Abstract: A plated material reduces insertion and withdrawal forces when used in a connector. A terminal member for a connector and a connector therewith are also provided. The plated material comprises a substrate 3 made of Cu or a Cu alloy and a metal plating layer 6 formed on the surface of the substrate 3. A soft region 6A spreading in a network-shape and a hard region 6B surrounded by the network of the soft region 6A coexists in the metal plating layer 6. The soft region 6A has a Vickers hardness of 20 to 250, while the hard region 6B has a Vickers hardness of 60 to 700, which is at least 30 higher than that of the soft region 6A. An average size of the network of the soft region 6A is from 5 to 500 ?m.

Abstract: A plated material reduces insertion and withdrawal forces when used in a connector. A terminal member for a connector and a connector therewith are also provided. The plated material comprises a substrate 3 made of Cu or a Cu alloy and a metal plating layer 6 formed on the surface of the substrate 3. A soft region 6A spreading in a network-shape and a hard region 6B surrounded by the network of the soft region 6A coexists in the metal plating layer 6. The soft region 6A has a Vickers hardness of 20 to 250, while the hard region 6B has a Vickers hardness of 60 to 700, which is at least 30 higher than that of the soft region 6A. An average size of the network of the soft region 6A is from 5 to 500 &mgr;m.

Abstract: The connector terminal of the present invention is a connector terminal fabricated with a plated Cu alloy thin plate and is provided with a pair of mutually engaging male terminal 1 and female terminal 2; wherein, in a mutually sliding portion of the male terminal 1 and the female terminal 2, the Vickers hardness of one of the terminals is within the range of 60-700 HV, the Vickers hardness of the other terminal is within the range of 20-150 HV, and the difference between the Vickers hardness values of both is 15 HV or more. As a result, together with having stable contact resistance, both low insertion and removal force as well as superior heat resistance can be obtained.

Abstract: A copper based alloy for use as a material for electrical and electronic parts has a chemical composition by weight, of 0.5 to 3% Ni, 0.1 to 0.9% Sn, 0.08 to 0.8% Si, 0.1 to 3 Zn, 0.007 to 0.25% Fe, 0.001 to 0.2% P, 0.001 to 0.2% Mg, 0.0001 to 0.001% C, and if required, further containing 0.001 to 0.3% at least one element of Cr and Zr, and the balance being Cu and inevitable impurities. The obtained copper alloy is excellent in electric conductivity, solder-exfoliation resistance when bent, high-temperature creep strength, and migration resistance, while being superior in hot workability and blankability to the conventional copper based alloy.

Abstract: A copper-based alloy connector excellent in electrical conductivity, adherence of solder of the connector when bent, high-temperature creep strength, and migration resistance, consists essentially by weight percent of 0.5 to 3% Ni, 0.1 to 0.9% Sn, 0.08 to 0.8% Si, 0.1 to 3% Zn, 0.007 to 0.25% Fe, 0.001 to 0.2% P, and the balance of Cu and inevitable impurities. The copper-based alloy connector can withstand use for a long term in a high-temperature and high-humidity environment.

Abstract: A copper alloy material for lead frames for semiconductor devices. The lead frame material consists essentially of:Ni: 0.5-2 percent by weight;Sn: 1.2-2.5 percent by weight;Si: 0.05-0.5 percent by weight;Zn: 0.1-1 percent by weight;Ca: 0.001-0.01 percent by weight;Mg: 0.001-0.05 percent by weight;Pb: 0.001-0.01 percent by weight; andCu and inevitable impurities: the balance.The lead frame material obtained possesses not only high strength, but also excellent thermal-exfoliation resistance of the solder, and also enhances the wear resistance of the stamping dies, while possessing excellent other properties, such as repeated-bending strength, thermal conductivity and electrical conductivity, platability, and solderability, which are required of lead frames.

Abstract: A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is within a range from 0.5 to 0.85, preferably within a range from 0.60 to 0.85, so as to form a compound of magnesium and phosphorus or Mg.sub.3 P.sub.2. The copper base lead material possesses satisfactory properties required of a metal material for leads in semiconductor devices, such as strength, thermal resistance, and stampability, and further possesses excellent heat radiation to an extent suitable for use as leads of semiconductor devices having high wiring densities. The invention also includes the semiconductor device containing said leads.

Abstract: A copper base alloy for leads of an integrated circuit consisting essentially of from 0.5 to 1.5% by weight of iron, from 0.5 to 1.5% by weight of tin, from 0.01 to 0.35% by weight of phosphorus, and the balance of copper and inevitable impurities. Said alloy possesses satisfactory properties which are required of leads of integrated circuits.