Abstract: The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

Abstract: The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

Abstract: The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

Abstract: The invention includes a material containing aluminum grains which have an average grain size of less than 20 &mgr;m. The material contains manganese, with a total non-aluminum content of 0.01 to 10.0% by weight. The material is preferably used as a sputtering target. A sputtering target is produced by subjecting the material to plastic working at a processing percentage of at least 5% at a processing rate of at least 100%/second.

Abstract: A titanium material with titanium grains, wherein the average crystal grain size is less than 4 &mgr;m. The material is at least 99.99% (4N purity) titanium. The alloy is especially useful as a sputtering target. The material is produced by processing the material with plastic working of at least 5% at a rate of at least 100%/second.

Abstract: The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

Abstract: The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

Abstract: First power supply circuit 8, second power supply circuit 6, and third power supply circuit 9 are connected to form a power supply unit 5. The first power supply circuit 8 includes a direct current power supply 8A and switching element 8B. The power supply circuit 8 does not include any substantial resistance, and has comparatively low inductance and impedance characteristics. The power supply circuit 6 includes a direct current power supply 6A, switching element 6B, and current limiting resistor 6C. The power supply circuits 6, 8, and 9 are connected to the gap using a cable 11 as a common interconnect. A high frequency alternating current circuit is formed by the power supply circuit 8, conductor 11, coupling transformer 13, and the gap. In this event, switches 6F, 6G, 9F, and 9G, associated with power supply circuits 6 and 9, are opened, and the power supply circuits 6 and 9 are completely disconnected from the above high frequency alternating current circuit.

Abstract: A transformer converts high frequency pulses, transmitted through a coaxial cable from a power supply unit positioned at a distance from a gap formed between a tool electrode and a workpiece and having a direct current power supply and switching element, into high frequency alternating current pulses, and is connected to that gap. The transformer includes a ring core, a primary winding connected to the coaxial cable, and a secondary winding connected to the gap. Preferably, these windings will have a minimum number of turns. Further, a bypass means is provided which selectively passes the direct current pulse from the direct current power supply or the alternating current pulse induced in the transformer to the gap. It is preferable to house the bypass means and the transformer in a single case positioned in the vicinity of the gap.

Abstract: An aluminum alloy wiring layer comprising 0.01 to 1.0 wt. % of scandium, or 0.01 to 1.0 wt. % of scandium and 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%. A process for producing the same and an aluminum alloy sputtering target used therefor are also disclosed. The aluminum alloy wiring layer of the present invention is suitable as an advanced large-scale integrated circuit.

Abstract: This invention relates to a method for electrolyzing an alkali metal halide aqueous solution in a three-chamber horizontal type electrolytic cell which comprises a top cathode chamber bounded by a cation exchange membrane, a middle chamber, and a bottom anode chamber bounded by a diaphragm. Halogen gas and dilute alkali metal halide solution are taken out of the anode chamber in such a manner as to make the anode chamber work as a gas chamber.