Abstract: A thermal sensor with non-ideal coefficient elimination is shown. The thermal sensor has a bandgap circuit, a dual-phase voltage-to-frequency converter, and a frequency meter. The bandgap circuit outputs a temperature-dependent voltage. The dual-phase voltage-to-frequency converter is coupled to the bandgap circuit in the normal phase to perform a voltage-to-frequency conversion based on the temperature-dependent voltage, and is disconnected from the bandgap circuit in the coefficient capturing phase to perform the voltage-to-frequency conversion based on the supply voltage. The frequency meter is coupled to the dual-phase voltage-to-frequency converter to calculate the temperature-dependent frequency corresponding to the normal phase of the dual-phase voltage-to-frequency converter. The frequency meter also calculates the temperature-independent frequency corresponding to the coefficient capturing phase of the dual-phase voltage-to-frequency converter.

Abstract: The present invention provides a thermal sensor integrated IC having a resistor and a converting circuit. The resistor is implemented by at least one metal line, wherein a resistance of the resistor is varied with a temperature of the resistor, the resistor has a first terminal and a second terminal, and one of the first terminal and the second terminal is arranged to provide a voltage signal corresponding to the resistance. The converting circuit is coupled to the resistor, and is configured to convert the voltage signal to an output signal for determining the temperature. In one embodiment, the at least one metal line is made by copper.

Abstract: A thermal sensor with non-ideal coefficient elimination is shown. The thermal sensor has a bandgap circuit, a dual-phase voltage-to-frequency converter, and a frequency meter. The bandgap circuit outputs a temperature-dependent voltage. The dual-phase voltage-to-frequency converter is coupled to the bandgap circuit in the normal phase to perform a voltage-to-frequency conversion based on the temperature-dependent voltage, and is disconnected from the bandgap circuit in the coefficient capturing phase to perform the voltage-to-frequency conversion based on the supply voltage. The frequency meter is coupled to the dual-phase voltage-to-frequency converter to calculate the temperature-dependent frequency corresponding to the normal phase of the dual-phase voltage-to-frequency converter. The frequency meter also calculates the temperature-independent frequency corresponding to the coefficient capturing phase of the dual-phase voltage-to-frequency converter.

Abstract: The present invention provides a thermal sensor integrated IC having a resistor and a converting circuit. The resistor is implemented by at least one metal line, wherein a resistance of the resistor is varied with a temperature of the resistor, the resistor has a first terminal and a second terminal, and one of the first terminal and the second terminal is arranged to provide a voltage signal corresponding to the resistance. The converting circuit is coupled to the resistor, and is configured to convert the voltage signal to an output signal for determining the temperature. In one embodiment, the at least one metal line is made by copper.

Abstract: A reference voltage generator has a bandgap reference circuit and a negative voltage generator. The bandgap reference circuit generates a reference voltage according to at least one base-emitter voltage of at least one bipolar junction transistor. The negative voltage generator generates a negative voltage, wherein at least one base terminal of the at least one bipolar junction transistor is arranged to receive a base voltage derived from the negative voltage.

Abstract: A reference voltage generator has a bandgap reference circuit and a negative voltage generator. The bandgap reference circuit generates a reference voltage according to at least one base-emitter voltage of at least one bipolar junction transistor. The negative voltage generator generates a negative voltage, wherein at least one base terminal of the at least one bipolar junction transistor is arranged to receive a base voltage derived from the negative voltage.

Abstract: Bandgap reference circuits capable operating in low voltage environments. In the bandgap reference circuit, a current generation circuit generates an output current obtained by combining a first current, a second current and a third current. The first current is converted from a first voltage and a first forward voltage of a first constant voltage generation element. The second current and the third current are both converted from a voltage difference between the first forward voltage and a second forward voltage of the second constant voltage generation element. A current-to-voltage generator converts the output current to an output voltage.