Abstract: A printed wiring board including: an insulated substrate; a conductive circuit provided on one side of this insulated substrate; a cover layer covering the insulated substrate and the conductive circuit; and a conductive particle buried in this cover layer, wherein the conductive particle is buried in the cover layer so that the conductive particle contacts the conductive circuit and protrudes from the cover layer; and the conductive particle serves as an electric contact point.

Abstract: A printed wiring board including: an insulated substrate; a conductive circuit provided on one side of this insulated substrate; a cover layer covering the insulated substrate and the conductive circuit; and a conductive particle buried in this cover layer, wherein the conductive particle is buried in the cover layer so that the conductive particle contacts the conductive circuit and protrudes from the cover layer; and the conductive particle serves as an electric contact point.

Abstract: The present invention provides a key switch diaphragm capable of obtaining a good click feeling and capable of avoiding contact failure and having a high durability. A key switch diaphragm 30 comprises a thin plate having flexibility and conductivity, and the key switch diaphragm 30 includes a truncated pedestal 16, and a spherical domical portion 18 being raised toward an upper portion of the pedestal 16 on the side of the upper portion of the pedestal 16. The domical portion 18 is provided at its substantially central portion with an outwardly raised portion 32 being raised toward an outer surface of the domical portion 18. An edge of the outwardly raised portion 32 on the side of its inner surface forms a contact 34.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: The present invention provides a key switch diaphragm capable of obtaining a good click feeling and capable of avoiding contact failure and having a high durability. A key switch diaphragm 30 comprises a thin plate having flexibility and conductivity, and the key switch diaphragm 30 includes a truncated pedestal 16, and a spherical domical portion 18 being raised toward an upper portion of the pedestal 16 on the side of the upper portion of the pedestal 16. The domical portion 18 is provided at its substantially central portion with an outwardly raised portion 32 being raised toward an outer surface of the domical portion 18. An edge of the outwardly raised portion 32 on the side of its inner surface forms a contact 34.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) is formed on a Si wafer (1). An opening portion is made in this insulating layer (3), and subsequently a rerouting layer (2) is formed. Next, a resin layer (4) is formed on the rerouting layer (2). The resin layer (4) is then cured so that the rerouting layer (2) and a Cu foil (5) are bonded to each other through the resin layer (4). Thereafter, a ring-like opening portion (4a) is made in the resin layer (4), and a Cu plating layer (8) is formed inside this opening portion (4a).