Abstract: Provided is a sintered phosphor-composite for an LED, having high heat resistance, high thermal conductivity, high luminance, and high conversion efficacy. In addition, there are provided: a light-emitting apparatus which uses the sintered phosphor-composite; and an illumination apparatus and a vehicular headlamp which use the light-emitting apparatus. The sintered phosphor-composite includes a nitride phosphor and a fluoride inorganic binder. The sintered phosphor-composite preferably has an internal quantum efficiency of 60% or more when excited by blue light having a wavelength of 450 nm. Further, the sintered phosphor-composite preferably has a transmittance of 20% or more at a wavelength of 700 nm.

Abstract: Provided is a sintered phosphor-composite for an LED, having high heat resistance, high thermal conductivity, high luminance, and high conversion efficacy. In addition, there are provided: a light-emitting apparatus which uses the sintered phosphor-composite; and an illumination apparatus and a vehicular headlamp which use the light-emitting apparatus. The sintered phosphor-composite includes a nitride phosphor and a fluoride inorganic binder. The sintered phosphor-composite preferably has an internal quantum efficiency of 60% or more when excited by blue light having a wavelength of 450 nm. Further, the sintered phosphor-composite preferably has a transmittance of 20% or more at a wavelength of 700 nm.

Abstract: Provided is a light-emitting device having good binning characteristics with suppressed changes in color derived from shifts in excitation wavelength. The present invention achieves the above object by way of a light-emitting device that comprises a blue semiconductor light-emitting element, and a wavelength conversion member, wherein the wavelength conversion member comprises: a phosphor Y represented by formula (Y1) below and having a peak wavelength of 540 nm or more and 570 nm or less in an emission wavelength spectrum when excited at 450 nm, (Y,Ce,Tb,Lu)x(Ga,Sc,Al)yOz??(Y1) (x=3, 4.5?y?5.5, 10.8?z?13.4); and a phosphor G represented by formula (G1) below and having a peak wavelength of 520 nm or more and 540 nm or less in an emission wavelength spectrum when excited at 450 nm. (Y,Ce,Tb,Lu)x(Ga,Sc,Al)yOz??(G1) (x=3, 4.5?y?5.5, 10.8?z?13.

Abstract: A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having, on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.

Abstract: Provided is a light-emitting device having good binning characteristics with suppressed changes in color derived from shifts in excitation wavelength. The present invention achieves the above object by way of a light-emitting device that comprises a blue semiconductor light-emitting element, and a wavelength conversion member, wherein the wavelength conversion member comprises: a phosphor Y represented by formula (Y1) below and having a peak wavelength of 540 nm or more and 570 nm or less in an emission wavelength spectrum when excited at 450 nm, (Y,Ce,Tb,Lu)x(Ga,Sc,Al)yOz??(Y1) (x=3, 4.5?y?5.5, 10.85?z?13.4); and a phosphor G represented by formula (G1) below and having a peak wavelength of 520 nm or more and 540 nm or less in an emission wavelength spectrum when excited at 450 nm. (Y,Ce,Tb,Lu)x(Ga,Sc,Al)yOz??(G1) (x=3, 4.5?y?5.5, 10.8?z?13.

Abstract: An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a molded resin containing (A) a SiH-containing polyorganosiloxane and (B) a filler, wherein an amount of SiH existing in the molded resin, after a heat treatment thereof at 200° C. for 10 minutes, is 20 to 65 ?mol/g.

Abstract: A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having, on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.

Abstract: An object of the present invention is to provide a light emitting device exhibiting a superior emission efficiency which enables easy adjustment of an emission spectrum. The above object is achieved by a light emitting device comprising a semiconductor light emitting element and a phosphor layer, which has an area A and an area B of different emission spectra, and in which a plurality of phosphor portions are disposed on a plane such that identical phosphor portions do not adjoin one another, and the surface area occupied by specific phosphor portions in the phosphor layer is different in area A and area B.

Abstract: An object of the present invention is to provide a light emitting device which increases the emission efficiency of phosphor by reducing self-absorption of light by phosphor and by reducing absorption of fluorescent light by an encapsulating resin, and which increases the efficiency of light extraction from the phosphor layer by preventing light scattering caused by the phosphor. The above object was achieved by a light emitting device comprising a semiconductor light emitting element and a phosphor layer wherein the phosphor layer was made dense by setting specific values for particle distribution of phosphor contained in the phosphor layer and for the packing ratio of the phosphor contained in the phosphor layer.