Patents by Inventor Ta-Shan Tseng
Ta-Shan Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8062536Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: GrantFiled: March 22, 2010Date of Patent: November 22, 2011Assignee: United Microelectronics Corp.Inventors: Chih-Chien Liu, Ta-Shan Tseng, Wen-Bin Shieh, Juan-Yuan Wu, Water Lur, Shih-Wei Sun
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Publication number: 20100173490Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: ApplicationFiled: March 22, 2010Publication date: July 8, 2010Inventors: Chih-Chien Liu, Ta-Shan Tseng, Wen-Bin Shieh, Juan-Yuan Wu, Water Lur, Shih-Wei Sun
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Patent number: 7718079Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: GrantFiled: November 20, 2001Date of Patent: May 18, 2010Assignee: United Microelectronics CorporationInventors: Chih-Chien Liu, Ta-Shan Tseng, Wen Bin Shieh, Juan-Yuan Wu, Water Lur, Shih-Wei Sun
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Patent number: 7514014Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: GrantFiled: April 11, 2000Date of Patent: April 7, 2009Assignee: United Microelectronics CorporationInventors: Chih-Chien Liu, Ta-Shan Tseng, W. B. Shieh, J. Y. Wu, Water Lur, Shih-Wei Sun
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Patent number: 7271101Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: GrantFiled: December 22, 2005Date of Patent: September 18, 2007Assignee: United Microelectronics CorporationInventors: Chih-Chien Liu, Ta-Shan Tseng, Wen-Bin Shieh, Juan-Yuan Wu, Water Lur, Shih-Wei Sun
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Patent number: 7078346Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: GrantFiled: July 29, 2004Date of Patent: July 18, 2006Assignee: United Microelectronics CorporationInventors: Chih-Chien Liu, Ta-Shan Tseng, Wen-Bin Shieh, Juan-Yuan Wu, Water Lur, Shih-Wei Sun
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Publication number: 20060099824Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: ApplicationFiled: December 22, 2005Publication date: May 11, 2006Inventors: Chih-Chien Liu, Ta-Shan Tseng, W.B. Shieh, J.Y. Wu, Water Lur, Shih-Wei Sun
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Publication number: 20050003671Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: ApplicationFiled: July 29, 2004Publication date: January 6, 2005Inventors: Chih-Chien Liu, Ta-Shan Tseng, W.B. Shieh, J.Y. Wu, Water Lur, Shih-Wei Sun
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Publication number: 20020030033Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: ApplicationFiled: November 20, 2001Publication date: March 14, 2002Inventors: Chih-Chien Liu, Ta-Shan Tseng, W.B. Shieh, J.Y. Wu, Water Lur, Shih-Wei Sun
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Patent number: 6117345Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.Type: GrantFiled: October 28, 1997Date of Patent: September 12, 2000Assignee: United Microelectronics Corp.Inventors: Chih-Chien Liu, Ta-Shan Tseng, Wen-Bin Shieh, Juan-Yuan Wu, Water Lur, Shih-Wei Sun