Patents by Inventor Tadashi Hisamatsu

Tadashi Hisamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6799742
    Abstract: The object of the invention is to provide a solar panel and a method for manufacturing the same, wherein the manufacture of the solar panel for use in space and repair work thereon can be performed easily and in little time. An entirety of the solar panel is configured by detachably linking a plurality of unit solar cell modules, which include a plurality of solar cells and connection wires for connecting the solar cells, and electrically connecting the unit solar cell modules to one another. Thus, a solar panel can be easily fabricated by combining standardized unit solar cell modules. Moreover, by simply mechanically connecting the unit solar cell modules, they can be electrically connected, and thus the time necessary for manufacture or repair of solar panels can be shortened.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: October 5, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuyo Nakamura, Tatsuo Saga, Kunio Kamimura, Tadashi Hisamatsu
  • Patent number: 6552259
    Abstract: In this bypass-function added solar cell, a plurality of island-like p+ regions, which is third regions, are formed at a boundary between a p-type region and an n-type region layer constituting a substrate so that the p+ regions project into the region and the region and are separated away from the surface of the substrate. Therefore, in this solar cell, unlike prior art counterparts, the insulating film for isolating the p+ regions and the n electrodes constituting the np+ diode from one another is no longer necessary, thus allowing a reduction in manufacturing cost. As a result, a bypass-function added solar cell with a bypass-diode function added thereto can be provided with low cost and by simple process.
    Type: Grant
    Filed: October 18, 2000
    Date of Patent: April 22, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shigeyuki Hosomi, Tadashi Hisamatsu
  • Patent number: 6504091
    Abstract: A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1-yGay)1-xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1-zInzAs.
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: January 7, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tadashi Hisamatsu, Kazuyo Nakamura, Yuji Komatsu, Masafumi Shimizu
  • Publication number: 20020066828
    Abstract: The object of the invention is to provide a solar panel and a method for manufacturing the same, wherein the manufacture of the solar panel for use in space and repair work thereon can be performed easily and in little time. An entirety of the solar panel is configured by detachably linking a plurality of unit solar cell modules, which include a plurality of solar cells and connection wires for connecting the solar cells, and electrically connecting the unit solar cellmodules to one another. Thus, a solar panel can be easily fabricated by combining standardized unit solar cellmodules. Moreover, by simply mechanically connecting the unit solar cell modules, they can be electrically connected, and thus the time necessary for manufacture or repair of solar panels can be shortened.
    Type: Application
    Filed: December 4, 2001
    Publication date: June 6, 2002
    Inventors: Kazuyo Nakamura, Tatsuo Saga, Kunio Kamimura, Tadashi Hisamatsu
  • Publication number: 20010018924
    Abstract: A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1−yGay)1−xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1−zInzAs.
    Type: Application
    Filed: February 9, 2001
    Publication date: September 6, 2001
    Inventors: Tadashi Hisamatsu, Kazuyo Nakamura, Yuji Komatsu, Masafumi Shimizu
  • Patent number: 5738732
    Abstract: A solar cell includes an n type diffusion layer formed on a first main surface side of a p.sup.- type monocrystalline Si substrate, and a p.sup.+ type semiconductor layer formed on a second main surface side of substrate and having an energy bandgap narrower than that of Si and a dopant impurity concentration higher than that of substrate.
    Type: Grant
    Filed: June 4, 1996
    Date of Patent: April 14, 1998
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuyo Nakamura, Tadashi Hisamatsu
  • Patent number: 5580395
    Abstract: A solar cell with integrated bypass function includes: a first conductivity type substrate 1 selected from P-type and N-type substrates; a region 2 of a second conductivity type which is opposite to the first conductivity type, the region 2 being formed on a light receiving side of the substrate; at least one third region 4 of the first conductivity type, having a higher dopant impurity concentration than the substrate 1 and being formed in a portion of the light receiving side of the substrate 1 so as to be in contact with both the substrate 1 and the region 2 of the second conductivity type; an insulator film 9 formed on at least a part of the at least one third region 4; and a light receiving side electrode 7 formed on the insulator film 9 so as to be in partial contact with the region 2 of the second conductivity type.
    Type: Grant
    Filed: July 13, 1995
    Date of Patent: December 3, 1996
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hideki Yoshioka, Tadashi Hisamatsu
  • Patent number: 5330584
    Abstract: A solar cell includes a first semiconductor region of a P type, a second semiconductor region of an N type in contact with the first semiconductor region so as to form a PN junction therebetween, and a third semiconductor region of a P.sup.+ type in contact with both the first and second semiconductor regions and having a higher impurity concentration than that of the first semiconductor region.
    Type: Grant
    Filed: October 13, 1992
    Date of Patent: July 19, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tatsuo Saga, Tadashi Hisamatsu, Toshinobu Matsutani