Patents by Inventor Tadakazu Kobayashi

Tadakazu Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5362710
    Abstract: A process for preparing a thin film of superconducting material is disclosed in which films are deposited from a defined target. The thin films prepared by the process are characterized by high critical temperature of superconductivity and a smaller discrepancy between the critical temperature and the onset temperature at which superconductivity is observed.
    Type: Grant
    Filed: December 28, 1992
    Date of Patent: November 8, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuhiko Fujita, Tadakazu Kobayashi, Hideo Itozaki, Saburo Tanaka, Shuji Yazu, Tetsuji Jodai
  • Patent number: 5286712
    Abstract: This invention relates to new superconducting material having a composition represented by the general formula:A.sub.u B.sub.v C.sub.w D.sub.x E.sub.
    Type: Grant
    Filed: September 30, 1992
    Date of Patent: February 15, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuhiko Fujita, Tadakazu Kobayashi, Hideo Itozaki, Saburo Tanaka, Shuji Yazu, Tetsuji Jodai
  • Patent number: 5175140
    Abstract: A new high Tc superconducting compound oxide material represented by the general formula:AuBvCwCuxOyin which"A" is selected from the group consisting of magnesium(Mg), calcium(Ca), strontium(Sr) and barium(Ba);"B" is selected from the group consisting of yttrium(Y), lanthanum(La), and lanthanide elements;"C" is selected from the group consisting of vanadium (V), tantalum(Ta), indium(In), and thallium(Tl), and ##EQU1##
    Type: Grant
    Filed: August 3, 1990
    Date of Patent: December 29, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuhiko Fujita, Tadakazu Kobayashi, Hideo Itozaki, Saburo Tanaka, Shuji Yazu, Tetsuji Jodai
  • Patent number: 4612559
    Abstract: A PIN solar cell of amorphous silicon with a high photovoltaic conversion efficiency is provided, in which in the P type layer, the electric conductivity of a zone in contact with an electrode is higher than that of another zone in contact with the I type layer.
    Type: Grant
    Filed: March 8, 1984
    Date of Patent: September 16, 1986
    Assignee: Director General of Agency of Industrial Science & Technology
    Inventors: Hajime Hitotsuyanagi, Tadashi Igarashi, Masayuki Ishii, Tadakazu Kobayashi