Abstract: A multilayer wiring board having a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al—Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: A multilayer wiring board having a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

Abstract: A multilayer wiring board having a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

Abstract: When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al—Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.

Abstract: A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)?X2?(3*X¼) and (X½)?X3?(3*X¼).

Abstract: A multilayer wiring board comprises a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

Abstract: In a semiconductor-device manufacturing method, a metal bump is formed through a plurality of barrier metal layers on an opening which is selectively formed in an insulation layer covering a semiconductor substrate. The metal bump is formed on the plurality of barrier metal layers. A first etching process that selectively removes a lower metal layer among the plurality of barrier metal layers is performed by using an upper metal layer among the plurality of barrier metal layers as a mask. A reflow process that covers an end face of the lower metal layer with a metal that forms the metal bump is performed. After the lower metal layer end face is covered with the metal, a second etching process that removes a barrier metal residue on a surface of the insulation layer in a circumference of the metal bump is performed.

Abstract: A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)?X2?(3*X1/4) and (X1/2)?X3?(3*X1/4).

Abstract: A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)?X2?(3*X1/4) and (X1/2)?X3?(3*X1/4).

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: A plurality of chips divided from a semiconductor wafer having a plurality of semiconductor integrated circuits formed on a front surface of the wafer, are prepared, front surfaces of the chips being bonded to a first wafer sheet. The back and side surfaces of each chip bonded to the first wafer sheet are covered with a reinforcing thin film. Each of the plurality of chips is removed from the first wafer sheet. The flexural strength of a chip can be suppressed from being lowered by chipping and chip cracks.

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: A plurality of chips divided from a semiconductor wafer having a plurality of semiconductor integrated circuits formed on a front surface of the wafer, are prepared, front surfaces of the chips being bonded to a first wafer sheet. The back and side surfaces of each chip bonded to the first wafer sheet are covered with a reinforcing thin film. Each of the plurality of chips is removed from the first wafer sheet. The flexural strength of a chip can be suppressed from being lowered by chipping and chip cracks.

Abstract: A method and apparatus for adhering an adhesive-backed tape or sheet to a surface of a semiconductor wafer. The apparatus comprises a housing forming a vacuum working chamber containing a supporting table for the semiconductor wafer and a plurality of rollers for exerting pressure on an adhesive-backed tape or sheet and pressing it against the wafer surface. The rollers comprise rubber rollers having different axial lengths so that, even if the wafer is warped, the tape or sheet can be uniformly adhered to the whole surface of the wafer.