Patents by Inventor Ta-wei SUNG

Ta-wei SUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure including inter-layer dielectric
    Patent number: 10748809
    Abstract: A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-wei Sung, Ming-Hui Li, Ming-Ying Tsai
  • SEMICONDUCTOR STRUCTURE INCLUDING INTER-LAYER DIELECTRIC
    Publication number: 20190164810
    Abstract: A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
    Type: Application
    Filed: January 7, 2019
    Publication date: May 30, 2019
    Inventors: Ta-wei SUNG, Ming-Hui LI, Ming-Ying TSAI
  • Semiconductor structure and fabrication method therefor
    Patent number: 10177026
    Abstract: A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: January 8, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-wei Sung, Ming-Hui Li, Ming-Ying Tsai
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREFOR
    Publication number: 20180151413
    Abstract: A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms.
    Type: Application
    Filed: July 17, 2017
    Publication date: May 31, 2018
    Inventors: Ta-wei SUNG, Ming-Hui LI, Ming-Ying TSAI