Abstract: A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate region surrounding the channel region. The gate region includes a gate electrode. A gate electrode length of the gate electrode is less than about 10 nm. A method of forming a semiconductor device is provided.

Abstract: According to a first aspect of the present invention, a static random access memory cell according to the present invention includes two stages. The first stage has a first P-Channel MOS transistor with its source connected to a high-voltage supply rail, and its drain connected to the drain of a first N-Channel MOS transistor. The source of the first N-Channel MOS transistor is connected to the drain of a second N-Channel MOS transistor. The source of the second N-Channel MOS transistor is connected to a V.sub.SS power supply rail. The second stage has a second P-Channel MOS transistor with its source connected to the high-voltage supply rail V.sub.HS, and its drain connected to the drain of a third N-Channel MOS transistor. The source of the third N-Channel MOS transistor is connected to the drain of a fourth N-Channel MOS transistor. The source of the fourth N-Channel MOS transistor is connected to V.sub.SS.