Abstract: The preform of the biaxially drawn, blow-molded bottle comprises polyethylene terephthalate layers 2 and at least a gas barrier layer 3 laminated with the polyethylene terephthalate layers. The gas barrier layer 3 extends downward from a level halfway to the height of the neck 4 including the neck ring 5, or at least from above the neck ring 5, down virtually to the lower end of body 6. The gas barrier layer 3 inside the wall of the neck 4 has an average thickness corresponding to a third (?) or less of the maximum thickness of the gas barrier layer 3 inside the wall of the body 6, allowing most of the gas barrier material to be located in the wall of the body 6. Thus, the gas barrier material is effectively utilized, and in the case of the heat-resistant bottle, the neck has the predetermined dimensions without fail after the whitening treatment.

Abstract: A semiconductor memory device includes a self-testing circuit and a self-redundancy circuit with simple structures. The self-testing circuit includes a comparison circuit which compares write data with read data with respect to normal memory blocks and redundant memory blocks, and a decision circuit which decides if the semiconductor memory device is good or defective based on the plurality of comparison result signals. A signal transfer and holding circuit is connected between the comparison circuit and the decision circuit to transfer the plurality of comparison result signals to the decision circuit and to supply the plurality of comparison result signals to the self-redundancy circuit as a test result.

Abstract: The preform of the biaxially drawn, blow-molded bottle comprises polyethylene terephthalate layers 2 and at least a gas barrier layer 3 laminated with the polyethylene terephthalate layers. The gas barrier layer 3 extends downward from a level halfway to the height of the neck 4 including the neck ring 5, or at least from above the neck ring 5, down virtually to the lower end of body 6. The gas barrier layer 3 inside the wall of the neck 4 has an average thickness corresponding to a third (⅓) or less of the maximum thickness of the gas barrier layer 3 inside the wall of the body 6, allowing most of the gas barrier material to be located in the wall of the body 6. Thus, the gas barrier material is effectively utilized, and in the case of the heat-resistant bottle, the neck has the predetermined dimensions without fail after the whitening treatment.

Abstract: A semiconductor memory device includes a self-testing circuit and a self-redundancy circuit with simple structures. The self-testing circuit includes a comparison circuit which compares write data with read data with respect to normal memory blocks and redundant memory blocks, and a decision circuit which decides if the semiconductor memory device is good or defective based on the plurality of comparison result signals. A signal transfer and holding circuit is connected between the comparison circuit and the decision circuit to transfer the plurality of comparison result signals to the decision circuit and to supply the plurality of comparison result signals to the self-redundancy circuit as a test result.

Abstract: In heating a material radiant at high temperatures, such as a steel product, in a heating furnace, the said material is charged into the heating furnace to heat. A discrimination mark is previously drawn on the surface of material to be discriminated on a portion readily watched from outside the furnace. A heat resisting paint sensitive to near ultraviolet rays is used to make the mark. The said material radiant-heated in the heating furnace is discriminated from outside the furnace as being radiant by applying near ultraviolet rays of a high pressure mercury lamp thereto from outside the furnace to provide a sharp contrast between the said material surface and the said discrimination mark for the discrimination of the said mark from outside the furnace.