Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.

Abstract: A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Abstract: The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

Abstract: The present disclosure is a substrate-processing chamber with a shielding mechanism with the same, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one driving shaft, at least one connecting seat and a shield, wherein the driving shaft extends from the storage chamber to the reaction chamber. The connecting seat is connected to the shield and the driving shaft, wherein the driving shaft drives the shield to move between the storage chamber and the reaction chamber, via the connecting seat.

Abstract: An atomic layer deposition equipment capable of reducing precursor deposition and an atomic layer deposition process method using the same are disclosed. The atomic layer deposition equipment includes a chamber, a stage, a precursor inlet, a shielding component, at least one gas inlet, and at least one pumping port, wherein the stage and the shielding component are disposed in a containing space of the chamber. The shielding component shields part of the inner surface of the chamber, and the gas inlet is fluidly connected to the containing space for introducing an inactive gas to the space between the chamber and the shielding component to prevent the precursor from entering. The pumping port pumps out the precursors that have not reacted with a substrate, thereby reducing the precursors remaining on the inner surface of the chamber, prolonging the cleaning cycle of the chamber and improving the product yield.

Abstract: The present disclosure provides a wafer-holding device, which mainly includes a wafer carrier, a first lid ring and a second lid ring, wherein the wafer carrier includes a carrying surface for carrying a wafer. The second lid ring is connected to the first-lid ring and placed on a radial-inner side of the first lid ring, wherein the first lid ring has a circumference larger than that of the second lid ring, for carrying the second lid ring. When the wafer carrier moves toward the first lid ring and the second lid ring, the second lid ring contacts the wafer on the wafer carrier, to fasten the wafer on the carrying surface of the wafer carrier, for performing a thin-film deposition to the wafer.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a heater, a support unit, a hollow component, a bottom pumping port, and a shower head component, wherein the support unit is disposed on the top surface of the heater for supporting a substrate. There is an upper exhaust path formed between the hollow component and the support unit for exhausting process fluid such as precursors, so that the flow field of the process fluid in the atomic layer deposition process can be adjusted stably to make a uniform deposition on the substrate.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a heater, a support unit, a hollow component, a bottom pumping port, and a shower head component, wherein the support unit is disposed on the top surface of the heater for supporting a substrate. There is an upper exhaust path formed between the hollow component and the support unit for exhausting process fluid such as precursors, so that the flow field of the process fluid in the atomic layer deposition process can be adjusted stably to make a uniform deposition on the substrate.

Abstract: An atomic layer deposition equipment capable of reducing precursor deposition and an atomic layer deposition process method using the same are disclosed. The atomic layer deposition equipment includes a chamber, a stage, a precursor inlet, a shielding component, at least one gas inlet, and at least one pumping port, wherein the stage and the shielding component are disposed in a containing space of the chamber. The shielding component shields part of the inner surface of the chamber, and the gas inlet is fluidly connected to the containing space for introducing an inactive gas to the space between the chamber and the shielding component to prevent the precursor from entering. The pumping port pumps out the precursors that have not reacted with a substrate, thereby reducing the precursors remaining on the inner surface of the chamber, prolonging the cleaning cycle of the chamber and improving the product yield.

Abstract: An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.