Abstract: A light source is provided that includes an attachment member, a light source section, a power supply device, and a conductor. The attachment member includes a plate portion and a through hole. The light source section includes a first board, a light emitter, a first terminal, and a first hole. A power supply circuit of the power supply device includes a second board, a second hole, a holder, and a second terminal. The holder is arranged along one surface, facing away from the plate portion, of the second board. The second terminal is held by the holder. The first terminal, the first hole, the through hole, the second hole, and the second terminal overlap with each other in the thickness direction of the plate portion. The conductor is electrically connected to the first terminal and the second terminal through the first hole, the through hole, and the second hole.

Abstract: An illumination apparatus including: a power supply circuit which outputs a DC power obtained by rectifying an AC voltage and stepping up the rectified voltage; a light source unit having semiconductor light emitting elements turned on by the DC power; and a housing formed of a conductive material that is grounded through a ground path and on which the power supply circuit and the light source unit are mounted. When one of power feed lines is cut off, the light emitting elements are supplied with an AC power from an AC power source through the ground path and a stray capacitance formed between the light source unit and the housing, and a forward voltage of the light emitting elements has a light emission level hardly recognizable.

Abstract: An illumination apparatus including: a power supply circuit which outputs a DC power obtained by rectifying an AC voltage and stepping up the rectified voltage; a light source unit having semiconductor light emitting elements turned on by the DC power; and a housing formed of a conductive material that is grounded through a ground path and on which the power supply circuit and the light source unit are mounted. When one of power feed lines is cut off, the light emitting elements are supplied with an AC power from an AC power source through the ground path and a stray capacitance formed between the light source unit and the housing, and a forward voltage of the light emitting elements has a light emission level hardly recognizable.

Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Abstract: A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.

Abstract: A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.

Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

Abstract: A plasma display panel is provided. The plasma display panel includes a front panel including a front glass substrate, a plurality of pairs of discharge-maintaining electrodes disposed over the front glass substrate, and a first dielectric layer disposed in covering relation to the pairs of discharge-maintaining electrodes, and a rear panel disposed in confronting relation to the front panel with discharge spaces interposed therebetween, the front panel including a second dielectric layer disposed between the front glass substrate and the pairs of discharge-maintaining electrodes, the second dielectric layer including a cluster of fine particles of silica.

Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Abstract: A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed. The energy beam is scanned in parallel lines while keeping pitches of not larger than an irradiation radius of the energy beam to grow band-shaped crystal grains in a direction different from a scanning direction of the energy beam.

Abstract: A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Abstract: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

Abstract: A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Abstract: A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Abstract: A manufacturing method of a thin-film semiconductor apparatus and a thin-film semiconductor apparatus, in which a semiconductor thin film is spot-irradiated with an energy beam in the presence of n-type or p-type impurity to form a shallow diffusion layer in which the impurity is diffused only in a surface layer of the semiconductor thin film.

Abstract: A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.

Abstract: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

Abstract: A plasma display panel is provided. The plasma display panel includes a front panel including a front glass substrate, a plurality of pairs of discharge-maintaining electrodes disposed over the front glass substrate, and a first dielectric layer disposed in covering relation to the pairs of discharge-maintaining electrodes, and a rear panel disposed in confronting relation to the front panel with discharge spaces interposed therebetween, the front panel including a second dielectric layer disposed between the front glass substrate and the pairs of discharge-maintaining electrodes, the second dielectric layer including a cluster of fine particles of silica.

Abstract: A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed, wherein the semiconductor thin film is completely melted and the irradiation conditions of the energy beam are so set that the semiconductor thin film at a central position of the energy beam is finally crystallized in association with the scanning with the energy beam.