Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

Abstract: A transducer includes: a substrate having a hole; a backplate facing an opening of the hole; and a diaphragm facing the backplate with an air gap therebetween. The backplate includes a backplate body, a backplate support secured to the substrate, and through-holes perforating the backplate body; the backplate body includes a center region and three or more peripheral regions partially or completely surrounding the center region; the through-holes defines a percentage open area in each of the center region and the three or more peripheral regions, and the percentage open areas are mutually different; the percentage open area in the center region is larger than the percentage open area in each of the three or more peripheral regions; and the percentage open area in the outermost peripheral region of the backplate body is smaller than the percentage open area in the peripheral region near the center region.

Abstract: A MEMS structure that includes: a substrate having an opening; a diaphragm arranged opposite the opening in the substrate; a plurality of anchors securing the diaphragm to the substrate or to another component; and a fixed membrane surrounding the diaphragm over a slit. The outline of the diaphragm protrudes toward the anchors and includes a predetermined intersecting structure that when viewed from the normal to the diaphragm, the diaphragm protrudes toward the anchors in at least one location on the diaphragm between two intersection points of the outline of the diaphragm and the outline of the opening in the substrate. The intersecting structure is configured such that the distance between the two intersection points is greater than the width of the diaphragm at a location closest to an anchor.

Abstract: A capacitance type transducer has a substrate with an opening on a surface thereof, a back plate arranged to oppose the opening of the substrate, and a vibrating electrode film arranged to oppose the back plate across a gap between the vibrating electrode film and the back plate. The capacitance type transducer converts a displacement of the vibrating electrode film into a change in capacitance between the vibrating electrode film and the back plate. The capacitance type transducer has a pressure releasing flow channel which is an air flow channel formed by a gap between a part of the vibrating electrode film and a protruding portion integrally provided on the back plate.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface, first to eighth regions, a first thyristor, and a second thyristor. The seventh region with the impurity concentration higher than that of the first region is formed in the first region while being apart from the sixth region electrically connected to the gate electrode, and being electrically connected to the first electrode. The eighth region with the impurity concentration higher than that of the third region is formed in contact with the second surface side of the third region and the fourth region, and with the second surface, while being electrically connected to the fourth region by the second electrode. The seventh region has the impurity concentration higher than that of the first region. The eighth region has the impurity concentration higher than that of the third region.

Abstract: A transducer includes: a substrate having a hole; a backplate facing an opening of the hole; and a diaphragm facing the backplate with an air gap therebetween. The backplate includes a backplate body, a backplate support secured to the substrate, and through-holes perforating the backplate body; the backplate body includes a center region and three or more peripheral regions partially or completely surrounding the center region; the through-holes defines a percentage open area in each of the center region and the three or more peripheral regions, and the percentage open areas are mutually different; the percentage open area in the center region is larger than the percentage open area in each of the three or more peripheral regions; and the percentage open area in the outermost peripheral region of the backplate body is smaller than the percentage open area in the peripheral region near the center region.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface, first to eighth regions, a first thyristor, and a second thyristor. The seventh region with the impurity concentration higher than that of the first region is formed in the first region while being apart from the sixth region electrically connected to the gate electrode, and being electrically connected to the first electrode. The eighth region with the impurity concentration higher than that of the third region is formed in contact with the second surface side of the third region and the fourth region, and with the second surface, while being electrically connected to the fourth region by the second electrode. The seventh region has the impurity concentration higher than that of the first region. The eighth region has the impurity concentration higher than that of the third region.

Abstract: A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. Leg pieces are provided in corner portions of the diaphragm, within the diaphragm. The diaphragm and the leg pieces are separated by slits, and the leg pieces extend in the diagonal directions of the diaphragm. The leg pieces are connected to the diaphragm at the ends on the outer peripheral side of the diaphragm, and the ends on the central side of the diaphragm are supported by anchors provided on the upper surface of the silicon substrate. A back plate is provided above the silicon substrate so as to cover the diaphragm, and a fixed electrode plate is provided on the lower surface of the back plate so as to oppose the diaphragm.

Abstract: A capacitance type transducer has a substrate with an opening on a surface thereof, a back plate arranged to oppose the opening of the substrate, and a vibrating electrode film arranged to oppose the back plate across a gap between the vibrating electrode film and the back plate. The capacitance type transducer converts a displacement of the vibrating electrode film into a change in capacitance between the vibrating electrode film and the back plate. The capacitance type transducer has a pressure releasing flow channel which is an air flow channel formed by a gap between a part of the vibrating electrode film and a protruding portion integrally provided on the back plate.

Abstract: A framing member forming a frame of a factory building is provided with a slit for attaching a holder on one side face of the framing member, the slit extending in a longitudinal direction of the framing member, the slit is provided with a detachment prevention mechanism configured to exert an action of preventing an insertion piece of the holder from being detached and to fix the holder to the framing member, along with an insertion of the insertion piece into the slit, and the holder is provided with a pinching piece configured to pinch an end edge portion of a wall panel between the pinching piece and the framing member to fix the wall panel to the framing member, along with the insertion of the insertion piece into the slit.

Abstract: The present invention relates to aryl substituted carboxamide derivatives of formula (I) or a pharmaceutically acceptable salt thereof, which have blocking activities of T-type calcium channels or voltage gated sodium channels as the tetrodotoxin-sensitive (TTX-S) blocker such as NaV1.3 and NaV1.7, and which are useful in the treatment or prevention of disorders and diseases in which T-type calcium channels or voltage gated sodium channels are involved. The invention also relates to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which T-type calcium channels or voltage gated sodium channels are involved.

Abstract: A diaphragm is arranged on the upper surface of a silicon substrate so as to cover a chamber in the silicon substrate. Multiple anchors are provided on the upper surface of the silicon substrate, and the lower surfaces of corner portions of the diaphragm are supported by the anchors. Also, a fixed electrode plate is provided above the diaphragm with an air gap therebetween. In a view from a direction perpendicular to the upper surface of the silicon substrate, the entire length of the outer edge of the diaphragm located between adjacent anchors is located outward of a line segment that circumscribes the edges of the adjacent anchors on the side distant from the center of the diaphragm. Also, one or two or more through-holes are formed in the diaphragm in the vicinity of the anchors.

Abstract: An acoustic transducer has a substrate having an opening in an upper surface thereof, a vibration electrode plate disposed above the substrate, and having an outer edge thereof facing the upper surface of the substrate with a gap therebetween, a fixed electrode plate facing the vibration electrode plate, and a plurality of projections protruding on a lower surface of the outer edge of the vibration electrode plate. The vibration electrode plate covers an upper side of the opening. The plurality of projections are disposed so as to not be positioned along a straight line or a curved line parallel to an edge of the opening in at least a part of one or at least two arrays formed on the lower surface of the outer edge.

Abstract: An acoustic transducer has a substrate having a cavity that is open at a top of the substrate, a vibration electrode film provided above the substrate so as to cover the cavity, and a fixed electrode film provided a distance above the vibration electrode film. A gap is formed between an upper surface of the substrate and a lower surface of the vibration electrode film around the cavity. In the gap across which the upper surface of the substrate and the lower surface of the vibration electrode film face each other, a narrow portion of the gap that is narrower than another portion of the gap is disposed. The narrow portion of the gap extends linearly.

Abstract: A method to provide processed brown rice, in which the content of free ferulic acid that contributes to the amelioration of dementia, can be increased. High water pressure-treated processed brown rice characterized by being obtained by applying hydrostatic pressure of 100 MPa to 600 MPa to brown rice in water at 0 degrees C. to 35 degrees C. to thereby increase the content of free ferulic acid in the brown rice, and drying the brown rice immediately after the application of the hydrostatic pressure. Fermented food such as bread, sake or sake lees that are manufactured by using the processed brown rice as raw material, characterized in that the content of free ferulic acid in the fermented food has been increased by fermenting the processed brown rice with using yeast or by pregelatinizing the processed brown rice and then fermenting the same with using yeast.

Abstract: A diaphragm is arranged on the upper surface of a silicon substrate so as to cover a chamber in the silicon substrate. Multiple anchors are provided on the upper surface of the silicon substrate, and the lower surfaces of corner portions of the diaphragm are supported by the anchors. Also, a fixed electrode plate is provided above the diaphragm with an air gap therebetween. In a view from a direction perpendicular to the upper surface of the silicon substrate, the entire length of the outer edge of the diaphragm located between adjacent anchors is located outward of a line segment that circumscribes the edges of the adjacent anchors on the side distant from the center of the diaphragm. Also, one or two or more through-holes are formed in the diaphragm in the vicinity of the anchors.

Abstract: A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. Leg pieces are provided in corner portions of the diaphragm, within the diaphragm. The diaphragm and the leg pieces are separated by slits, and the leg pieces extend in the diagonal directions of the diaphragm. The leg pieces are connected to the diaphragm at the ends on the outer peripheral side of the diaphragm, and the ends on the central side of the diaphragm are supported by anchors provided on the upper surface of the silicon substrate. A back plate is provided above the silicon substrate so as to cover the diaphragm, and a fixed electrode plate is provided on the lower surface of the back plate so as to oppose the diaphragm.

Abstract: To provide crystal polymorphs of 4-[5-(pyridin-4-yl)-1H-1,2,4-triazol-3-yl]pyridine-2-carbonitrile, which is a useful pharmaceutical, and a production method therefor. Through purification of a corresponding salt, recrystallization, or storage under humidified conditions, three different crystal forms; i.e., crystalline polymorphs of 4-[5-(pyridin-4-yl)-1H-1,2,4-triazol-3-yl]pyridine-2-carbonitrile are produced.