Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer including an oxide semiconductor as a main component and forming an insulator layer on a surface of the semiconductor layer. The insulator layer includes silicon oside as a main component and has a hydrogen atom concentration that is less than or equal to 1×1021 atoms/cm3.

Abstract: A plasma CVD device (10) includes a vacuum container (21) including a space accommodating a film formation subject (S), a storage (30) storing hydrogen-free isocyanate silane and heating the isocyanate silane to generate an isocyanate silane gas supplied to the vacuum container (21), a pipe (11) connecting the storage (30) to the vacuum container (21) to supply the isocyanate silane gas generated by the storage (30) to the vacuum container (21), a temperature adjuster (12) adjusting a temperature of the pipe (11) to 83° C. or higher and 180° C. or lower, an electrode (22) disposed in the vacuum container (21), and a power supply (23) supplying high-frequency power to the electrode (22). When a silicon oxide film is formed on the film formation subject (S) in the vacuum container (21), pressure of the vacuum container (21) is greater than or equal to 50 Pa and less than 500 Pa.

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer including an oxide semiconductor as a main component and forming an insulator layer on a surface of the semiconductor layer. The insulator layer includes silicon oside as a main component and has a hydrogen atom concentration that is less than or equal to 1×1021 atoms/cm3.

Abstract: A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.

Abstract: A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.

Abstract: In order to provide a reliable connection between a circular plate mounted on a hub and a friction material having a pair of oppositely faced friction surfaces extending in the axial direction in a clutch disc, a sub plate is secured to the circular plate. This permits the interposition therebetween of frictional material in such a manner that a plurality of axial openings are provided in the circular plate and the sub plate and the friction surfaces project from each opening in opposite axial direction.

Abstract: An automotive vehicle clutch disc apparatus has a clutch hub provided with arm portions and an outer two-piece housing including, a clutch hub connected to a manual transmission, a stopper connected integrally with the clutch hub, a resilient element wrapping outward of the clutch hub, the stopper having a plurality of lugs, the housing having plurality of openings, the lugs are operatively connected to the opening and the clutch hub equipped with the resilient element applied to an initial deformation during assembly.

Abstract: A clutch assembly has a clutch cover secured to a flywheel, a diaphragm spring positioned outside the clutch cover, and an annular pressure plate positioned inside the clutch cover. The diaphragm spring is pivotally mounted on the clutch cover by rivets disposed in several openings formed in the diaphragm spring. The pressure plate is connected with the clutch cover by a suitable number of flexible drive straps which are disposed between the clutch cover and the pressure plate and extend chordally across the pressure plate. One end of each drive strap is secured to the pressure plate by a rivet. The other end of each drive strap is secured to the clutch cover by a rivet which is positioned radially inwardly of the inner periphery of the pressure plate and is aligned with an opening formed in the diaphragm spring.