Patents by Inventor Tadaaki Nagao
Tadaaki Nagao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230333023Abstract: Provided is to perform an identification of a temperature and/or a material of a target object to be measured in a non-contact and simple manner. A relationship between a wavelength and an emissivity of thermal radiation such as infrared rays radiated from an object is determined by the material of the object. In the present invention, the identification is performed by using this. In other words, the object above can be achieved by comparing thermal radiation intensities at a plurality of wavelengths from the given object with a database in the present invention. The database is stored by measuring the thermal radiation intensities at the plurality of wavelengths and temperatures for a plurality of materials in advance. An external light source is not required, and the target to be measured itself is used as a thermal radiation light source in this measurement.Type: ApplicationFiled: September 13, 2021Publication date: October 19, 2023Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Tadaaki NAGAO, Duc Thien NGO, Ryo TAMURA, Tung Anh DOAN
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Patent number: 11454858Abstract: An optical deflector includes: a light transmitting portion through which a light passes; and a pair of electrodes arranged to oppose to each other with the light transmitting portion interposed therebetween. The light transmitting portion is a transparent ion conductor made of a single crystal or polycrystal. The pair of electrodes apply a predetermined voltage to the light transmitting portion to move ions inside the transparent ion conductor so as to change a traveling direction of the light passing through the light transmitting portion.Type: GrantFiled: March 5, 2020Date of Patent: September 27, 2022Assignees: DENSO CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Yosuke Suzuki, Tadaaki Nagao, Akio Watanabe
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Publication number: 20220271211Abstract: A photothermal converter using a wavelength selective perfect absorber made of a low-loss metal material or dielectric and a heat detection sensor are combined to develop a sensor that efficiently converts light of a specific wavelength into heat and further electrically detects the heat. Here, since the wavelength selective perfect absorber of the present invention has a periodic structure, it has high directivity, and can also be used as a small motion sensor or a watching sensor using detection of thermal radiation. In addition, it can also be used as a high-precision small position sensor by being combined with a laser light source matching the resonance wavelength of the sensor.Type: ApplicationFiled: July 30, 2020Publication date: August 25, 2022Inventors: Tadaaki NAGAO, Duy Thang DAO
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Patent number: 11142687Abstract: The present invention has for its object to provide a composition in which a photoluminescent carbon nanoparticle having no dependency of an emission wavelength on an excitation wavelength and being enhanced in terms of quantum efficiency is dispersed, a process of producing the same, and an application of the same. The composition of the invention has a photoluminescent carbon nanoparticle dispersed in a water-soluble solvent. The photoluminescent carbon nanoparticle contains a carbon atom, an oxygen atom, a nitrogen atom, and a hydrogen atom if required. As shown in FIG. 6, the photoluminescent carbon nanoparticle has an intensity of a C—N bond and/or C—O bond-derived peak (285.98 eV) larger than that of a C—C bond and/or C—H bond-derived peak (284.95 eV) in terms of X-ray photoelectron spectroscopic spectra, and a Raman spectrum having a peak based on a G-band and a D-band.Type: GrantFiled: March 1, 2018Date of Patent: October 12, 2021Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Tadaaki Nagao, Karuna Kar Nanda
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Publication number: 20210243858Abstract: Provided is a radiation light source that enables adjustment of infrared radiation to a significantly narrow band. A plasmonic reflector layer consisting of a plasmonic material, a resonator layer consisting of an insulator, and a partially reflecting layer are alternately laminated in this order to form a multi-layered radiation light source, wherein the partially reflecting layer are selected from any one of a free interface, an ultrathin-film metallic layer, and a distributed reflector layer having a structure in which layers having different refractive indexes are alternately laminated. When a material with high-temperature resistance such as SiC is used in the outermost layer of the distributed reflector layer, the multi-layered radiation light source can operate at high temperatures of 550° C. and higher.Type: ApplicationFiled: May 24, 2019Publication date: August 5, 2021Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Tadaaki NAGAO, Tung Anh DOAN, Duy Thang DAO, Satoshi ISHII
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Patent number: 10996172Abstract: Surface-functionalized nano structures, arrays of the nanostructures, and method for using the arrays in surfaced-enhanced spectroscopy and dielectric sensing applications, such as surface-enhanced infrared absorption spectroscopy, are provided. The nanostructures are functionalized with specific binding moieties that are bound to the nanostructures via phosphonic acid linkers.Type: GrantFiled: April 27, 2018Date of Patent: May 4, 2021Assignees: NATIONAL INSTITUTE OF MATERIAL SCIENCE, Northwestern UniversityInventors: Robert P. H. Chang, Shiqiang Li, Peijun Guo, Kai Chen, Keiko Okano, Tadaaki Nagao
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Publication number: 20200292910Abstract: An optical deflector includes; a light transmitting portion through which a light passes; and a pair of electrodes arranged to oppose to each other with the light transmitting portion interposed therebetween. The light transmitting portion is a transparent ion conductor made of a single crystal or polycrystal. The pair of electrodes apply a predetermined voltage to the light transmitting portion to move ions inside the transparent ion conductor so as to change a traveling direction of the light passing through the light transmitting portion.Type: ApplicationFiled: March 5, 2020Publication date: September 17, 2020Inventors: Yosuke SUZUKI, Tadaaki NAGAO, Akio WATANABE
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Publication number: 20200141871Abstract: Surface-functionalized nano structures, arrays of the nanostructures, and method for using the arrays in surfaced-enhanced spectroscopy and dielectric sensing applications, such as surface-enhanced infrared absorption spectroscopy, are provided. The nanostructures are functionalized with specific binding moieties that are bound to the nanostructures via phosphonic acid linkers.Type: ApplicationFiled: April 27, 2018Publication date: May 7, 2020Inventors: Robert P. H. Chang, Shiqiang Li, Peijun Guo, Kai Chen, Keiko Okano, Tadaaki Nagao
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Publication number: 20200048548Abstract: The present invention has for its object to provide a composition in which a photoluminescent carbon nanoparticle having no dependency of an emission wavelength on an excitation wavelength and being enhanced in terms of quantum efficiency is dispersed, a process of producing the same, and an application of the same. The composition of the invention has a photoluminescent carbon nanoparticle dispersed in a water-soluble solvent. The photoluminescent carbon nanoparticle contains a carbon atom, an oxygen atom, a nitrogen atom, and a hydrogen atom if required. As shown in FIG. 6, the photoluminescent carbon nanoparticle has an intensity of a C—N bond and/or C—O bond-derived peak (285.98 eV) larger than that of a C—C bond and/or C—H bond-derived peak (284.95 eV) in terms of X-ray photoelectron spectroscopic spectra, and a Raman spectrum having a peak based on a G-band and a D-band.Type: ApplicationFiled: March 1, 2018Publication date: February 13, 2020Inventors: Tadaaki NAGAO, Karuna Kar NANDA
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Patent number: 10290802Abstract: The forming voltage of a variable resistance device used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film is sandwiched between a lower electrode and an upper electrode, an island-shaped/particulate region of amorphous aluminum oxide or aluminum oxycarbide is formed on the metal oxide film. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the variable resistance device, is formed from the beginning under the island-shaped or particulate aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.Type: GrantFiled: January 13, 2016Date of Patent: May 14, 2019Assignee: National Insitute for Materials ScienceInventors: Toshihide Nabatame, Tadaaki Nagao
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Electromagnetic wave absorbing/radiating material, method of manufacturing same, and infrared source
Patent number: 10067270Abstract: The present invention relates to an electromagnetic wave absorbing/radiating material which includes: a conductor; and a plurality of conductor discs disposed in an array above the surface of the conductor or a perforated conductor layer with a plurality of holes defined in an array above the surface of the conductor.Type: GrantFiled: August 10, 2015Date of Patent: September 4, 2018Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Tadaaki Nagao, Thang Duy Dao, Takahiro Yokoyama, Satoshi Ishii -
Publication number: 20170346006Abstract: The forming voltage of a resistance change element used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film 12 is sandwiched between a lower electrode 11 and an upper electrode 14, an island/particle-like region of amorphous aluminum oxide or aluminum oxycarbide 13 is formed on the metal oxide film 12. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the resistance change element, is formed from the beginning under the island- or particle-like aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.Type: ApplicationFiled: January 13, 2016Publication date: November 30, 2017Applicant: National Institute for Materials ScienceInventors: Toshihide NABATAME, Tadaaki NAGAO
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Electromagnetic Wave Absorbing/Radiating Material, Method of Manufacturing Same, and Infrared Source
Publication number: 20170219746Abstract: The present invention relates to an electromagnetic wave absorbing/radiating material which includes: a conductor; and a plurality of conductor discs disposed in an array above the surface of the conductor or a perforated conductor layer with a plurality of holes defined in an array above the surface of the conductor.Type: ApplicationFiled: August 10, 2015Publication date: August 3, 2017Inventors: Tadaaki Nagao, Thang Duy Dao, Takahiro Yokoyama, Satoski Ishii -
Patent number: 8193499Abstract: The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.Type: GrantFiled: September 5, 2008Date of Patent: June 5, 2012Assignee: National Institute for Materials ScienceInventors: Tadaaki Nagao, Dominik Enders, Tomonobu Nakayama, Masakazu Aono
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Publication number: 20100239821Abstract: The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.Type: ApplicationFiled: September 5, 2008Publication date: September 23, 2010Inventors: Tadaaki Nagao, Dominik Enders, Tomonobu Nakayama, Masakazu Aono
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Patent number: 6946674Abstract: A low-dimensional plasmon-light emitter for converting an inputted electric energy luminescence with an arbitrary energy over a broad range. The emitter has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric, or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric.Type: GrantFiled: March 11, 2002Date of Patent: September 20, 2005Assignee: Japan Science and Technology CorporationInventor: Tadaaki Nagao
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Publication number: 20040079938Abstract: A low-dimensional plasmon-light emitter, which can convert an inputted electric energy to luminescent with an arbitrary energy over a broad range from a far-infrared region to an ultraviolet region, has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure, which has a periodicity corresponding to a real space periodicity D1(=2&pgr;/q1), wherein a wavenumber q1 gives a specified luminescent energy (h/2&pgr;1)&ohgr;1 in a wavenumber-energy curve of low-dimensional plasmon, is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric.Type: ApplicationFiled: September 11, 2003Publication date: April 29, 2004Inventor: Tadaaki Nagao