Abstract: The present invention provides fiber-reinforced ceramics containing at least one member of fibers and whiskers as distributed in a sintering ceramic matrix, which comprises the ceramic matrix being composed mainly of SiC, Si.sub.3 N.sub.4 and Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, where 0<z.ltoreq.4, the fibers and the whiskers being composed of at least one of SiC, Si.sub.3 N.sub.4 and Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, where 0<z.ltoreq.4, and a coating film of C, B or BN being provided on the surfaces of the fibers and the whiskers. The fiber-reinforced ceramics have a high fracture toughness, K.sub.1c, and a high bending strength, particularly K.sub.1c of at least 10 MN/m.sup.3/2 and a bending strength of at least 50 kg/mm.sup.2.

Abstract: The present invention provides fiber-reinforced ceramics containing at least one member of fibers and whiskers as distributed in a sintering ceramic matrix, which comprises the ceramic matrix being composed mainly of SiC, Si.sub.3 N.sub.4 and Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, where 0<z.ltoreq.4, the fibers and the whiskers being composed of at least one of SiC, Si.sub.3 N.sub.4 and Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, where 0<z.ltoreq.4, and a coating film of C, B or BN being provided on the surfaces of the fibers and the whiskers. The fiber-reinforced ceramics have a high fracture toughness, K.sub.lc, and a high bending strength, particularly k.sub.lc of at least 10 MN/m.sup.3/2 and a bending strength of at least 50 kg/mm.sup.2.

Abstract: An installation structure of integrated circuit devices, in which two or more types of integrated circuit devices of different base materials are installed onto the same installation substrate. Since the installation structure has a construction according to different characteristics such as a thermal conductivity, heat generation amount, thermal expansion coefficient and the like of the integrated circuit devices made of different materials, the reliability of each device and its connection and the reduction of the costs required for the cooling method can be presented.

Abstract: The ceramic sinter is composed of a metal oxide such as ZrO.sub.2 and 10-90 vol. % of metal fluoride which is selected from the group having not less than 2.5 electronegativity difference between fluoride and the metal element.The ceramic sinter has a thermal expansion coefficient of 15-20.times.10.sup.-6 /.degree.C. and is suitable for bonding with general use metals such as stainless steel to form a composite body of the ceramic sinter and the metal without causing a substantial thermal stress at the juncture thereof.

Abstract: An exothermic resistor for use in a hot wire air flow meter, having a wire (2) in the form of a coil made of a metal, a pair of lead wires (3) connected to connections (21) formed at the opposite ends of the coil, and a support member (4) which integrally supports the connection as well as the coil located between the connections. An example of the support member is in the form of a tubular cylinder closed at its both ends. The support member is formed from glass only or formed of a layer of a glass-ceramic-composite material. The hot wire air flow meter is designed to be easely mass-produced and to have improved transient response characteristics with respect to abrupt changes in the air flow rate.

Abstract: A method for generating X-rays in an X-ray tube, comprises the steps of: rotating an X-ray target of a rotating anode, the X-ray target having a metal coated layer thereon; applying electron beams emitted from a cathode onto the metal coated layer of the X-ray target; and offsetting thermal deformation of the X-ray target due to the application of the electron beams by deformation of the X-ray target due to centrifugal force, thereby maintaining a position of the X-ray target in a direction of the application of the electron beams, at a room temperature of the X-ray target, thus generating the X-rays.

Abstract: There is obtained, by mixing oxide raw material powders, compacting the mixture and sintering the compact, a silicon nitride sintered body mainly composed of silicon nitride and having a grain boundary phase wherein crystals represented by Yb.sub.2 Si.sub.2 O.sub.7 and a Zr.sub.3 Yb.sub.4 O.sub.12 are present in the grain boundary phase and molar ratio ZrO.sub.2 /Yb.sub.2 O.sub.3 in terms of ZrO.sub.2 and Yb.sub.2 O.sub.3 is 2/98 to 75/25 and the total amount of ZrO.sub.2 and Yb.sub.2 O.sub.3 is 1-40% by weight of the sintered body.

Abstract: The present invention relates to a sintered product containing silicon carbide as a main component which comprises a phase(a) containing at least one metal selected from among Al, Sc, Y and rare earth elements and oxygen, a particle phase(b) comprising at least one metal carbide selected from among carbides of Ti, Zr, Hf, Va, Nb, Ta, W and the like, a composite particle phase(c) comprising said phase(a) and said phase(b) surrounding the phase(a) and silicon carbide matrix(d) in which the above phase(a), (b) and (c) are dispersed.The silicon carbide sintered product of the present invention exhibits a remarkably high strength and a remarkably high toughness which have not been attained up to this time, so that it can form various heat-resistant structural materials having a high reliability.

Abstract: A high toughness silicon nitride sintered body comprises silicon nitride as a main component and at least one member selected from the group consisting of silicides and carbides in the form of plate particles, of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. In the sintered body, the longer diameter d.sub.1 of principal plane of plate of the plate particles and the shorter diameter d.sub.2 of the same plane has a relation of d.sub.1 /d.sub.2 <10, and the thickness of plate of the plate particles is 1/5 or below of d.sub.2.

Abstract: A silicon carbide electrical insulator material of low dielectric constant comprising an electrically insulating sintered body containing silicon carbide as a main constituent and an element providing electrical insulating properties in sintered state, wherein the sintered body comprises an element selected from V family in the periodic table and the carrier concentration within the crystal grain of silicon carbide is 5.times.10.sup.17 cm.sup.-3 or less.

Abstract: The gas detection offered by the present invention is characterized by the detection of CO as distinct from H.sub.2. The optimum structure of the device therefor has an electrolytic cell wherein the electrode surfaces of a working electrode, a counter electrode and a reference electrode are kept in contact with electrolyte and wherein the open sides at both ends of the vessel containing the electrolyte are sealed by the working electrode, the counter electrode and the reference electrode; means for connecting between the working electrode and the counter electrode and means for applying a predetermined a voltage between the working electrode and the reference electrode, wherein sensitivity of the working electrode to carbon monoxide and hydrogen gas is smaller than that of the reference electrode.

Abstract: A nonlinear resistor comprising a sintered body containing zinc oxide as a major component and at least bismuth oxide and boron oxide and electrodes formed thereon, said sintered body having a higher .gamma.-form bismuth oxide phase concentration in upper and/or lower surface layers of the sintered body than in the inner portion of the sintered body, has stabilized properties against long-time voltage application. When the sintered body is further modified by making the .gamma.-form bismuth oxide phase concentration in the periphery portions of the upper and/or lower surface layers lower than that in the inner portions of the upper and/or lower surface layers, the resulting nonlinear resistor shows a higher long-duration current impulse withstand capability.

Abstract: A sintered product composed chiefly of zinc oxide. A paste composed of a glass powder, an organic binder and tin oxide having a catalytic activity for promoting the combustion of organic binder, is coated on the side surfaces of the sintered product. The paste coated on the sintered product is baked to remove by burning the organic binder in the paste. Then, electrodes are attached to the main surfaces of the sintered product to complete a non-linear resistor.

Abstract: Disclosed is a voltage non-linear resistor comprising a sintered body composed mainly of zinc oxide, said sintered body including confronting main faces and a face side face connecting the main faces to each other, which has the side face coated with a coating glass layer containing barium oxide. The coating glass layer comprises 40 to 85% by weight of lead oxide, 3 to 25% by weight of boron oxide. 1.5 to 25% by weight of silicon oxide and 0.2 to 15% by weight of barium oxide. The barium oxide acts as a catalyst and exerts a function of completely burning an organic binder at a temperature lower than about 400.degree. C. where the reaction between the organic binder and zinc oxide is not substantially advanced.

Abstract: Disclosed is a non-linear resistor of a sintered ZnO ceramics, which has a glass coating having a baking temperature higher than 850.degree. C. but a temperature lower than the sintering temperature of the sintered ZnO ceramics, and has a composition:(a) 30 to 75% by weight of SiO.sub.2,(b) 0.3 to 15% by weight of at least B.sub.2 O.sub.3 and PbO,(c) 2 to 30% by weight of Al.sub.2 O.sub.3,(d) less than 30% by weight of an alkaline earth metal oxide,(e) less than 40% by weight of ZnO,(f) less than 25% by weight of TiO.sub.2, and(g) less than 5% by weight of an alkali metal oxide.The glass coating baked at a range of 850.degree. C. to 1300.degree. C. provides non-linear resistors having a large non-linear coefficient and a high impulse current resistance as well as a good resistance to an acid and water.

Abstract: Oxygen sensor ceramic of solid electrolyte of zirconia-yttria system comprises aggregates of cubic zirconia grains having an average grain size of 2-10 .mu.m and monoclinic zirconia grains having an average grain size of 0.2-1 .mu.m, the appregates of the cubic zirconia grains being in contact with one another, and the monoclinic zirconia grains being distributed as aggregates in clearances among the aggregates of the cubic zirconia grains, and has a high thermal shock resistance, a high mechanical strength and a resistivity equal to that of the ceramic consisting only of cubic zirconia grains. The oxygen sensor ceramic is prepared by mixing zirconia powder having a grain size of 0.1-0.5 .mu.m with 4-8% by mole of yttria powder having an average grain size of 0.5-5 .mu.m, on the basis of total mixture, and molding and firing the mixture at 1,400.degree.-1,550.degree. C.

Abstract: A photocoupler wherein a semiconductor photo-responsive element and a semiconductor light emitting element are arranged on an insulating substrate in such a mannner that they oppose each other with a P-N junction of the latter being perpendicular to a light receiving face of the former. At least one of the elements is connected with electric wiring on the insulating substrate by the use of a brazing material at three or more points which lie on an identical plane of the insulating substrate but do not lie on one straight line.

Abstract: A photo-coupled semiconductor device comprising a light-emitting semiconductor element, a light-receiving semiconductor element, and an insulation base supporting these two semiconductor elements. The insulation base has a pair of parallel surfaces and provides an optical path extending between the parallel surfaces for photo-coupling the semiconductor elements. Each of the semiconductor elements has at least two rigid electrodes extending in parallel to the parallel surfaces of the insulation base, and the electrodes are electrically and mechanically connected at one of their parallel surfaces by solder to conductive interconnection layers exposed at predetermined positions of one of the parallel surfaces of the insulation base. The device can satisfy both the desired increase in the efficiency of photo-coupling and the desired improvement in the massproductivity.

Abstract: A photo-coupler semiconductor device includes a semiconductor light emitter and a semiconductor light detector coupled optically with each other through an optical guide. A portion of the optical guide close to the semiconductor light detector is made of glass. The glass portion of the optical guide is brought into intimate contact with a glass layer which is formed on a light sensitive region of the semiconductor light detector. The intimate contact is made by melting the glass portion on the glass layer.

Abstract: A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.