Patents by Inventor Tadashi Ishigaki
Tadashi Ishigaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200231872Abstract: The present invention relates to a phosphor and a composition.Type: ApplicationFiled: July 24, 2018Publication date: July 23, 2020Applicant: MERCK PATENT GMBHInventors: Hiroshi OKURA, Stephan DERTINGER, Tarunjot SINGH, Ryuta SUZUKI, Kazuhisa AZUMA, Eiji NISHIHARA, Tadashi ISHIGAKI, Koutoku OHMI, Ryota YAMANASHI, Kenji TODA, Daniel SZABO, Noriyuki MATSUDA
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Publication number: 20200205415Abstract: The present invention relates to a composition comprising at least one phosphor.Type: ApplicationFiled: July 25, 2018Publication date: July 2, 2020Applicant: Merck Patent GmbHInventors: Hiroshi OKURA, Stephan DERTINGER, Ryuta SUZUKI, Kazuhisa AZUMA, Ryota YAMANASHI, Eiji NISHIHARA, Tadashi ISHIGAKI, Koutoku OHMI, Kenji TODA
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Publication number: 20190031954Abstract: The present invention relates to a composition comprising a fluorescent material and a matrix material, a color conversion sheet and a light emitting diode device. The present invention further relates to the use of the composition in a color conversion sheet fabrication process, to the use of the color conversion sheet in optical devices or for agriculture purposes, and to the use of the fluorescent material and the matrix material in light emitting diode devices. Additionally, the invention relates to an optical device comprising the color conversion sheet and to a method for preparing the color conversion sheet and the optical device.Type: ApplicationFiled: January 18, 2017Publication date: January 31, 2019Applicant: Merck Patent GmbHInventors: Hiroshi OKURA, Stephan DERTINGER, Eiji NISHIHARA, Tadashi ISHIGAKI, Koutoku OHMI
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Patent number: 8816377Abstract: The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M1-a-xEuaMnx)L(Si1-bGeb)2O7,??(A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001?a?0.3, b is a numerical value satisfying 0?b?0.5, and x is a numerical value satisfying 0?x?0.2.Type: GrantFiled: November 28, 2011Date of Patent: August 26, 2014Assignee: Panasonic CorporationInventors: Kenji Toda, Tadashi Ishigaki
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Patent number: 8734680Abstract: There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5?x?1.9, preferably, 0.8?x?1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.Type: GrantFiled: April 12, 2011Date of Patent: May 27, 2014Assignees: Lead Chemical Company, Limited, Niigata UniversityInventors: Kenji Toda, Mineo Sato, Kazuyoshi Uematsu, Tadashi Ishigaki, Hideo Suda, Etsuko Minegishi, Yoshiaki Kudo
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Publication number: 20130292733Abstract: A crystalline material represented by M12a(M2bLc)M3dOyNx wherein M1 is at least one element selected from alkali metals, M2 is at least one element selected from Ca, Sr, and Ba, M3 is at least one element selected from Si and Ge, L is at least one element selected from rare earth elements, Bi, and Mn, a is 0.9 to 1.5, b is 0.8 to 1.2, c is 0.005 to 0.2, d is 0.8 to 1.2, x is 0.001 to 1.0, and y is 3.0 to 4.0 or less.Type: ApplicationFiled: December 2, 2011Publication date: November 7, 2013Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NIIGATA UNIVERSITYInventors: Kenji Toda, Kazuyoshi Uematsu, Mineo Sato, Tadashi Ishigaki, Yoshitaka Kawakami, Tetsu Umeda
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Publication number: 20130292609Abstract: A method for producing a silicate-based oxynitride phosphor, comprising a step of firing a raw material mixture while contacting the raw material mixture with a Si-containing gas containing gas phase Si to generate a silicate-based oxynitride phosphor.Type: ApplicationFiled: December 2, 2011Publication date: November 7, 2013Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, NIIGATA UNIVERSITYInventors: Kenji Toda, Kazuyoshi Uematsu, Mineo Sato, Tadashi Ishigaki, Yoshitaka Kawakami, Tetsu Umeda
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Publication number: 20130146930Abstract: The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M1-a-xEuaMnx)L(Si1-bGeb)2O7??, (A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001?a?0.3, b is a numerical value satisfying 0?b?0.5, and x is a numerical value satisfying 0?x?0.2.Type: ApplicationFiled: November 28, 2011Publication date: June 13, 2013Applicant: Panasonic CorporationInventors: Kenji Toda, Tadashi Ishigaki
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Publication number: 20130026414Abstract: There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5?x?1.9, preferably, 0.8?x?1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.Type: ApplicationFiled: April 12, 2011Publication date: January 31, 2013Inventors: Kenji Toda, Mineo Sato, Kazuyoshi Uematsu, Tadashi Ishigaki, Hideo Suda, Etsuko Minegishi, Yoshiaki Kudo
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Patent number: 8288804Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.Type: GrantFiled: May 22, 2009Date of Patent: October 16, 2012Assignee: Mitsumi Electric Co., Ltd.Inventors: Hiroaki Kikuchi, Osamu Takahashi, Katsunori Kondo, Tomoaki Yamabayashi, Kunio Ogasawara, Tadashi Ishigaki, Yutaka Hienuki, Motonori Nakamura, Agus Subagyo
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Publication number: 20110062419Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.Type: ApplicationFiled: May 22, 2009Publication date: March 17, 2011Inventors: Hiroaki Kikuchi, Osamu Takahashi, Katsunori Kondo, Tomoaki Yamabayashi, Kunio Ogasawara, Tadashi Ishigaki, Yutaka Hienuki, Motonori Nakamura, Agus Subagyo