Abstract: This invention is a process for forming film of amorphous material on a support. The amorphous material comprises at least either of hydrogen atom or halogen atom and at least either of silicon atom or germanium atom as a matrix. The film is formed by utilizing a discharge of direct current or low frequency alternating current and, particularly, is radiated with an electromagnetic wave which sensitizes the said amorphous material.

Abstract: A photoconductive member comprising a support for photoconductive member, a photoconductive layer constituted of an amorphous material comprising silicon atom as a matrix and a barrier layer between said support and said photoconductive layer, said barrier layer having a double-layer structure of a first barrier layer constituted of an amorphous material comprising silicon atom as a matrix and containing impurities which control the property of conductivity and a second barrier layer constituted of an electrically insulating material different from said amorphous material constituting said first barrier layer.

Abstract: An electrophotographic image forming member having on a substrate a photoconductive layer constructed by laminating a crystalline silicon layer and an amorphous silicon layer.

Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and a photoconductive layer which is laid on said substrate and constituted of an amorphous material containing at least one of hydrogen atom or halogen atom in a matrix of silicon atom, said substrate being constituted of aluminum oxide containing chemi-structually water at least on the surface thereof.

Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing oxygen atoms in at least a part thereof, the content of the oxygen atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

Abstract: A photoelectric conversion type information processing device constructed with a photoelectric conversion section including a plurality of photoelectric conversion elements arranged in an array or in a matrix form, a common electrode for the photoelectric conversion elements, independent electrodes for each of the photoelectric conversion elements, and a photoelectric conversion layer interposed between the common electrode and the independent electrode; and a time-sequential signal conversion section for introducing thereinto in parallel, in response to a light signal input, a plurality of signal outputs from the photoelectric conversion elements and rendering the signal as introduced to be a time-sequential output.

Abstract: This invention provides a photo electro transducer device having a photo electro transducer unit in which plural photo electro transducer elements having light receiving faces are arranged in an array, and a crosstalk preventing unit composed of diode elements respectively connected electrically to these photo electro transducer elements.

Abstract: Disclosed is a panchromatic photoconductive element for electrophotography having a layered structure comprising a substrate, a barrier layer and a photoconductive layer. The barrier layer inhibits injection of carriers from the substrate. Amorphous silicon forms a matrix for either the photoconductive layer or the barrier layer.

Abstract: A photoelectric transducing element with a high polymer substrate, being characterized in that the element comprises a conductor layer formed on a flexible high polymer insulation film substrate and comprising at least one pair of independent conductor patterns and a photoelectric transducing layer superposed on the patterned portion of the conductor layer and consisting of a thin film of amorphous photoconductive material formed by means of a thin film forming means.

Abstract: An electrophotographic photosensitive member comprising an electric charge injection layer, an amorphous photoconductive layer on said charge injection layer, and an insulating layer on said amorphous photoconductive layer, said charge injection layer containing halogen as an impurity.

Abstract: A photoelectric information input apparatus has a photoelectric converting unit including a photoelectric converting layer provided between a linear array of picture element electrodes in a number n and a counter electrode provided in facing relationship to said array and composed of a charge generating portion provided at the side of an electrode transparent to the incident light and of a charge transporting portion for effectively transporting the charge generated in said charge generating portion, said photoelectric converting layer having thickness monotonously changing from an end to the other of said counter electrode. An insulating layer is provided between said photoelectric converting layer and said counter electrode or/and picture element electrodes. There are generated control signals for controlling said photoelectric converting unit so as to obtain electric signals corresponding to the optical signals received by said photoelectric converting portion.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: An electrophotographic photosensitive member having an amorphous deposition layer as a photoconductive layer, in which the amorphous deposition layer is formed by gradual increase in a substrate temperature during deposition of the photoconductive material.

Abstract: An electrophotographic photosensitive member having an insulating layer overlaid on the one side of an amorphous photoconductive layer is characterized in that said photosensitive member further comprises two layers: a charge injection layer and a subsidiary charge injection layer overlaid on the other side of the photoconductive layer with the subsidiary charge injection layer being interposed between the photoconductive layer and the charge injection layer, said subsidiary charge injection layer having a lower free charge density than that in the photoconductive layer and being able to make it easy to inject an amount of electric charge from the charge injection layer into the photoconductive layer whereas said charge injection layer has a higher free charge density than that in the photoconductive layer and serves as a main supply source of the electric charge to be injected into the photoconductive layer.

Abstract: In a photosensitive element including an electroconductive layer, a photoconductive layer manifesting persistent internal polarization and a highly insulative layer and utilized in the method of electrophotography wherein a first electric field is applied to deposit a charge of one polarity on the surface of the highly insulative layer, and a second field is applied to deposit a charge of the opposite polarity concurrently with the projection of a light image to form a latent image on the surface of the highly insulative layer, there is provided a vapor deposited layer at the interface between the photoconductive layer and the highly insulative layer which consists of a mixture of a first Se-Te alloy having a percentage of Te therein such that it is a highly photosensitive material and a second Se-Te alloy having a percentage of Te therein such that it has high charge trapping capability.