Abstract: Provided is a plating film containing Au and Tl, including Tl oxides including Tl2O on a surface of the plating film, a ratio of Tl atoms constituting Tl2O to a total of Tl atoms constituting the Tl oxides and Tl atoms constituting Tl simple substances on the surface being 40% or more.

Abstract: Provided is a plating film containing Au and Tl, including Tl oxides including Tl2O on a surface of the plating film, a ratio of Tl atoms constituting Tl2O to a total of Tl atoms constituting the Tl oxides and Tl atoms constituting Tl simple substances on the surface being 40% or more.

Abstract: [Problem] To provide a heat spreader capable of removing heat from an element more efficiently and immediately than an existing one, and also capable of satisfactorily responding to further enhancement in performance and output of various apparatuses, and a method for efficiently manufacturing the same. [Solution] A heat spreader includes a Cu—Mo layer made of a Cu—Mo composite material and having an average thickness of less than or equal to 0.6 mm and a variation in thickness of less than or equal to 0.1 mm, and a Cu layer directly stacked on each of both surfaces thereof. A method for manufacturing the heat spreader includes planarizing a plate material of the Cu—Mo composite material constituting the Cu—Mo layer, and roll-bonding a Cu plate constituting the Cu layer to each of both surfaces thereof.

Abstract: [Problem] To provide a heat spreader capable of removing heat from an element more efficiently and immediately than an existing one, and also capable of satisfactorily responding to further enhancement in performance and output of various apparatuses, and a method for efficiently manufacturing the same. [Solution] A heat spreader includes a Cu—Mo layer made of a Cu—Mo composite material and having an average thickness of less than or equal to 0.6 mm and a variation in thickness of less than or equal to 0.1 mm, and a Cu layer directly stacked on each of both surfaces thereof. A method for manufacturing the heat spreader includes planarizing a plate material of the Cu—Mo composite material constituting the Cu—Mo layer, and roll-bonding a Cu plate constituting the Cu layer to each of both surfaces thereof.

Abstract: A composite material is a Mo—Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo—Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a molybdenum-copper composite and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: A composite material is a Mo—Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo—Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.

Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate.

Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate.

Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates.

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

Abstract: A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

Abstract: A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

Abstract: In a plastic-packaged semiconductor device molded by a synthetic resin, a heat sink is formed by a sheet which has a thermal expansion coefficient between 9.0.times.10.sup.-6 /K and 23.times.10.sup.-6 /K and a thermal conductivity greater than 200 W/m.multidot.K, which are selected in relation to those of the synthetic resin. The sheet is manufactured by mixing a first metal of a high melting point with a second metal of a low melting point lower than the first metal and by pressing and sintering the mixture. The first and the second metal may be molybdenum and copper, respectively. Alternatively, the sheet may be a composite sheet composed of a molybdenum mesh interposed between a pair of aluminum layers or a stacked sheet composed of a sintered layer of a mixture of molybdenum and copper and a coated layer of either molybdenum or copper.