Abstract: A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

Abstract: A laminate including a metallic base material, a first nickel-containing plating film layer formed on the metallic base material, a gold plating film layer formed on the first nickel-containing plating film layer, a second nickel-containing plating film layer formed on the gold plating film layer, and a nickel fluoride film layer formed on the second nickel-containing plating film layer. Also disclosed is a method for producing the laminate as well as a constituent member of a semiconductor production device including the laminate.

Abstract: A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

Abstract: A method for producing a substrate with black film is provided, comprising forming a dull plating film on a surface of a substrate, forming an electroless plating film containing a sulfur or nitrogen compound on the surface of the plating film, and forming a black film on the surface of the electroless plating film. This substrate with black film is used for devices which generate heat due to sliding or friction or generate/accumulate heat due to a chemical reaction, such as semiconductor device, vacuum device, rotating device and heat exchanger, and the black film has excellent heat radiating properties with an emissivity of 0.8 or more. Also, this substrate with black film has high corrosion resistance against halogen-type corrosive gases and exhibits excellent release gas properties and corrosion resistance in vacuum devices.