Abstract: A wafer holder device having a heating function includes a fixing ring, a holder plate, and a heating plate. The fixing ring surrounds a hollow area, and the fixing ring includes a top and a bottom. The hollow area connects the top and the bottom. The holder plate includes a holding surface and a bottom surface. The holder plate is removably fixed to the top of the fixing ring, and the bottom surface of the holder plate covers the hollow area. A coefficient of thermal expansion of the holder plate is smaller than a coefficient of thermal expansion of the fixing ring.

Abstract: A wafer holding device configured to fix a and position a wafer having a positioning structure. The wafer holding device includes a base, a holder plate, pushing pins, a linear actuator, and a positioning member. The holder plate is disposed on the base. An upper surface of the holder plate is provided with an adsorption structure for adsorbing and fixing the wafer. The pushing pins are disposed on the upper surface in a protruding manner, and each pushing pin is disposed on the holder plate with respect to a predetermined datum center on the holder plate. The linear actuator is disposed on the base, and an actuating direction of the linear actuator is in parallel to the upper surface. The positioning member is driven by the linear actuator to move in the actuating direction to contact and push against the positioning structure of the wafer.

Abstract: A holder plate for negative pressure chucking, in which the holder plate is plate body comprising a holding surface and a bottom surface. Air passages are formed inside the holder plate and communicates the holding surface and the bottom surface, and the air passages form a plurality of ventilation openings on the holding surface. A total area of an opening of the ventilation openings in the holding surface is less than 50% of the area of the holder plate and greater than 0.2% of the area of the holder plate. The thermal conductivity of the holder plate is greater than 100 W/mK; wherein W is watts, m is meters, and K is the absolute temperature scale.

Abstract: A plate cooling device for cooling carrier plate of a wafer, includes a cooling plate and a plurality of contact pads. The cooling plate includes an upper surface; wherein the upper surface is provided with a cooling area for placing the wafer thereon. The contact pads are disposed on the upper surface. The contact pads protrude on the upper surface, and the total area of the contact pads is less than 3% of the area of the carrier plate.

Abstract: A low concentration ozone gas supply device includes an ozone dilution tank, an ozone generator, a dilution gas supplier, and plural gas reservoir. The ozone dilution tank is provided with a dilution space, and the ozone dilution tank is provided with an overflow vent connected to the dilution space. The ozone generator is configured to continuously supply ozone to the dilution space of the ozone dilution tank. The dilution gas supplier is configured to supply a dilution gas to the dilution space, so that the ozone is mixed with the dilution gas in the dilution space to form the low concentration ozone gas, and the low concentration ozone gas in the dilution space continuously overflows via the overflow vent. The gas reservoirs are connected to the dilution space; wherein the volume of the dilution space is larger than the sum of the volumes of gas reservoirs.

Abstract: A UV-assisted and plasma-enhanced process method includes: providing a lower chamber and a reaction space defined therein; providing an upper cover, wherein the upper cover has a window and vent holes; sealing a chamber opening of the lower chamber with the upper cover to form a reaction chamber; providing an outer tube body and an inner tube body disposed in the outer tube body, the outer tube body covering the window and the vent holes, and the inner tube body connected to the window; providing a UV light source at a top end of the inner tube body; providing an induction coil around the outer tube body; inducing a first gas to a first gas chamber in the inner tube body and a second gas to the second gas chamber between the inner and outer tube bodies; and activating the UV light source and the induction coil optionally.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: A particle prevention method in chamber includes providing a shielding ring, wherein the shielding ring includes a first side wall, a second side wall, and a bottom, the second side wall is parallel to the first side wall, and the bottom is connected to the first side wall, and the second side wall to form an annular groove area; connecting the first side wall to the reaction chamber with the first side wall extending toward an upper portion of a accommodating space of a reaction chamber; fixing a first deflector plate to the first side wall, wherein the first deflector plate extends obliquely toward the bottom, and the first deflector plate is located above the aperture; and fixing a second deflector plate to the second side wall, wherein the second deflector plate is located above the first deflector plate, and the second deflector plate extends obliquely toward the bottom.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: The disclosure is a separation method of bonded substrates. The bonded substrate is placed on a breathable plate of a debonding device to separate a wafer and a carrier substrate of the bonded substrate, and the wafer is placed on the breathable plate. A robot arm moves the wafer and the breathable plate to a cleaning device for cleaning, and then moves the wafer and the breathable plate to a relay device. Clamping units of the relay device clamp the breathable plate, and a bernoulli arm sucks the wafer and separates the wafer and the breathable plate, and then the robot arm transports the wafer and the breathable plate to a storage device respectively. The disclosure can automatically debond and clean the bonded substrate, and automatically move the wafer from the breathable plate, which can avoid the fragmentation of wafer.

Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.

Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

Abstract: The present disclosure is a substrate-processing chamber with a shielding mechanism with the same, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one driving shaft, at least one connecting seat and a shield, wherein the driving shaft extends from the storage chamber to the reaction chamber. The connecting seat is connected to the shield and the driving shaft, wherein the driving shaft drives the shield to move between the storage chamber and the reaction chamber, via the connecting seat.

Abstract: An atomic layer deposition equipment capable of reducing precursor deposition and an atomic layer deposition process method using the same are disclosed. The atomic layer deposition equipment includes a chamber, a stage, a precursor inlet, a shielding component, at least one gas inlet, and at least one pumping port, wherein the stage and the shielding component are disposed in a containing space of the chamber. The shielding component shields part of the inner surface of the chamber, and the gas inlet is fluidly connected to the containing space for introducing an inactive gas to the space between the chamber and the shielding component to prevent the precursor from entering. The pumping port pumps out the precursors that have not reacted with a substrate, thereby reducing the precursors remaining on the inner surface of the chamber, prolonging the cleaning cycle of the chamber and improving the product yield.

Abstract: The present disclosure provides a wafer-holding device, which mainly includes a wafer carrier, a first lid ring and a second lid ring, wherein the wafer carrier includes a carrying surface for carrying a wafer. The second lid ring is connected to the first-lid ring and placed on a radial-inner side of the first lid ring, wherein the first lid ring has a circumference larger than that of the second lid ring, for carrying the second lid ring. When the wafer carrier moves toward the first lid ring and the second lid ring, the second lid ring contacts the wafer on the wafer carrier, to fasten the wafer on the carrying surface of the wafer carrier, for performing a thin-film deposition to the wafer.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a heater, a support unit, a hollow component, a bottom pumping port, and a shower head component, wherein the support unit is disposed on the top surface of the heater for supporting a substrate. There is an upper exhaust path formed between the hollow component and the support unit for exhausting process fluid such as precursors, so that the flow field of the process fluid in the atomic layer deposition process can be adjusted stably to make a uniform deposition on the substrate.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a heater, a support unit, a hollow component, a bottom pumping port, and a shower head component, wherein the support unit is disposed on the top surface of the heater for supporting a substrate. There is an upper exhaust path formed between the hollow component and the support unit for exhausting process fluid such as precursors, so that the flow field of the process fluid in the atomic layer deposition process can be adjusted stably to make a uniform deposition on the substrate.

Abstract: An atomic layer deposition equipment capable of reducing precursor deposition and an atomic layer deposition process method using the same are disclosed. The atomic layer deposition equipment includes a chamber, a stage, a precursor inlet, a shielding component, at least one gas inlet, and at least one pumping port, wherein the stage and the shielding component are disposed in a containing space of the chamber. The shielding component shields part of the inner surface of the chamber, and the gas inlet is fluidly connected to the containing space for introducing an inactive gas to the space between the chamber and the shielding component to prevent the precursor from entering. The pumping port pumps out the precursors that have not reacted with a substrate, thereby reducing the precursors remaining on the inner surface of the chamber, prolonging the cleaning cycle of the chamber and improving the product yield.