Abstract: A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.

Abstract: In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is ? and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA??/n.

Abstract: A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.

Abstract: In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is ? and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA??/n.

Abstract: An optical semiconductor device includes an insulating substrate provided with a first electrode and a second electrode each extending from the obverse surface onto the reverse surface of the substrate. The first electrode includes a die-bonding pad extending on the obverse surface of the substrate and a first terminal extending on the reverse surface of the substrate. The second electrode includes a wire-bonding pad extending on the obverse surface of the substrate and a second terminal extending on the reverse surface of the substrate. An LED chip is bonded to the die-bonding pad of the first electrode. The LED chip is also connected to the wire-bonding pad of the second electrode by a wire. The wire and the LED chip are enclosed by a resin package. The wire-bonding pad has a thickness of 10 ?m-30 ?m, and the second terminal has a thickness of 5 ?m-9 ?m.

Abstract: An LED device includes an LED chip die-bonded to a frame with a die-bonding material, wherein the die-bonding material contains Ag, a fine white powder, and solder particles. The LED device is superior in both reflectance and bonding strength because of the use of the die-bonding material.

Abstract: An ultraviolet ray emitting element, a blue color converting layer containing a blue color light emitting fluorescent material that is excited by ultraviolet rays and emits blue light, a green color converting layer as the same and a red color converting layer as the same are prepared, and the blue color converting layer, the green color converting layer and the red color converting layer are stacked on the ultraviolet ray emitting element in this order. Consequently, it is possible to easily obtain white light that has high color rendering properties. In order to obtain white color that exerts high color rendering properties, the average particle sizes of the fluorescent materials are preferably made greater in the order of the blue color light emitting fluorescent material, the green color light emitting fluorescent material and the red color light emitting fluorescent material.

Abstract: An ultraviolet ray emitting element, a blue color converting layer containing a blue color light emitting fluorescent material that is excited by ultraviolet rays and emits blue light, a green color converting layer as the same and a red color converting layer as the same are prepared, and the blue color converting layer, the green color converting layer and the red color converting layer are stacked on the ultraviolet ray emitting element in this order. Consequently, it is possible to easily obtain white light that has high color rendering properties. In order to obtain white color that exerts high color rendering properties, the average particle sizes of the fluorescent materials are preferably made greater in the order of the blue color light emitting fluorescent material, the green color light emitting fluorescent material and the red color light emitting fluorescent material.

Abstract: A semiconductor light-emitting device has a semiconductor light-emitting element 3 mounted on an electrode 2 formed on a surface of an insulating substrate 1, and has a reflective case 5 provided on the insulating substrate 1 so as to reflect the light from the light-emitting element 3, with the space inside the reflective case 5 sealed with a translucent resin 6. The reflective case 5 has a grained portion 51 formed over at least part of the surface thereof over which it makes contact with the translucent resin 6. This effectively prevents the translucent resin from coming off the reflective case. To enable the semiconductor light-emitting device to emit light with more even intensity in all directions, the grained portion is formed, preferably, at least in the portions of the reflective case 5 that face the side surfaces of the semiconductor light-emitting element.

Abstract: A semiconductor light emitting device including a first semiconductor light emitting chip in which a first semiconductor light emitting layer is formed on a first substrate, a second semiconductor light emitting chip in which a second semiconductor light emitting layer is formed on a second substrate, and a bonding material for bonding the first semiconductor light emitting chip and the second semiconductor light emitting chip to each other in a stacked state.

Abstract: In a white semiconductor light-emitting device, an ultraviolet light-emitting element 3 is used as a light-emitting element, and a phosphor layer 6 is formed that has a blue-light-emitting phosphor 61 and a yellow-light-emitting phosphor 62 mixedly diffused therein. This structure helps reduce variations in the produced white light among individual devices and enhance the productivity and light conversion efficiency of the device. For higher light conversion efficiency, the blue-light-emitting and yellow-light-emitting phosphors 61 and 62 are, preferably, phosphors that absorb ultraviolet light and emit blue and yellow light respectively.

Abstract: A semiconductor light-emitting device has a semiconductor light-emitting element 3 mounted on an electrode 2 formed on a surface of an insulating substrate 1, and has a reflective case 5 provided on the insulating substrate 1 so as to reflect the light from the light-emitting element 3, with the space inside the reflective case 5 sealed with a translucent resin 6. The reflective case 5 has a grained portion 51 formed over at least part of the surface thereof over which it makes contact with the translucent resin 6. This effectively prevents the translucent resin from coming off the reflective case. To enable the semiconductor light-emitting device to emit light with more even intensity in all directions, the grained portion is formed, preferably, at least in the portions of the reflective case 5 that face the side surfaces of the semiconductor light-emitting element.

Abstract: A semiconductor light emitting device including a first semiconductor light emitting chip in which a first semiconductor light emitting layer is formed on a first substrate, a second semiconductor light emitting chip in which a second semiconductor light emitting layer is formed on a second substrate, and a bonding material for bonding the first semiconductor light emitting chip and the second semiconductor light emitting chip to each other in a stacked state.

Abstract: A light-emitting diode has a light-emitting chip, a base on which the light-emitting chip is mounted and that is provided with a reflector cup that reflects frontward the light radiated from the light-emitting chip, and a reflective member that reflects sideward both the light traveling frontward directly from the light-emitting chip and the light traveling frontward after being reflected from the reflector cup. The reflective member contains a fluorescent substance at least in a superficial portion thereof. The light reflected from the reflective member contains the light from the light-emitting chip and the light from the fluorescent substance. The light-emitting chip and the base are sealed in a translucent resin. The end surface of the translucent resin opposing the reflector cup is formed into a concave conical surface, and the resin containing the fluorescent substance is applied to this concave surface to form the reflective member.

Abstract: In a chip-type light-emitting device, terminal electrodes are formed at both ends of the surface of a chip substrate, and a light-emitting element and a diode for protecting the light-emitting element at least against a reverse voltage are connected in parallel between the terminal electrodes. The chip substrate is fitted with a reflective cover formed by integrally forming a reflecting portion that permits the light from the light-emitting element to exit from the chip-type light-emitting device in a predetermined direction and a light-shielding portion that shields the diode from the light entering the chip-type light-emitting device from outside. Alternatively, a light-shielding member is provided so as to cover the diode so that the diode is shielded from the light striking it. In either way, a leak current through the diode can be prevented.

Abstract: An LED lamp arrangement has at least one pair of lead terminals, an LED element attached to an end of one lead terminal, a metal wire connecting the LED element to the other lead terminal, a light-transmitting molded portion sealingly enclosing the ends of the lead terminals and the LED element, and a black coating on a rear surface of the molded portion to enhance recognition of the lighted condition of the LED lamp.