlet passage in fluid communication with the cartridge receiving chamber. A filtering device includes a filtering cartridge that is disposed removably within the cartridge receiving chamber, and that has an outer wall surface cooperating with the upright portion to define upper and lower watertight seals therebetween, and an inner wall surface that defines a water passage chamber between the upper and lower watertight seals. The water passage chamber has upper and lower ends that are in fluid communication with the outlet and inlet passages of the cartridge receiving chamber. A spout unit is attached to the upright portion of the faucet body, and includes a spout pipe with a discharging port for release of filtered water therefrom.

Abstract: A faucet assembly includes a body, a pressure-stabilizing device, a temperature adjustment device, a flow-rate control valve, and a faucet end unit. The pressure-stabilizing device is disposed between a pair of cold-water and hot-water input passages and a pair of cold-water and hot-water output passages so as to permit flow of cold water and hot water from the cold-water and hot-water input passages into cold-water and hot-water inlets in the temperature adjustment device through the cold-water and hot-water output passages at the same flow rate even when the water pressures in the cold-water and hot-water input passages are different. The cold and hot water flow from the cold-water and hot-water inlets to a water discharge port at a ratio, which can be selected by rotating a rotary knob, thereby feeding a selected temperature of water to the faucet end unit. The flow-rate control valve is disposed between the temperature adjustment device and the faucet end unit.

Abstract: A faucet assembly includes a water mixing chamber for receiving water from hot and cold water inflow passages, a transit chamber in fluid communication with the water mixing chamber, and a flow direction controlling body with a communicating port disposed downstream of the transit chamber, and two outflow ports respectively communicating with two outlets. A valve has a bottom wall facing toward and in sliding contact with and rotatable relative to the flow direction controlling body, and an annular wall with a first passage in fluid communication with the communicating port. The bottom wall has a second passage rotatable to communicate with one of the outflow ports.

Abstract: A faucet assembly includes a body, a pressure-stabilizing device, a temperature adjustment device, a flow-rate control valve, and a faucet end unit. The pressure-stabilizing device is disposed between a pair of cold-water and hot-water input passages and a pair of cold-water and hot-water output passages so as to permit flow of cold water and hot water from the cold-water and hot-water input passages into cold-water and hot-water inlets in the temperature adjustment device through the cold-water and hot-water output passages at the same flow rate even when the water pressures in the cold-water and hot-water input passages are different. The cold and hot water flow from the cold-water and hot-water inlets to a water discharge port at a ratio, which can be selected by rotating a rotary knob, thereby feeding a selected temperature of water to the faucet end unit. The flow-rate control valve is disposed between the temperature adjustment device and the faucet end unit.

Abstract: A faucet assembly includes synchronously rotatable first and second spouts for releasing filtered and unfiltered water therefrom.