Abstract: An electricity storage device includes an internal element that has a first main surface, a second main surface, a first side surface, a second side surface, a first end surface, and a second end surface, and that further includes a first internal electrode drawn out to the first end surface, a second internal electrode drawn out to the second end surface, a separator layer disposed between the first and second internal electrodes, and an electrolytic solution. Moreover, a first end surface electrode is disposed on the first end surface; and a second end surface electrode is disposed on the second end surface. The first internal electrode, the second internal electrode, the separator layer, the first end surface electrode, and the second end surface electrode are integrally sintered to form a sintered body.

Abstract: An electricity storage device includes an internal element that has a first main surface, a second main surface, a first side surface, a second side surface, a first end surface, and a second end surface, and that further includes a first internal electrode drawn out to the first end surface, a second internal electrode drawn out to the second end surface, a separator layer disposed between the first and second internal electrodes, and an electrolytic solution. Moreover, a first end surface electrode is disposed on the first end surface; and a second end surface electrode is disposed on the second end surface. The first internal electrode, the second internal electrode, the separator layer, the first end surface electrode, and the second end surface electrode are integrally sintered to form a sintered body.

Abstract: A package electric double-layer capacitor having a first terminal that extends from a package at a first corner of a first cell, which is adjacent to a second cell, on one side in a second direction orthogonal to a first direction. A second terminal extends from the package at the first corner in the first direction and on a side of the first terminal opposite to the second cell. A third terminal extends from the package at a second corner of the second cell, which is adjacent to the first cell and the first corner. A fourth terminal extends from the package at the second corner in the first direction and on a side of the third terminal opposite to the first cell.

Abstract: A package electric double-layer capacitor having a first terminal that extends from a package at a first corner of a first cell, which is adjacent to a second cell, on one side in a second direction orthogonal to a first direction. A second terminal extends from the package at the first corner in the first direction and on a side of the first terminal opposite to the second cell. A third terminal extends from the package at a second corner of the second cell, which is adjacent to the first cell and the first corner. A fourth terminal extends from the package at the second corner in the first direction and on a side of the third terminal opposite to the first cell.

Abstract: A device main body includes positive electrode layers, negative electrode layers, and separator layers interposed between the positive electrode layers and the negative electrode layers. A package includes a housing-shaped package main body in which the element main body is accommodated, and a package peripheral edge portion which is flat, thinner in thickness than the package main body, and extends continuously from the package main body. A positive and a negative electrode terminals are extended to the outside from the package peripheral edge portion, and respectively include positive and negative electrode folded-back portions that are formed by the extended portions being folded back. The positive and the negative electrode folded-back portions have free ends and in contact with a surface of the package peripheral edge portion.

Abstract: A dielectric green sheet containing a dielectric ceramic powder, conductor green sheets containing a metal powder, and firing-assisting green sheets containing an inorganic oxide material powder are prepared, and the firing-assisting green sheet, the conductor green sheet, the dielectric green sheet, another conductor green sheet, and another firing-assisting green sheets are stacked in that order to prepare a laminate. The laminate is then fired. During firing, the bonding strength of the interfaces between the conductor green sheets and the firing-assisting green sheets is decreased and the oxygen partial pressure of the firing atmosphere is changed at least once so that the capacitor portion is separated from the firing-assisting green sheets. In this manner, a method for manufacturing thin film capacitor by which a high-reliability thin film capacitor can be produced at high efficiency and low cost without adversely affecting the characteristics of the thin film capacitor.

Abstract: A low-profile capacitor that can be bent and that has excellent interlayer adhesion strength. The capacitor includes a dielectric layer, a first capacitor electrode formed on a first main surface of the dielectric layer, a second capacitor electrode formed on a second main surface of the dielectric layer, and a lead electrode formed on the first main surface of the dielectric layer and electrically connected to the second capacitor electrode. The dielectric layer has a thickness of 5 ?m or less. The sum of the thicknesses of the first and second capacitor electrodes is 5 ?m or more and at least twice the thickness of the dielectric layer. The first and second capacitor electrodes and the lead electrode are formed of a malleable metal. The dielectric layer and the first and second capacitor electrodes are formed by being simultaneously sintered.

Abstract: A low-profile capacitor that can be bent and that has excellent interlayer adhesion strength. The capacitor includes a dielectric layer, a first capacitor electrode formed on a first main surface of the dielectric layer, a second capacitor electrode formed on a second main surface of the dielectric layer, and a lead electrode formed on the first main surface of the dielectric layer and electrically connected to the second capacitor electrode. The dielectric layer has a thickness of 5 ?m or less. The sum of the thicknesses of the first and second capacitor electrodes is 5 ?m or more and at least twice the thickness of the dielectric layer. The first and second capacitor electrodes and the lead electrode are formed of a malleable metal. The dielectric layer and the first and second capacitor electrodes are formed by being simultaneously sintered.

Abstract: A dielectric green sheet containing a dielectric ceramic powder, conductor green sheets containing a metal powder, and firing-assisting green sheets containing an inorganic oxide material powder are prepared, and the firing-assisting green sheet, the conductor green sheet, the dielectric green sheet, another conductor green sheet, and another firing-assisting green sheets are stacked in that order to prepare a laminate. The laminate is then fired. During firing, the bonding strength of the interfaces between the conductor green sheets and the firing-assisting green sheets is decreased and the oxygen partial pressure of the firing atmosphere is changed at least once so that the capacitor portion is separated from the firing-assisting green sheets. In this manner, a method for manufacturing thin film capacitor by which a high-reliability thin film capacitor can be produced at high efficiency and low cost without adversely affecting the characteristics of the thin film capacitor.

Abstract: An amorphous film is formed on an oxide single crystal substrate having a perovskite structure at a temperature lower than a crystallization temperature thereof, and then the amorphous film is heated at a temperature higher than the crystallization temperature to be crystallized into a ferroelectric thin film having a perovskite structure. In a amorphous film formation step, a two-layered amorphous film composed of at least two layers different from each other in composition can also formed. The combination of amorphous film formation step and crystallization step can be repeated at least twice.

Abstract: An oriented ferroelectric thin-film device includes a substrate, a conductive thin-film disposed on the substrate, and a ferroelectric thin-film disposed on the conductive thin-film, wherein the conductive thin-film comprises a polycrystalline conductive material, the ferroelectric thin-film comprises a Pb-containing perovskite oxide and includes a first ferroelectric sub-layer and a second ferroelectric sub-layer, the first ferroelectric sub-layer is disposed on the conductive thin-film and has a composition changing in the thickness direction, and the second ferroelectric sub-layer is disposed on the first ferroelectric sub-layer and has a constant composition. The ferroelectric thin-film is oriented in a uniaxial direction such that the c-axis is perpendicular to the substrate.

Abstract: An oriented ferroelectric thin-film device includes a substrate, a conductive thin-film disposed on the substrate, and a ferroelectric thin-film disposed on the conductive thin-film, wherein the conductive thin-film comprises a polycrystalline conductive material, the ferroelectric thin-film comprises a Pb-containing perovskite oxide and includes a first ferroelectric sub-layer and a second ferroelectric sub-layer, the first ferroelectric sub-layer is disposed on the conductive thin-film and has a composition changing in the thickness direction, and the second ferroelectric sub-layer is disposed on the first ferroelectric sub-layer and has a constant composition. The ferroelectric thin-film is oriented in a uniaxial direction such that the c-axis is perpendicular to the substrate.

Abstract: An amorphous film is formed on an oxide single crystal substrate having a perovskite structure at a temperature lower than a crystallization temperature thereof, and then the amorphous film is heated at a temperature higher than the crystallization temperature to be crystallized into a ferroelectric thin film having a perovskite structure. In a amorphous film formation step, a two-layered amorphous film composed of at least two layers different from each other in composition can also formed. The combination of amorphous film formation step and crystallization step can be repeated at least twice.

Abstract: A piezoelectric ceramic composition which contains a ceramic compound and manganese. The ceramic compound serves as a primary component and is represented by formula (Sr.sub.1-x M.sub.x)Bi.sub.2 Nb.sub.2 O.sub.9. In the formula, M represents a divalent metal element and x satisfies 0.ltoreq.x.ltoreq.0.3. Manganese is contained in an amount of 1.0 wt. % or less (0 being excluded) as MnCO.sub.3.

Abstract: Improved are the piezoelectric characteristics of conventional ceramics of (Ba.sub.1-x Sr.sub.x).sub.2 NaNb.sub.5 O.sub.15 where 0.ltoreq.x.ltoreq.1, and provided is a novel piezoelectric ceramic composition which does not contain lead and which can be practiced industrially as a material for piezoelectric ceramic devices such as piezoelectric ceramic filters, etc. The piezoelectric ceramic composition comprises, as the essential component, a ceramic component of the general formula, (1-y)(Ba.sub.1-x Sr.sub.x)Nb.sub.2 O.sub.6 --yNaNbO.sub.3 where 0.ltoreq.x.ltoreq.1 and 0.15.ltoreq.y<1/3. Preferably, the composition contains, as the side component, at least one oxides of Mn, Cr, W, Si, Mo, Ni, Co, Sn, Mg, Sb, Ti, Zr and Fe, in a total amount of not larger than about 5% by weight in terms of MnO.sub.2, Cr.sub.2 O.sub.3, WO.sub.3, SiO.sub.2, MoO.sub.3, NiO, Co.sub.2 O.sub.3, SnO.sub.2, MgO, Sb.sub.2 O.sub.3, TiO.sub.2, ZrO.sub.2 and Fe.sub.2 O.sub.3, respectively.

Abstract: Disclosed is a dielectric ceramic composition consisting essentially of a main component of (Sr.sub.1-x K.sub.X).sub.2 (Na.sub.1-x Bi.sub.x)Nb.sub.5 O.sub.15 with x being from about 0.1 to 0.35, and containing at least one of Cr, Mn, Fe, Co and Ni in an amount of from about 0.02 to 2.0% by weight relative to the main component and in terms of CrO.sub.2, MnO.sub.2, Fe.sub.2 O.sub.3, CoO and NiO. The composition contains neither Pb nor Ba, but has a specific inductive capacity comparable to that of BaTiO.sub.3 -type dielectric materials. The temperature-dependent variation in the specific inductive capacity of the composition is low. The composition is suitable for use in capacitors.