Patents by Inventor Tadaki Nakahori
Tadaki Nakahori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7952670Abstract: According to an aspect of the present invention, there is provided a liquid crystal display that includes a gate electrode and line formed on a transparent insulating substrate, a gate insulating film covering the gate electrode and line, a semiconductor layer formed on the gate insulating film, a source electrode, a source line, and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The semiconductor layer is integrally formed of three portions which are a crossover portion of the source line and the drain line, a TFT portion, and a connecting portion connecting the crossover portion to the TFT portion. A part of the crossover portion on the connecting portion side and the whole connecting portion are covered by the source electrode and the source line.Type: GrantFiled: December 5, 2007Date of Patent: May 31, 2011Assignee: Mitsubishi Electric CorporationInventors: Tadaki Nakahori, Hatsumi Kimura, Fumihiro Goto, Toshio Araki
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Patent number: 7915062Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.Type: GrantFiled: June 13, 2007Date of Patent: March 29, 2011Assignee: Mitsubishi Electric CorporationInventors: Shinichi Yano, Tadaki Nakahori, Nobuaki Ishiga
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Publication number: 20080198288Abstract: According to an aspect of the present invention, there is provided a liquid crystal display that includes a gate electrode and line formed on a transparent insulating substrate, a gate insulating film covering the gate electrode and line, a semiconductor layer formed on the gate insulating film, a source electrode, a source line, and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The semiconductor layer is integrally formed of three portions which are a crossover portion of the source line and the drain line, a TFT portion, and a connecting portion connecting the crossover portion to the TFT portion. A part of the crossover portion on the connecting portion side and the whole connecting portion are covered by the source electrode and the source line.Type: ApplicationFiled: December 5, 2007Publication date: August 21, 2008Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Tadaki NAKAHORI, Hatsumi Kimura, Fumihiro Goto, Toshio Araki
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Publication number: 20080138921Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.Type: ApplicationFiled: February 11, 2008Publication date: June 12, 2008Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Tadaki Nakahori, Nobuaki Ishiga, Kensuke Nagayama, Takuji Yoshida
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Patent number: 7352421Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.Type: GrantFiled: March 1, 2006Date of Patent: April 1, 2008Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Tadaki Nakahori, Nobuaki Ishiga, Kensuke Nagayama, Takuji Yoshida
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Publication number: 20070295963Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.Type: ApplicationFiled: June 13, 2007Publication date: December 27, 2007Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Shinichi YANO, Tadaki Nakahori, Nobuaki Ishiga
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Publication number: 20070096098Abstract: A conductive structure includes a laminated structure of an upper layer and a lower layer. The lower layer is formed of an aluminum alloy containing at least one kind of Group 8 elements in periodic table. The upper layer is laminated on the lower layer and formed of an aluminum alloy containing at least one kind of Group 8 elements in periodic table and nitrogen.Type: ApplicationFiled: October 20, 2006Publication date: May 3, 2007Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Nobuaki Ishiga, Kensuke Nagayama, Kenichi Miyamoto, Tadaki Nakahori, Kazunori Inoue
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Publication number: 20060267120Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.Type: ApplicationFiled: March 1, 2006Publication date: November 30, 2006Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Tadaki Nakahori, Nobuaki Ishiga, Kensuke Nagayama, Takuji Yoshida
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Publication number: 20060261335Abstract: An object of the present invention is to provide a liquid crystal display device that is capable of preventing anomalous growth of a protective insulating film when the protective insulating film is formed to cover a conductive film that was formed by patterning an amorphous conductive film into given shape with a certain etchant. A liquid crystal display device according to an example of the present invention includes a glass substrate having a thin film transistor formed on its upper surface, a color filter substrate having an opposing electrode formed on its upper surface, and a liquid crystal sandwiched between the glass substrate and the color filter substrate. A pixel electrode is connected to the drain electrode of a thin film transistor. Also, the pixel electrode is covered by a protective insulating film having transparency. The pixel electrode contains an oxide compound containing In and Zn.Type: ApplicationFiled: February 24, 2006Publication date: November 23, 2006Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Tadaki Nakahori, Yuusuke Uchida, Kensuke Nagayama, Nobuaki Ishiga
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Publication number: 20050239239Abstract: There is provided a thin-film transistor being capable of reducing dispersion in threshold voltage and a method of fabricating the same. The thin-film transistor includes an insulating undercoating layer formed for a substrate, a semiconductor active layer of polycrystalline silicon formed on the insulating undercoating layer, and a gate electrode formed insulated on the semiconductor active layer, the insulating undercoating layer being of a silicon oxide film layer formed using TEOS as a material and by a plasma CVD method. Preferably, the concentration of carbon atoms of the silicon oxide film layer is within a range of 6×1019 atoms/cm3 to 1×1020 atoms/cm3 and the concentration of nitride atoms is not more than 3×1019 atoms/cm3.Type: ApplicationFiled: April 20, 2005Publication date: October 27, 2005Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Shoichi Takanabe, Tadaki Nakahori, Yusuke Uchida
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Publication number: 20030227579Abstract: A highly reliable liquid crystal display is obtained at a high yield rate by preventing disconnection of upper wiring (signal line) due to level difference due to lower wiring (scan line) in a region where the wirings (scan line and signal line) are intersected via an insulating film or the like in a TFT array substrate in which the TFT acting as a switching element is arrayed and formed into a matrix. A scan line (gate wiring) 2 has a pattern of including at least one bend 8a on both sides of the pattern in a region where the scan line (gate wiring) 2 and the signal line (source wiring) 6 are intersected.Type: ApplicationFiled: March 24, 2003Publication date: December 11, 2003Applicant: KABUSHIKI KAISHA ADVANCED DISPLAYInventors: Tadaki Nakahori, Makoto Ootani
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Patent number: 6399428Abstract: A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+a-Si:H film 5a.Type: GrantFiled: February 1, 2001Date of Patent: June 4, 2002Assignees: Kabushiki Kaisha Advanced Display, Mitsubishi Electric CorporationInventors: Tadaki Nakahori, Tetsuya Sakoguchi, Kazuhiko Noguchi, Kouji Yabushita, Takeshi Kubota
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Publication number: 20010007358Abstract: A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus.Type: ApplicationFiled: February 1, 2001Publication date: July 12, 2001Applicant: Kabushiki Kaisha Advanced DisplayInventors: Tadaki Nakahori, Tetsuya Sakoguchi, Kazuhiko Noguchi, Kouji Yabushita, Takeshi Kubota
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Patent number: 6236062Abstract: A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+ a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+ a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+ a-Si:H film 5a.Type: GrantFiled: October 5, 1998Date of Patent: May 22, 2001Assignees: Kabushiki Kaisha Advanced Display, Mitsubishi Electric CorporationInventors: Tadaki Nakahori, Tetsuya Sakoguchi, Kazuhiko Noguchi, Kouji Yabushita, Takeshi Kubota
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Patent number: 6190951Abstract: The present invention is directed to method for manufacturing a liquid crystal display apparatus in which a thin film transistor formed by successively depositing on a glass substrate a gate electrode, a gate insulating film, an active layer made of amorphous silicon, a source electrode and a drain electrode is used for driving liquid crystal. The method includes steps of: forming the gate electrode by patterning a gate metal layer coating the glass substrate by a wet etching process using an etchant containing cerium ammonium nitrate; removing an etching reaction product adhering on the substrate by washing it with a hydrofluoric acid solution; and forming the gate insulating film.Type: GrantFiled: July 2, 1999Date of Patent: February 20, 2001Assignee: Advanced Display Inc.Inventors: Tadaki Nakahori, Masakuni Fujiwara, Harumi Yasuda