Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: Provided is a pattern forming method including, in the following order: (1) forming a resist film on a substrate; (2) exposing the resist film, and thereby forming a first line-and-space latent image; (3) subjecting the resist film in which the first line-and-space latent image has been formed, to a first heating treatment; (4) exposing the resist film that has been subjected to the first heating treatment, and thereby forming a second line-and-space latent image, so that the line direction in the second line-and-space latent image intersects the line direction in the first line-and-space latent image; (5) subjecting the resist film in which the second line-and-space latent image has been formed, to a second heating treatment; and (6) developing the resist film that has been subjected to the second heating treatment, using a developer containing an organic solvent.

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: Provided is a method of forming a pattern, including (a) forming, into a film, an actinic-ray- or radiation-sensitive resin composition comprising a resin that when acted on by an acid, increases its polarity and a compound that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to light, (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern, and (d) coating the pattern with a composition comprising a resin comprising any of repeating units of general formula (I) below, a crosslinker component and an alcohol solvent to thereby induce crosslinking with the resin as a constituent of the pattern and thus form a crosslinked layer, in which R1 represents any of an alkyl group, an alkoxy group, an alkylcarbonyloxy group and an alkoxycarbonyl group.

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: Provided is a pattern forming method including, in the following order: (1) forming a resist film on a substrate; (2) exposing the resist film, and thereby forming a first line-and-space latent image; (3) subjecting the resist film in which the first line-and-space latent image has been formed, to a first heating treatment; (4) exposing the resist film that has been subjected to the first heating treatment, and thereby forming a second line-and-space latent image, so that the line direction in the second line-and-space latent image intersects the line direction in the first line-and-space latent image; (5) subjecting the resist film in which the second line-and-space latent image has been formed, to a second heating treatment; and (6) developing the resist film that has been subjected to the second heating treatment, using a developer containing an organic solvent.

Abstract: Provided is a resist composition including a resin (A) containing any of repeating units (a) of general formulae (RI-a) and (RI-b) below, any of repeating units (b) of general formula (R2) below, any of repeating units (c) of general formula (R3) below and a repeating unit (d) being different from the repeating units (c) and containing a group that when acted on by an acid, is decomposed, a compound (B) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid, and any of compounds (C) of general formula (PDA-1) below.