Abstract: A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 ?m nor more than 140 ?m and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 ?m or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

Abstract: A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 ?m nor more than 140 ?m and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 ?m or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

Abstract: A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 ?m nor more than 140 ?m and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 ?m or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

Abstract: A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 ?m nor more than 140 ?m and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 ?m or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

Abstract: A stacked electronic part comprises a first electronic part which is adhered onto a circuit board via a first adhesive layer and a second electronic part which is adhered onto the first electronic part via a second adhesive layer. An insulating resin having a filling viscosity of 1 Pa·s or more and less than 1000 Pa·s or a photo-setting insulating resin is filled in the spaces below first bonding wires which are connected to the first electronic part. Thus, the occurrence of bubbles resulting from the resin non-filled portions below the wires can be prevented. Besides, the first electronic part and the second electronic part are adhered via an insulating resin layer having an adhering viscosity of 1 kPa·s or more and 100 kPa·s or less. Therefore, the occurrence of an insulation failure, a short circuit or the like resulting from a contact between the bonding wires of the lower electronic part and the upper electronic part can be prevented.