Abstract: Display image quality degradation caused by a burn-in phenomenon is prevented in a self-emission type display apparatus. A degradation characteristic acquisition circuit acquires degradation characteristics of a pixel region, and a boundary portion detection circuit detects a boundary of the degradation characteristics. A correction amount operation circuit arithmetically operates a correction amount based on the boundary, and a video signal correction circuit corrects a video signal. The correction amount is determined based on the boundary of the degradation characteristics such that emission luminance is gently varies in a periphery of a boundary of a pixel due to the burn-in phenomenon, and whereby the burn-in phenomenon becomes inconspicuous.

Abstract: A temperature-history sensor includes a resonance circuit composed of at least a capacitor and a coil. The temperature-history sensor has a display for indicating a predetermined set temperature of the temperature-history sensor. The capacitor has at least a thermofusion material between electrodes of the capacitor, and the melting point of the thermofusion material is in the region of the set temperature.

Abstract: A temperature-history sensor includes a resonance circuit composed of at least a capacitor and a coil. The temperature-history sensor has a display for indicating a predetermined set temperature of the temperature-history sensor. The capacitor has at least a thermofusion material between electrodes of the capacitor, and the melting point of the thermofusion material is in the region of the set temperature.

Abstract: A display apparatus including a pixel circuit including a light emitting element arranged in a site where a scanning line crosses a signal line; a holding capacitor; a first switch which opens and closes connection between one terminal of the light emitting element and the signal line in accordance with a signal applied to the scanning line; a second switch which opens and closes connection between one terminal of the holding capacitor and the signal line in accordance with a signal applied to the scanning line to control current to be supplied to the light emitting element, wherein in the pixel circuit selected by a signal of the scanning line, the first switch is closed to apply a voltage to one terminal of the light emitting element from a first voltage supply connected to the signal line and the second switch is closed to apply a voltage to one terminal of the holding capacitor from a second voltage supply connected to the signal line.

Abstract: An active matrix organic electroluminescence(EL) display comprises plural selection and data lines mutually crossed, and a pixel circuit connected to the selection and data lines and having switching devices, a storage capacitor and an organic EL device. In a part of a period that the pixel circuit connected to the selection line is being selected, an applied first data signal is held as a voltage at the storage capacitor of the selected pixel circuit. After the selection signal applying, a first current according to the held voltage is supplied to the organic EL device, and this emits light at luminance according to the first current. In another part of the period, a second current according to an applied second data signal is supplied to the organic EL device of the selected pixel circuit, and this emits light at luminance according to the second current.

Abstract: The present invention provides a light emitting element circuit that includes a current mirror circuit which includes two thin film transistors, two current input terminals and two output terminals, a capacitor for holding voltage corresponding to an electric current to be input from one of the two current input terminals, and a light emitting element connected to the current mirror circuit, and that supplies an electric current in accordance with the voltage held in the capacitor to the light emitting element through the current mirror circuit, wherein the two output terminals of the current mirror circuit are connected to the light emitting element, and the two current input terminals of the current mirror circuit are connected with each other through a switch in a time period other than a time period during which an electric current is input from the one of the two current input terminals.

Abstract: A temperature-history sensor includes a resonance circuit composed of at least a capacitor and a coil. The temperature-history sensor has a display for indicating a predetermined set temperature of the temperature-history sensor. The capacitor has at least a thermofusion material between electrodes of the capacitor, and the melting point of the thermofusion material is in the region of the set temperature.

Abstract: In a resonance tag provided with a resonance circuit composed of a capacitive element and an inductive element, the capacitive element is characterized by having a condition under which the capacitance of the capacitive element is reversibly changed by a voltage applied to the resonance circuit and anther condition under which the capacitance of the capacitive element is irreversibly changed by another voltage applied to the resonance circuit.

Abstract: Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to the switching element, all of which are arranged on a substrate having an insulating surface, wherein the switching element includes an organic semiconductor, and the storage element contains a dielectric material and stores information by selecting at least two states including a high impedance state and a low impedance state.

Abstract: One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode thereof is connected with a bit line. The other terminal of the memory element is connected with a base line. A fixed resistor is connected between a connecting point between the other main electrode of the TFT and the bit line and an input terminal of the bit line. In information writing for changing the memory element whose initial state is a low impedance state to a high impedance state, voltages having polarities reverse relative to a reference voltage are applied to the input terminal of the bit line and an input terminal of the base line, respectively, so that a high voltage necessary to change the state is applied between both the terminals of the memory element.

Abstract: A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an accommodating part and a receiving layer. The first and second gate electrodes are opposed to each other with the sensing portion, the semiconductor layer, and the gate-insulating layer therebetween. One surface of the semiconductor layer is in contact with a surface of the sensing portion, and another surface of the semiconductor layer is in contact with the gate-insulating layer. A surface of the gate-insulating layer is in contact with the second gate electrode. The first gate electrode and the receiving layer are opposed to each other with the accommodating part therebetween. The source and drain electrodes are in contact with the semiconductor layer.

Abstract: One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode thereof is connected with a bit line. The other terminal of the memory element is connected with a base line. A fixed resistor is connected between a connecting point between the other main electrode of the TFT and the bit line and an input terminal of the bit line. In information writing for changing the memory element whose initial state is a low impedance state to a high impedance state, voltages having polarities reverse relative to a reference voltage are applied to the input terminal of the bit line and an input terminal of the base line, respectively, so that a high voltage necessary to change the state is applied between both the terminals of the memory element.

Abstract: A pair of electrodes are provided to sandwich an organic semiconductor layer. A lead-out electrode is provided to each of the organic semiconductor layer and the two electrodes constituting the pair of electrodes. Consequently, there is provided an organic semiconductor device having a simple configuration.

Abstract: Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to the switching element, all of which are arranged on a substrate having an insulating surface, wherein the switching element includes an organic semiconductor, and the storage element contains a dielectric material and stores information by selecting at least two states including a high impedance state and a low impedance state.

Abstract: A method of reading information from and writing information onto an RF tag that resonates by electromagnetic inductance, the RF tag including at least two sets of electromagnetic resonance circuits having mutually different resonance frequencies, the at least two sets of electromagnetic resonance circuits having at least one of a resistor and a capacitor, a fuse or antifuse element capable of selecting a low impedance state and a high impedance state on the basis of an electrical signal, and a coil antenna, is provided.

Abstract: The present invention provides an RF tag which does not have an integrated circuit such as a silicon chip, can retain a plurality of information, can rewrite or add the information, and is inexpensive. The RF tag includes an RF resonance circuit which has at least two capacitors connected in series or parallel and at least one coil antenna formed on a substrate, wherein at least one of the capacitors is an anti-fuse which irreversibly short-circuits when a voltage higher than a threshold voltage is applied to the anti-fuse, and the surface of an electrode constituting the capacitor has a mean roughness of 1 ?m or less.

Abstract: A field-effect transistor (T2SW) in a semiconductor integrated circuit is driven by periodically applying positive and negative voltage pulses, with reference to the voltage applied to the source and drain electrodes, to the gate electrode. Stable operation of integrated circuit is realized by a simple method, even if the integrated circuit includes a field-effect transistor exhibiting a readily fluctuating threshold voltage.

Abstract: An unauthorized access prevention method is provided for an integrated circuit including one or plural resistor elements capable of selecting between a high impedance state and a low impedance state irreversibly in an interface portion within the integrated circuit or a peripheral circuit portion. When a signal inconsistent with verification information and standard that are preset in the integrated circuit is received at least once, the impedance state of the resistor element is changed from an initial state to stop a part or all of accesses to the integrated circuit irreversibly. The unauthorized access prevention method is thus implemented by a simple structure manufactured with ease and at low cost.

Abstract: The organic semiconductor device of the present invention includes an organic semiconductor material and a conductive electrode contacting with the organic semiconductor material, wherein a quasi Fermi level of the organic semiconductor material and a Fermi level of the conductive electrode are optimized by using adjustment means, and a junction barrier between the organic semiconductor material and the conductive electrode is controlled.

Abstract: A pair of electrodes are provided to sandwich an organic semiconductor layer. A lead-out electrode is provided to each of the organic semiconductor layer and the two electrodes constituting the pair of electrodes. Consequently, there is provided an organic semiconductor device having a simple configuration.