Patents by Inventor Tabito TANAKA
Tabito TANAKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230133161Abstract: Surface acoustic wave (SAW) structures with transverse mode suppression are disclosed. In one aspect, the SAW structure provides digits or fingers with broad interior terminal end shapes. By providing such shapes spurious modes above the resonance frequency of the SAW are suppressed thereby providing desired out of band rejection that helps satisfy design criteria such as keeping a higher Q value, a higher K2 value and better Temperature Coefficient of Frequency (TCF).Type: ApplicationFiled: October 29, 2021Publication date: May 4, 2023Inventors: Tsuyoshi Yokoyama, Tabito Tanaka, Jun Sung Chun
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Patent number: 10476474Abstract: An acoustic wave resonator includes: comb-shaped electrodes located on a piezoelectric substrate, each including electrode fingers exciting an acoustic wave and a bus bar electrode connecting to the electrode fingers, the comb-shaped electrodes forming an overlap region where the electrode fingers of one of the comb-shaped electrodes overlap the electrode fingers of the other, wherein each of the electrode fingers overlapping in the comb-shaped electrodes includes: a first region that is located in the overlap region, where a velocity of the acoustic wave is a first velocity, and of which a position in a first direction in which the electrode fingers extend changes with respect to a second direction intersecting the first direction; and second regions that are located in the overlap region, where a velocity of the acoustic wave is a second velocity different from the first velocity, and that sandwich the first region in the first direction.Type: GrantFiled: November 2, 2016Date of Patent: November 12, 2019Assignee: TAIYO YUDEN CO., LTD.Inventor: Tabito Tanaka
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Patent number: 10461718Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.Type: GrantFiled: January 26, 2017Date of Patent: October 29, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Hidetaro Nakazawa, Masafumi Iwaki, Tabito Tanaka, Takashi Matsuda
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Patent number: 10361678Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.Type: GrantFiled: December 13, 2016Date of Patent: July 23, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Masafumi Iwaki, Yoshio Satoh, Tabito Tanaka, Hidetaro Nakazawa, Takashi Matsuda, Jun Tsutsumi
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Patent number: 10355668Abstract: An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ?i, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ?0, a Poisson's ratio of Cu is represented by P0 and a pitch is represented by ?, a total value of “(hi/?)×(?i/?0)×(Pi/P0)” for each metal film with respect to the one or more metal films is more than 0.08.Type: GrantFiled: December 15, 2015Date of Patent: July 16, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Masafumi Iwaki, Yoshio Sato, Tabito Tanaka, Hidetaro Nakazawa, Takashi Matsuda, Jun Tsutsumi
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Publication number: 20170264262Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.Type: ApplicationFiled: January 26, 2017Publication date: September 14, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Hidetaro NAKAZAWA, Masafumi IWAKI, Tabito TANAKA, Takashi MATSUDA
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Publication number: 20170201229Abstract: An acoustic wave resonator includes: comb-shaped electrodes located on a piezoelectric substrate, each including electrode fingers exciting an acoustic wave and a bus bar electrode connecting to the electrode fingers, the comb-shaped electrodes forming an overlap region where the electrode fingers of one of the comb-shaped electrodes overlap the electrode fingers of the other, wherein each of the electrode fingers overlapping in the comb-shaped electrodes includes: a first region that is located in the overlap region, where a velocity of the acoustic wave is a first velocity, and of which a position in a first direction in which the electrode fingers extend changes with respect to a second direction intersecting the first direction; and second regions that are located in the overlap region, where a velocity of the acoustic wave is a second velocity different from the first velocity, and that sandwich the first region in the first direction.Type: ApplicationFiled: November 2, 2016Publication date: July 13, 2017Applicant: TAIYO YUDEN CO., LTD.Inventor: Tabito TANAKA
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Publication number: 20170170808Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.Type: ApplicationFiled: December 13, 2016Publication date: June 15, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Masafumi IWAKI, Yoshio SATOH, Tabito TANAKA, Hidetaro NAKAZAWA, Takashi MATSUDA, Jun TSUTSUMI
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Patent number: 9641152Abstract: An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.Type: GrantFiled: August 12, 2015Date of Patent: May 2, 2017Assignee: TAIYO YUDEN CO., LTD.Inventors: Kentaro Nakamura, Jun Tsutsumi, Yoshio Sato, Tabito Tanaka, Takashi Matsuda
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Publication number: 20160211829Abstract: An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ?i, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ?0, a Poisson's ratio of Cu is represented by P0 and a pitch is represented by ?, a total value of “(hi/?)×(?i/?0)×(Pi/P0)” for each metal film with respect to the one or more metal films is more than 0.08.Type: ApplicationFiled: December 15, 2015Publication date: July 21, 2016Applicant: TAIYO YUDEN CO., LTD.Inventors: Masafumi IWAKI, Yoshio SATO, Tabito TANAKA, Hidetaro NAKAZAWA, Takashi MATSUDA, Jun TSUTSUMI
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Publication number: 20160182010Abstract: An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.Type: ApplicationFiled: August 12, 2015Publication date: June 23, 2016Applicant: TAIYO YUDEN CO., LTD.Inventors: Kentaro NAKAMURA, Jun TSUTSUMI, Yoshio SATO, Tabito TANAKA, Takashi MATSUDA