Patents by Inventor Tadashi Aimoto

Tadashi Aimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9321653
    Abstract: [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride. [Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: April 26, 2016
    Assignee: TOKUYAMA CORPORATION
    Inventors: Ayao Akiyoshi, Tadashi Aimoto
  • Patent number: 8679228
    Abstract: The invention recovers highly pure hydrogen from the exhaust purge gas and reuses it as a hydrogen source in other production steps contributing to greatly reducing the disposal cost and the cost of producing polysilicon. The hydrogen chloride contained in the exhaust gas discharged from the step of depositing polysilicon by using trichlorosilane, is adsorbed by active carbon. The active carbon layer is then purged with the hydrogen gas, and the adsorbed hydrogen chloride is desorbed. Next, the exhaust purge gas is brought into contact with a hydrogen chloride-absorbing solution such as an aqueous solution of sodium hydroxide to remove the hydrogen chloride from the exhaust purge gas and to separate and recover the highly pure hydrogen gas. The recovered hydrogen gas is compressed and is fed as a hydrogen source to other steps of producing, for example, fumed silica.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: March 25, 2014
    Assignee: Tokuyama Corporation
    Inventors: Ayao Akiyoshi, Tadashi Aimoto
  • Publication number: 20120301385
    Abstract: [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride. [Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.
    Type: Application
    Filed: February 9, 2011
    Publication date: November 29, 2012
    Inventors: Ayao Akiyoshi, Tadashi Aimoto
  • Publication number: 20120137881
    Abstract: [Problems] Attempts have already been made to effectively utilize the by-produced hydrogen chloride in the exhaust gas discharged from the step of producing polysilicon. Hydrogen in the exhaust gas, too, has been partly utilized without using but discarding, however, the purge hydrogen that is used for desorbing the hydrogen chloride adsorbed in the above step. The invention recovers highly pure hydrogen from the exhaust purge gas and reuses it as a hydrogen source in other production steps contributing to greatly reducing the disposal cost and the cost of producing polysilicon. [Means for Solution] The hydrogen chloride contained in the exhaust gas discharged from the step of depositing polysilicon by using trichlorosilane, is adsorbed by active carbon. The active carbon layer is then purged with the hydrogen gas, and the adsorbed hydrogen chloride is desorbed.
    Type: Application
    Filed: September 13, 2010
    Publication date: June 7, 2012
    Inventors: Ayao Akiyoshi, Tadashi Aimoto