Abstract: Disclosed is a technique capable of preventing the breakage of a semiconductor wafer with a diameter of 300 mm in an RTP equipment. When the RTP process composed of a heating process, a main process for maintaining the predetermined final temperature for a predetermined time, and a cooling process is performed to a semiconductor wafer with a diameter of 300 mm, the temperature of the semiconductor wafer is measured by the use of pyrometers, an open-loop control in which the difference in the in-plane temperature of a semiconductor wafer is controlled within 90° C. is performed in the heating process at a temperature lower than 500° C., and a closed-loop control is performed in the heating process at a temperature of 500° C. or higher and in the main process. In this manner, it is possible to reduce the warp of the semiconductor wafer and to prevent the breakage thereof.

Abstract: A heavy-duty gas turbine includes a compressor; a combustion liner; a turbine blade in a single stage or multi-stages; and a turbine nozzle provided in correspondence to the turbine blade. The turbine blade has a dovetail secured to a turbine disk and has an overall length of not less than 180 mm, and it is made of a single-crystal Ni-base alloy whose .gamma. phase is a single crystal. Operating gas temperature is not less than 1400.degree. C., and metal temperature of a first blade is not less than 1000.degree. C. under working stress.

Abstract: A heavy-duty gas turbine includes a compressor; a combustion liner; a turbine blade in a single stage or multi-stages; and a turbine nozzle provided in correspondence to the turbine blade. The turbine blade has a dovetail secured to a turbine disk and has an overall length of not less than 180 mm, and it is made of a single-crystal Ni-base alloy whose .gamma. phase is a single crystal. Operating gas temperature is not less than 1400.degree. C., and metal temperature of a first blade is not less than 1000.degree. C. under working stress.