Abstract: The pattern transfer apparatus includes a first substrate on which a circuit pattern of an arbitrary semiconductor device is drawn, a first stage including a substrate holding mechanism for holding the first substrate, an illumination optical system for illuminating the circuit pattern of the semiconductor device drawn on the first substrate, a second stage on which a second substrate can be mounted, a reducing optical system or an equimultiple optical system for transferring a part of the circuit pattern of the semiconductor device drawn on the first substrate, and a mechanism for moving at least one of first and second elements, the first element being one of the first and second stages and the second element being the reducing optical system or an equimultiple optical system, wherein the first stage has a holding mechanism for holding one of substrates of at least two sizes and for changing a gripping force in accordance with the sizes of the substrates.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: Disclosed is a focusing ion beam apparatus, comprising an ion source, focusing and deflecting means for focusing and deflecting an ion beam obtained by the ion source, and a plurality of gas introducing means for a plurality of gases to be supplied onto the surface of a sample to deposit an insulating film. According to the apparatus, a silicon compound gas and a gas mainly consisting of an element other than silicon as a plurality of the gases are supplied onto the surface of the sample, then the ion beam obtained from the ion source is irradiated onto the gases. Thereby, the gases are decomposed so that an insulating film consisting of a silicon oxide or a silicon nitride is deposited on a desired oxide or a silicon nitride is deposited on a desired position of the surface of the sample.

Abstract: A method of forming a fine pattern with a charged beam, comprises steps of irradiating, with a charged beam, a predetermined region of a sample to form an exposure pattern on the sample, and irradiating, with at least one of a charged beam or an electromagnetic wave, and at a dose smaller than the dose for forming the main pattern, the entire surface of the specific pattern and nonpattern regions around the specific pattern region to perform an auxiliary exposure. The step of performing the auxiliary exposure is performed at a high voltage of, for example, more than 30 KeV so as not to change the molecular distribution along the direction of thickness of an irradiated portion of the sample.

Abstract: According to the present invention, a simplified process is provided for drawing a picture pattern and an alignment pattern on a substrate at a scaling factor .alpha. by utilizing an energy beam exposure device. According to the invention, a scale conversion of 1/.alpha. is first applied to the alignment mark patterns. The parameters of the exposure device such as beam diameter, beam scanning interval, beam scanning deflection amplitude, frequency division factor, and displacement velocity are altered in accordance with the desired scaling factor .alpha.. The chip pattern data and the altered alignment mark data are then utilized together for drawing the pattern of the substrate without need for re-adjustment during the drawing process.

Abstract: An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accordance with the gate region, source and drain regions, and the field region of a semiconductor device including a transistor having short gate length and width.

Abstract: A processing method using a focused ion beam is proposed which uses a focused ion beam radiation apparatus. When a specimen is irradiated with the focused ion beam in order to be etched, the desired etching depth of the specimen is preset as a function of a location. The ion dose of the focused ion beam, the acceleration voltage, or the etching time may be varied in accordance with the preset data.

Abstract: A variable shaping type electron beam exposing apparatus is provided which comprises an electron gun which irradiates an electron beam from the front end of a cathode chip; shaping plates having openings of variable shapes for shaping the electron beam irradiated from the electron gun into the shapes of these openings; and an objective lens for focusing the electron beam passed through the shaping plates into a predetermined shape on a sample. In this apparatus, the cathode chip is made of single-crystal lanthanum hexaboride whose axial orientation is <310>, the front end of it is formed into a circular conical shape, and half the vertical angle of the front end is set to be between 60.degree. and 85.degree.. The maximum area of the image on the sample is between 2 to 50 .mu.m.sup.2.

Abstract: An electron beam apparatus comprises an electron gun having a cathode consisting of single-crystal lanthanum hexaboride and a plurality of electron lenses for projecting the cross-over image of an electron beam emitted from the electron gun as a reduced-scale image onto a sample. It further comprises a circuit for measuring the brightness and shape of the cross-over image projected onto the sample and the emission pattern of the electron beam emitted from the electron gun, and a circuit for applying a bias voltage, with which the cross-over image has a desired brightness and is round and the emission pattern is anisotropic, to the electron gun.

Abstract: An electron gun having a cathode of a lanthanum hexaboride single crystal is disclosed in which the axis of the cathode is set to such a crystal orientation that the electron beam has two intensive emission regions which are asymmetrical with each other in intensity. In the electron gun, even at a low heating temperature of the cathode, a single spot of an image by the electron beam of a more intensive emission region since the electron beam of a weaker intensity emission region is blocked by an aperture.

Abstract: An electron source section including a first detecting sub-section and a first control sub-section and an image formation section including a second detecting sub-section and a second control sub-section are arranged in series. The first detecting sub-section detects at least one of the shape, diameter, brightness and spatial position of a crossover image formed by the electron source section to become an electron source of the image formation section and the direction of emission of the electron beam emitted from such crossover image, thereby to control the first control sub-section. The second detecting sub-section detects at least one of the shape and size of an electron beam image formed on a subject to be irradiated by the beam, and the current of the electron beam forming the electron beam image, thereby to control the second control sub-section.

Abstract: The diameter of an electron beam at a crossover point can be set to a predetermined value by adjusting a heater current through a heater of an electron gun and a voltage between an emitter of the electron gun and wehnelt electrode. The diameter of the electron beam incident onto an object to be exposed can be varied by varying the diameter of the electron beam at the crossover point. This can be done without adjusting an electron beam lens and deflection electrode of an electron beam exposing apparatus. The diameter of the electron beam incident onto an object to be exposed can be set to a predetermined value dependent upon a pattern to be described.

Abstract: An electron beam exposure apparatus comprises a pair of electrostatic deflecting plates so disposed that the center thereof in the direction of an advancing electron beam emitted from an electron gun is located on the crossover point of said beam, a variable voltage source for said deflecting plates and an aperture disposed in the path of the deflected electron beam.

Abstract: An insulated-gate field-effect transistor having improved high-speed operation characteristics and high channel controllability includes a source region having first and second diffused regions and a drain region having first and second diffused regions. The first diffused regions of both the source and drain regions are formed by diffusion of a first impurity having relatively low diffusion coefficient and the second diffused regions of both the source and drain regions are formed by diffusion of a second impurity having relatively high diffusion coefficient.