Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 ?m.

Abstract: On a semiconductor substrate (1), there are laminated a light emitting layer forming portion (11) having at least an n-type layer (3) and a p-type layer (5) and a window layer (6), and a semiconductor laminating portion (12) is formed. On a surface thereof, a step free current blocking layer (10) is partially provided, so that a surface of the current blocking layer and the surface of the semiconductor laminating portion are flat. An upper electrode (8) is formed thereon in an area larger than that of the current blocking layer (10), and a lower electrode (9) is provided on a back surface of the semiconductor substrate (1). As a result, there can be provided a semiconductor light emitting device with structure such that there is no need to place an etching process in the middle of an epitaxial growth process, and the reliability of electrode can be improved without a step being produced at a portion at which the upper electrode is formed and a method thereof.

Abstract: On a semiconductor substrate (1), there are laminated a light emitting layer forming portion (11) having at least an n-type layer (3) and a p-type layer (5) and a window layer (6), and a semiconductor laminating portion (12) is formed. On a surface thereof, a step free current blocking layer (10) is partially provided, so that a surface of the current blocking layer and the surface of the semiconductor laminating portion are flat. An upper electrode (8) is formed thereon in an area larger than that of the current blocking layer (10), and a lower electrode (9) is provided on a back surface of the semiconductor substrate (1). As a result, there can be provided a semiconductor light emitting device with structure such that there is no need to place an etching process in the middle of an epitaxial growth process, and the reliability of electrode can be improved without a step being produced at a portion at which the upper electrode is formed and a method thereof.