Abstract: A method for manufacturing a semiconductor device includes selectively forming an insulating film on a region of a substrate serving as a scribe line; and forming a first semiconductor layer in a state where a cavity is provided on the insulating film. The cavity is buried in the first semiconductor layer.

Abstract: A method for manufacturing a semiconductor device includes forming an insulating film on a region of a substrate serving as a scribe line, forming a first semiconductor layer in a state where a cavity is provided on the insulating film, forming a second semiconductor layer on the first semiconductor layer, and dividing the substrate, the first semiconductor layer and the second semiconductor layer into a plurality of pieces by pressing the substrate at a position corresponding to the region serving as the scribe line on a surface of the substrate opposite to a surface on which the first semiconductor layer is formed.