Abstract: The present invention discloses a method for preparing a bifacial PERC solar cell. The present invention has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Abstract: The present invention discloses a method for preparing a bifacial PERC solar cell. The present invention has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Abstract: The present invention discloses a tubular PECVD device for bifacial PERC solar cell. The present invention bifacial PERC solar cell has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Abstract: A bifacial punched PERC solar cell comprises a rear silver busbar (1), a rear aluminum finger (2), a rear passivation layer (3), a P-type silicon (4), an N-type emitter (5), a front passivation layer (6), a front silver finger (7), and a front silver busbar (8), a laser grooving region (9) is formed in the rear passivation layer by laser grooving; the rear aluminum finger line is connected to the P-type silicon via the laser grooving region, the bifacial PERC solar cell is provided with a light transmitting region (10) penetrating front and rear surfaces of the cell. A method of preparing a bifacial punched PERC solar cell and a module and a system employing the solar cell are also provided. The solar cell can be employed to increase back reflection for sunlight and significantly improve photoelectric conversion efficiency at the rear side of the cell.

Abstract: A monofacial tube-type PERC solar cell includes a rear silver busbar (1), an all-aluminum rear electric field (2), a rear composite film (3), P-type silicon (5), an N-type emitter (6), a front passivation film (7), and a front silver electrode (8). The rear composite film (3) includes one or more of an aluminum oxide film, a silicon dioxide film, a silicon oxynitride film, and a silicon nitride film, and is deposited on a rear surface of a silicon wafer by a tubular PECVD device. The tubular PECVD device includes four gas lines of silane, ammonia, trimethyl aluminum, and nitrous oxide. Such monofacial tube-type PERC solar cell has advantages of high photoelectric conversion efficiency, high appearance quality and high electroluminescence yield, and solves the problems of scratching and undesirable coating due to the process.

Abstract: A coating device for a tube-type PERC solar cell includes a wafer loading area, a furnace body, a gas cabinet, a vacuum system, a heating system, a control system and a graphite boat, wherein the gas cabinet is provided with a first gas line for feeding silane, a second gas line for feeding ammonia, a third gas line for feeding trimethylaluminum, a fourth gas line for feeding nitrous oxide, and a fifth gas line for feeding methane. The graphite boat is employed for loading and unloading a silicon wafer. Pre-processing is performed to the graphite boat before use or after several coating, wherein the pre-processing includes: baking the graphite boat and coating at least one layer of silicon carbide film on a surface of the baked graphite boat. The present application also discloses a coating method for a tube-type PERC solar cell.

Abstract: The present invention discloses a bifacial tube-type PERC solar cell, which comprises a rear silver major grid line, a rear aluminum grid line, a rear surface composite film, P-type silicon, an N-type emitter, a front surface silicon nitride film, and a front silver electrode. The present invention also discloses a method and a device for preparing a bifacial tube-type PERC solar cell. The present invention absorbs sunlight on both surfaces, has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Abstract: A method of manufacturing, programming and reading a non-volatile memory is provided. First, a to-be-coded memory having a plurality of to-be-coded cells arranged in a array is provided. Next, an implanting resist layer is formed on the to-be-coded memory. Then, a mask is disposed on the to-be-coded memory, wherein the number of the partial to-be-coded cells under the openings of the mask is less than the number of remaining to-be-coded cells. Afterwards, a patterned implanting resist layer is formed according to the mask. Next, the exposed to-be-coded cells are ion-implanted to define a plurality of first cells and second cells, wherein each first cell and each second cell record a second bit state and a first bit state respectively. Then, the to-be-coded memory is inversely defined, such that the first cells and the second cells record the first bit state and the second bit state respectively.

Abstract: To prevent a furnace in a semiconductor process from temperature and gas excursion, a paddle and spike thermal couples arranged on the sidewall of the tube and adjacent to the heater, respectively, are connected to a temperature controller to regulate the heater, and a mass controller adjusts the gas flow injected to the tube. In the method, the spike thermal couple, peddle thermal couple and zero point of the mass flow controller are checked to maintain within a first and second temperature ranges and a first gas flow speed range, respectively, and after wafers are loaded and temperature is ramped up, the peddle thermal couple and mass flow controller are checked again to maintain within a third temperature range and second gas flow speed range.