Patents by Inventor Tadaaki Hosokawa

Tadaaki Hosokawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8963192
    Abstract: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: February 24, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadaaki Hosokawa, Shuji Itonaga
  • Publication number: 20130032838
    Abstract: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.
    Type: Application
    Filed: February 27, 2012
    Publication date: February 7, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tadaaki Hosokawa, Shuji Itonaga
  • Patent number: 7968430
    Abstract: A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.
    Type: Grant
    Filed: September 5, 2007
    Date of Patent: June 28, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Matsuyama, Tadaaki Hosokawa, Seiji Iida, Akira Tanaka
  • Publication number: 20080246051
    Abstract: A light emitting apparatus includes: a light emitting element including a laminated body, an electrode provided on the laminated body, and a pad electrode provided on the electrode, the laminated body including a semiconductor light emitting layer; a mounting member having a metal bonding layer; and an alloy solder containing gold for bonding the pad electrode to the metal bonding layer. The pad electrode has at least a first gold layer provided on the electrode and being thicker than the electrode and a first metal barrier layer provided on the first gold layer, and the melting point of the alloy solder is lower than the melting point of alloys with elements constituting the first metal barrier layer and the alloy solder.
    Type: Application
    Filed: April 4, 2008
    Publication date: October 9, 2008
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaaki Hosokawa, Osamu Horiuchi, Takayuki Matsuyama, Makoto Okada
  • Publication number: 20080061303
    Abstract: A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.
    Type: Application
    Filed: September 5, 2007
    Publication date: March 13, 2008
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki MATSUYAMA, Tadaaki Hosokawa, Seiji Iida, Akira Tanaka
  • Patent number: D503385
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: March 29, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tadaaki Hosokawa