Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range.

Abstract: An information processing apparatus is provided that executes a process sequence stored in a sequence table, based on a sequence code created for each process in the process sequence. The sequence code includes a process type that specifies a sequence table, a control target that specifies a control target, and a process number that specifies one particular process in the specified process sequence.

Abstract: The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.

Abstract: The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.

Abstract: The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.

Abstract: The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.

Abstract: The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.

Abstract: An information processing apparatus is provided that executes a process sequence stored in a sequence table, based on a sequence code created for each process in the process sequence. The sequence code includes a process type that specifies a sequence table, a control target that specifies a control target, and a process number that specifies one particular process in the specified process sequence.

Abstract: A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common.

Abstract: A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common.

Abstract: A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common.

Abstract: A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common.