Abstract: The resistive material contains copper and manganese, an oxide film of manganese being formed on a surface of the resistive material.

Abstract: A copper alloy material having a low volume resistivity, a low TCR and a small thermal electromotive force with respect to copper and a shunt resistor comprising a resistive body formed by the copper alloy material are provided. The copper-manganese-based copper alloy material includes 4.5-5.5 mass % of manganese, 0.1-0.3 mass % of iron, 0.1-0.5 mass % of tin, and a balance being copper. A volume resistivity is 15-25 ??·cm. An absolute value of TCR is 150×10?6/K or less. A thermal electromotive force with respect to copper is 1 ?V/K or less. A resistance value change is ?0.3% to 0% in a heat resistance test of 175° C. for 3000 hours.

Abstract: Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 ??·m.

Abstract: Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to ?36×10?6/K at 100° C. with reference to 25° C.

Abstract: Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

Abstract: The resistive material contains copper and manganese, an oxide film of manganese being formed on a surface of the resistive material.

Abstract: Provided is a resistor including a first electrode, a second electrode, and a resistive element disposed between the first and second electrodes. Each of the first and second electrodes includes a main electrode portion and a narrow electrode portion with a narrower width than that of the main electrode portion. The resistive element is disposed between the two narrow electrode portions.

Abstract: Provided is a method for producing a resistor, including a step of forming a through-hole in a sheet-like conductive material; a step of fitting a resistive element piece into the through-hole and thus forming joint portions where end surfaces of the resistive element piece are joined to respective side surfaces of the conductive material exposed by the through-hole; and stamping a region including the joint portions from the conductive material, thereby forming a resistor including a resistive element and a pair of electrodes.

Abstract: Provided is a resistor including a first electrode, a second electrode, and a resistive element disposed between the first and second electrodes. Each of the first and second electrodes includes a main electrode portion and a narrow electrode portion with a narrower width than that of the main electrode portion. The resistive element is disposed between the two narrow electrode portions.

Abstract: Provided is a method for producing a resistor, including a step of forming a through-hole in a sheet-like conductive material; a step of fitting a resistive element piece into the through-hole and thus forming joint portions where end surfaces of the resistive element piece are joined to respective side surfaces of the conductive material exposed by the through-hole; and stamping a region including the joint portions from the conductive material, thereby forming a resistor including a resistive element and a pair of electrodes.

Abstract: The present invention provides an intermediate film for laminated glass that can increase the heat-insulating properties of laminated glass. The intermediate film for laminated glass according to the present invention is an intermediate film for laminated glass having a one-layer structure or a laminated structure of two or more layers, an intermediate film 1 for laminated glass has a first layer 2 containing silicon dioxide particles 51 having hollow parts and shell parts and having a porosity of 40% or more and 80% or less, when the intermediate film 1 for laminated glass has a one-layer structure, the first layer further contains a thermoplastic resin, and when the intermediate film 1 for laminated glass has a laminated structure of two or more layers, the intermediate film 1 for laminated glass further has a second layer 3 which is arranged on a first surface 2a side of the first layer 2 and which contains a thermoplastic resin.

Abstract: Provided is a shunt resistor, which controls an influence of skin effect by high frequency current. The shunt resistor has a rod-shaped resistance body (11), and a pair of main electrode (12), of another material from the resistance body, wherein end faces of the resistance body and the main electrode are bonded. The resistance body (11) has a hole (11a) going through in direction where main electrodes are disposed, or a high resistance part (11b) going through at its axis portion that is highly resistive than outer part, and low resistance part (11c) that is formed in outer of the high resistance part. It is preferable that outer circumference of the resistance body is circle-shaped. Since, current doesn't flow fundamentally in the through hole or the high resistance part, fluctuation band in the current pathway can be reduced. Therefore, change of resistance value by skin effect by high-frequency current can be reduced.

Abstract: Provided is a voltage detection circuit, which can remove influence of error voltage caused by tiny amount of self-inductance existing in a shunt resistor, though in the resistor for large current usage, which is impossible to surface-mount on a voltage detection circuit board. The shunt resistor device comprises: a resistance body (11); a pair of main electrode (12) for flowing current to be monitored through the resistance body; a pair of detection terminal (13a) for detecting voltage caused in the resistance body; and a pair of wiring (23) each electrically connected to the detection terminal. And, a pair of voltage detection wiring consisting of the detection terminal (13a) and the wiring (23) is brought closer, at prescribed location, than distance between each of connection position of the pair of the detection terminal (13a) on the main electrode (12).

Abstract: Provided is a voltage detection circuit, which can remove influence of error voltage caused by tiny amount of self-inductance existing in a shunt resistor, though in the resistor for large current usage, which is impossible to surface-mount on a voltage detection circuit board. The shunt resistor device comprises: a resistance body (11); a pair of main electrode (12) for flowing current to be monitored through the resistance body; a pair of detection terminal (13a) for detecting voltage caused in the resistance body; and a pair of wiring (23) each electrically connected to the detection terminal. And, a pair of voltage detection wiring consisting of the detection terminal (13a) and the wiring (23) is brought closer, at prescribed location, than distance between each of connection position of the pair of the detection terminal (13a) on the main electrode (12).

Abstract: Provided is a shunt resistor, which controls an influence of skin effect by high frequency current. The shunt resistor has a rod-shaped resistance body (11), and a pair of main electrode (12), of another material from the resistance body, wherein end faces of the resistance body and the main electrode are bonded. The resistance body (11) has a hole (11a) going through in direction where main electrodes are disposed, or a high resistance part (11b) going through at its axis portion that is highly resistive than outer part, and low resistance part (11c) that is formed in outer of the high resistance part. It is preferable that outer circumference of the resistance body is circle-shaped. Since, current doesn't flow fundamentally in the through hole or the high resistance part, fluctuation band in the current pathway can be reduced. Therefore, change of resistance value by skin effect by high-frequency current can be reduced.

Abstract: The present invention provides an intermediate film for laminated glass that can increase the heat-insulating properties of laminated glass. The intermediate film for laminated glass according to the present invention is an intermediate film for laminated glass having a one-layer structure or a laminated structure of two or more layers, an intermediate film 1 for laminated glass has a first layer 2 containing silicon dioxide particles 51 having hollow parts and shell parts and having a porosity of 40% or more and 80% or less, when the intermediate film 1 for laminated glass has a one-layer structure, the first layer further contains a thermoplastic resin, and when the intermediate film 1 for laminated glass has a laminated structure of two or more layers, the intermediate film 1 for laminated glass further has a second layer 3 which is arranged on a first surface 2a side of the first layer 2 and which contains a thermoplastic resin.

Abstract: A dispersion of tin-doped indium oxide fine particles has tin-doped indium oxide fine particles, a plasticizer for an interlayer film, an organic solvent containing alcohols as a main component, and a dispersion stabilizer, wherein under measuring conditions of a concentration of tin-doped indium oxide fine particles of 0.7% by weight and an optical path length of a glass cell of 1 mm, a visible light transmittance is 80% or more, a solar radiation transmittance at a wavelength within a range from 300 nm to 2100 nm is ¾ or less of the visible light transmittance, a haze value is 1.0% or less, and a reflection yellow index is ?20 or more.

Abstract: Provided is a shunt resistor which has an excellent accuracy of current detection and a small temperature drift as well as a compact structure, and improves the operability. The shunt resistor is provided with a resistance body (11), a pair of main electrodes (12, 12) separated from the resistance body, and a pair of voltage detection electrodes (13, 13) separated from the main electrodes. The voltage detection electrodes (13) are provided and fixed between the resistance body (11) and the main electrodes (12). The voltage detection electrode (13) is provided with a detection terminal (13a) to be connected to a terminal of a voltage detection circuit. The resistance body (11) has a columnar shape. The voltage detection electrode (13) and main electrode (12) are fixed to both end faces of the resistance body (11) in the length direction, so that they are opposing each other. The components are bonded by diffusion boding, friction bonding, wax bonding, etc., after abutting the bonding surfaces with each other.

Abstract: A dispersion of tin-doped indium oxide fine particles has tin-doped indium oxide fine particles, a plasticizer for an interlayer film, an organic solvent containing alcohols as a main component, and a dispersion stabilizer, wherein under measuring conditions of a concentration of tin-doped indium oxide fine particles of 0.7% by weight and an optical path length of a glass cell of 1 mm, a visible light transmittance is 80% or more, a solar radiation transmittance at a wavelength within a range from 300 nm to 2100 nm is ¾ or less of the visible light transmittance, a haze value is 1.0% or less, and a reflection yellow index is ?20 or more.

Abstract: Provided is a shunt resistor which has an excellent accuracy of current detection and a small temperature drift as well as a compact structure, and improves the operability. The shunt resistor is provided with a resistance body (11), a pair of main electrodes (12, 12) separated from the resistance body, and a pair of voltage detection electrodes (13, 13) separated from the main electrodes. The voltage detection electrodes (13) are provided and fixed between the resistance body (11) and the main electrodes (12). The voltage detection electrode (13) is provided with a detection terminal (13a) to be connected to a terminal of a voltage detection circuit. The resistance body (11) has a columnar shape. The voltage detection electrode (13) and main electrode (12) are fixed to both end faces of the resistance body (11) in the length direction, so that they are opposing each other. The components are bonded by diffusion boding, friction bonding, wax bonding, etc., after abutting the bonding surfaces with each other.