Patents by Inventor Tadao Toda
Tadao Toda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20120108011Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: ApplicationFiled: December 30, 2011Publication date: May 3, 2012Applicant: Sanyo Electric Co., Ltd.Inventors: Masayuki HATA, Tadao TODA, Shigeyuki OKAMOTO, Daijiro INOUE, Yasuyuki BESSHO, Yasuhiko NOMURA, Tsutomu YAMAGUCHI
-
Patent number: 8101465Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: GrantFiled: March 20, 2007Date of Patent: January 24, 2012Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tadao Toda, Shigeyuki Okamoto, Daijiro Inoue
-
Patent number: 7655484Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: GrantFiled: April 26, 2005Date of Patent: February 2, 2010Assignee: Sanyo Electric Co., Ltd.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Patent number: 7629623Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: GrantFiled: June 16, 2008Date of Patent: December 8, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Patent number: 7589357Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: GrantFiled: October 30, 2007Date of Patent: September 15, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tadao Toda, Shigeyuki Okamoto, Daijiro Inoue, Yasuyuki Bessho, Yasuhiko Nomura, Tsutomu Yamaguchi
-
Publication number: 20080315221Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: June 16, 2008Publication date: December 25, 2008Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20080179601Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: October 30, 2007Publication date: July 31, 2008Inventors: Tadao TODA, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Patent number: 7372077Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: GrantFiled: January 29, 2004Date of Patent: May 13, 2008Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tadao Toda, Shigeyuki Okamoto, Daijiro Inoue, Yasuyuki Bessho, Yasuhiko Nomura, Tsutomu Yamaguchi
-
Publication number: 20080073664Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: ApplicationFiled: October 30, 2007Publication date: March 27, 2008Applicant: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tadao Toda, Shigeyuki Okamoto, Daijiro Inoue, Yasuyuki Bessho, Yasuhiko Nomura, Tsutomu Yamaguchi
-
Publication number: 20080069162Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: October 30, 2007Publication date: March 20, 2008Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20080067541Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: October 30, 2007Publication date: March 20, 2008Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20070292979Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: ApplicationFiled: March 20, 2007Publication date: December 20, 2007Applicant: SANYO ELECTRIC CO., LTD.Inventors: Masayuki Hata, Tadao Toda, Shigeyuki Okamoto, Daijiro Inoue, Yasuyuki Bessho, Yasuhiko Nomura, Tsutomu Yamaguchi
-
Publication number: 20070235750Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: June 4, 2007Publication date: October 11, 2007Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20070077669Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: December 4, 2006Publication date: April 5, 2007Applicant: SANYO ELECTRIC CO., LTD.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20060011946Abstract: A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).Type: ApplicationFiled: February 28, 2003Publication date: January 19, 2006Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura, Masayuki Shouno, Yuuji Hishida, Keiichi Yodoshi, Daijiro Inoue, Takashi Kano, Nobuhiko Hayashi
-
Publication number: 20050191775Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: April 26, 2005Publication date: September 1, 2005Applicant: SANYO ELECTRIC CO., LTD.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Patent number: 6890779Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: GrantFiled: September 9, 2004Date of Patent: May 10, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20050029539Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: ApplicationFiled: September 9, 2004Publication date: February 10, 2005Applicant: Sanyo Electric Co., Ltd.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
-
Publication number: 20040245540Abstract: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.Type: ApplicationFiled: January 29, 2004Publication date: December 9, 2004Inventors: Masayuki Hata, Tadao Toda, Shigeyuki Okamoto, Daijiro Inoue, Yasuyuki Bessho, Yasuhiko Nomura, Tsutomu Yamaguchi
-
Patent number: 6791120Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.Type: GrantFiled: March 24, 2003Date of Patent: September 14, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura