Abstract: It is provided a circuit for generating finger print code data comprising: plural pairs of first transistors, each of the first transistors having a source formed in the substrate, a drain formed in the substrate, a channel formed in the substrate between the source and the drain, a gate insulating layer formed on the channel, a gate electrode formed over the gate insulating layer, and an insulating sidewall formed at a side surface of the gate electrode; plural pairs of cross coupled second transistors, each of the plural pairs of cross coupled second transistors having drains and commonly connected sources, corresponding to each of the plural pairs of first transistors; and plural pairs of third transistors, each of the plural pairs of third transistors corresponding to each of the plural pairs of cross coupled second transistors.

Abstract: It is provided a circuit for generating finger print code data comprising: plural pairs of first transistors, each of the first transistors having a source formed in the substrate, a drain formed in the substrate, a channel formed in the substrate between the source and the drain, a gate insulating layer formed on the channel, a gate electrode formed over the gate insulating layer, and an insulating sidewall formed at a side surface of the gate electrode; plural pairs of cross coupled second transistors, each of the plural pairs of cross coupled second transistors having drains and commonly connected sources, corresponding to each of the plural pairs of first transistors; and plural pairs of third transistors, each of the plural pairs of third transistors corresponding to each of the plural pairs of cross coupled second transistors.

Abstract: A nonvolatile memory cell includes a first-conductivity-type silicon substrate, a metal layer formed in a surface of the first-conductivity-type silicon substrate, a second-conductivity-type diffusion layer formed in the surface of the first-conductivity-type silicon substrate and spaced apart from the metal layer, an insulating film disposed on the surface of the first-conductivity-type silicon substrate between the metal layer and the second-conductivity-type diffusion layer, a gate electrode disposed on the insulating film between the metal layer and the second-conductivity-type diffusion layer, and a sidewall disposed at a same side of the gate electrode as the metal layer and situated between the gate electrode and the metal layer, the sidewall being made of insulating material.

Abstract: A nonvolatile memory cell includes a first-conductivity-type silicon substrate, a metal layer formed in a surface of the first-conductivity-type silicon substrate, a second-conductivity-type diffusion layer formed in the surface of the first-conductivity-type silicon substrate and spaced apart from the metal layer, an insulating film disposed on the surface of the first-conductivity-type silicon substrate between the metal layer and the second-conductivity-type diffusion layer, a gate electrode disposed on the insulating film between the metal layer and the second-conductivity-type diffusion layer, and a sidewall disposed at a same side of the gate electrode as the metal layer and situated between the gate electrode and the metal layer, the sidewall being made of insulating material.

Abstract: A nonvolatile memory cell includes a first-conductivity-type silicon substrate, a metal layer formed in a surface of the first-conductivity-type silicon substrate, a second-conductivity-type diffusion layer formed in the surface of the first-conductivity-type silicon substrate and spaced apart from the metal layer, an insulating film disposed on the surface of the first-conductivity-type silicon substrate between the metal layer and the second-conductivity-type diffusion layer, a gate electrode disposed on the insulating film between the metal layer and the second-conductivity-type diffusion layer, and a sidewall disposed at a same side of the gate electrode as the metal layer and situated between the gate electrode and the metal layer, the sidewall being made of insulating material.

Abstract: A nonvolatile memory cell includes a first-conductivity-type silicon substrate, a metal layer formed in a surface of the first-conductivity-type silicon substrate, a second-conductivity-type diffusion layer formed in the surface of the first-conductivity-type silicon substrate and spaced apart from the metal layer, an insulating film disposed on the surface of the first-conductivity-type silicon substrate between the metal layer and the second-conductivity-type diffusion layer, a gate electrode disposed on the insulating film between the metal layer and the second-conductivity-type diffusion layer, and a sidewall disposed at a same side of the gate electrode as the metal layer and situated between the gate electrode and the metal layer, the sidewall being made of insulating material.

Abstract: A nonvolatile memory device includes a word line, four or more bit lines, three or more MIS transistors having gate nodes thereof connected to the word line, the N-th (N: positive integer) one of the MIS transistors having two source/drain nodes thereof connected to the N-th and N+1-th ones of the bit lines, respectively, a sense circuit having two nodes and configured to amplify a difference between potentials of the two nodes, and a switch circuit configured to electrically couple the N-th and N+2-th ones of the bit lines to the two nodes of the sense circuit, respectively, and to electrically couple the N+1-th one of the bit lines to a fixed potential, for any numerical number N selected to detect single-bit data stored in the N-th and N+1-th ones of the MIS transistors.

Abstract: A nonvolatile memory device includes a word line, four or more bit lines, three or more MIS transistors having gate nodes thereof connected to the word line, the N-th (N: positive integer) one of the MIS transistors having two source/drain nodes thereof connected to the N-th and N+1-th ones of the bit lines, respectively, a sense circuit having two nodes and configured to amplify a difference between potentials of the two nodes, and a switch circuit configured to electrically couple the N-th and N+2-th ones of the bit lines to the two nodes of the sense circuit, respectively, and to electrically couple the N+1-th one of the bit lines to a fixed potential, for any numerical number N selected to detect single-bit data stored in the N-th and N+1-th ones of the MIS transistors.

Abstract: A silicon oxide removal apparatus for removing silicon oxide contained in an inert gas discharged from a silicon single crystal manufacturing apparatus, including at least: a contact means for bringing the inert gas discharged from the silicon single crystal manufacturing apparatus into contact with a strongly alkaline solution; and a neutralizing means for neutralizing an alkaline material contained in the inert gas brought into contact with the strongly alkaline solution. As a result, there is provided a silicon oxide removal apparatus and a facility for recycling an inert gas for use in a silicon single crystal manufacturing apparatus that can more effectively remove the silicon oxide contained in the inert gas discharged from the silicon single crystal manufacturing apparatus at low cost and enable recycle of the inert gas in which the silicon oxide has been effectively removed.

Abstract: A nonvolatile semiconductor memory device includes an MIS transistor having nodes, a control circuit configured to apply a first set of potentials to the nodes to cause an irreversible change in transistor characteristics, to apply a second set of potentials to the nodes to cause a first current to flow through the MIS transistor in a first direction, and to apply the second set of potentials to the nodes to cause a second current to flow through the MIS transistor in a second direction opposite the first direction, and a sense circuit configured to produce a signal responsive to a difference between the first current and the second current.

Abstract: A nonvolatile semiconductor memory device includes an MIS transistor having nodes, a control circuit configured to apply a first set of potentials to the nodes to cause an irreversible change in transistor characteristics, to apply a second set of potentials to the nodes to cause a first current to flow through the MIS transistor in a first direction, and to apply the second set of potentials to the nodes to cause a second current to flow through the MIS transistor in a second direction opposite the first direction, and a sense circuit configured to produce a signal responsive to a difference between the first current and the second current.

Abstract: A silicon oxide removal apparatus for removing silicon oxide contained in an inert gas discharged from a silicon single crystal manufacturing apparatus, including at least: a contact means for bringing the inert gas discharged from the silicon single crystal manufacturing apparatus into contact with a strongly alkaline solution; and a neutralizing means for neutralizing an alkaline material contained in the inert gas brought into contact with the strongly alkaline solution. As a result, there is provided a silicon oxide removal apparatus and a facility for recycling an inert gas for use in a silicon single crystal manufacturing apparatus that can more effectively remove the silicon oxide contained in the inert gas discharged from the silicon single crystal manufacturing apparatus at low cost and enable recycle of the inert gas in which the silicon oxide has been effectively removed.

Abstract: A memory circuit includes a latch having a first node and a second node to store data such that a logic level of the first node is an inverse of a logic level of the second node, a MIS transistor having a gate node, a first source/drain node, and a second source/drain node, the first source/drain node coupled to the first node of the latch, and a control circuit configured to control the gate node and second source/drain node of the MIS transistor in a first operation such that a lingering change is created in transistor characteristics of the MIS transistor in response to the data stored in the latch, wherein the MIS transistor includes a highly-doped substrate layer, a lightly-doped substrate layer disposed on the highly-doped substrate layer, diffusion regions formed in the lightly-doped substrate layer, a gate electrode, sidewalls, and an insulating film.

Abstract: A memory circuit includes a latch having a first node and a second node, a MIS transistor having a gate node, a first source/drain node coupled to the first node of the latch, and a second source/drain node, and a control circuit configured to control the gate node and second source/drain node to make a lingering change in a threshold voltage of the MIS transistor in a first operation and to cause the latch in a second operation to store data responsive to whether a lingering change in the threshold voltage is present, wherein the MIS transistor includes diffusion regions, a gate electrode, and sidewalls, wherein a metallurgical junction of each of the diffusion regions is positioned under the gate electrode, and a lateral boundary of a depletion layer in the diffusion region serving as a drain is positioned under a corresponding one of the sidewalls in the first operation.

Abstract: A memory circuit includes a latch having a first node and a second node, a MIS transistor having a gate node, a first source/drain node coupled to the first node of the latch, and a second source/drain node, and a control circuit configured to control the gate node and second source/drain node to make a lingering change in a threshold voltage of the MIS transistor in a first operation and to cause the latch in a second operation to store data responsive to whether a lingering change in the threshold voltage is present, wherein the MIS transistor includes diffusion regions, a gate electrode, and sidewalls, wherein a metallurgical junction of each of the diffusion regions is positioned under the gate electrode, and a lateral boundary of a depletion layer in the diffusion region serving as a drain is positioned under a corresponding one of the sidewalls in the first operation.

Abstract: A memory circuit includes a latch having a first node and a second node to store data such that a logic level of the first node is an inverse of a logic level of the second node, a MIS transistor having a gate node, a first source/drain node, and a second source/drain node, the first source/drain node coupled to the first node of the latch, and a control circuit configured to control the gate node and second source/drain node of the MIS transistor to make an upward lingering change in a threshold voltage of the MIS transistor in a first operation in response to data stored in the latch and to make a downward lingering change in the threshold voltage in a second operation in response to data stored in the latch.

Abstract: A memory circuit includes a latch having a first node and a second node to store data such that a logic level of the first node is an inverse of a logic level of the second node, a MIS transistor having a gate node, a first source/drain node, and a second source/drain node, the first source/drain node coupled to the first node of the latch, and a control circuit configured to control the gate node and second source/drain node of the MIS transistor in a first operation such that a lingering change is created in transistor characteristics of the MIS transistor in response to the data stored in the latch, wherein the MIS transistor includes a highly-doped substrate layer, a lightly-doped substrate layer disposed on the highly-doped substrate layer, diffusion regions formed in the lightly-doped substrate layer, a gate electrode, sidewalls, and an insulating film.

Abstract: A memory circuit includes a latch having a first node and a second node to store data such that a logic level of the first node is an inverse of a logic level of the second node, a MIS transistor having a gate node, a first source/drain node, and a second source/drain node, the first source/drain node coupled to the first node of the latch, and a control circuit configured to control the gate node and second source/drain node of the MIS transistor to make an upward lingering change in a threshold voltage of the MIS transistor in a first operation in response to data stored in the latch and to make a downward lingering change in the threshold voltage in a second operation in response to data stored in the latch.

Abstract: A nonvolatile memory circuit includes a flip-flop to degrade an internal circuit irreversibly based on a voltage applied to a first or second bit line so as to latch data in a nonvolatile manner, a first switch coupled between a first output terminal of the flip-flop and the first bit line, a second switch coupled between the first output terminal of the flip-flop and the first bit line, a third switch coupled between a second output terminal of the flip-flop outputting an inverse of an output of the first output terminal and the second bit line, and a fourth switch coupled between the second output terminal of the flip-flop and the second bit line.

Abstract: A memory circuit includes a latch having a first node and a second node, a plate line, a word selecting line, a first MIS transistor having source/drain nodes thereof coupled to the first node and the plate line, respectively, and a gate node thereof coupled to the word selecting line, a second MIS transistor having source/drain nodes thereof coupled to the second node and the plate line, respectively, and a gate node thereof coupled to the word selecting line, and a driver configured to set the plate line to a first potential causing a current to flow in a first direction through the first MIS transistor in a first operation mode and to a second potential causing a current to flow in a second direction through the first MIS transistor in a second operation mode, the first operation mode causing a lingering change in characteristics of the first MIS transistor.