Abstract: A sensor element includes a first silicon semiconductor portion, a second silicon semiconductor portion, a third silicon semiconductor portion, and a p-n junction. The first silicon semiconductor portion includes a first p-type impurity. The second silicon semiconductor portion is arranged on the first silicon semiconductor portion and includes a second p-type impurity. The third silicon semiconductor portion is arranged on the second silicon semiconductor portion and includes an n-type impurity. The p-n junction is defined between the second silicon semiconductor portion and the third silicon semiconductor portion. The sensor element has light-receiving sensitivity to light having a wavelength longer than a wavelength corresponding to a band gap of silicon.

Abstract: A method of manufacturing a non-classical light source device includes: providing a semiconductor structure that includes a first semiconductor region having a first impurity of a first conductivity type that is one of p-type or n-type, and a second semiconductor region having a second impurity of a second conductivity type that is the other of p-type or n-type; and irradiating the semiconductor structure with laser light in the presence of a forward current flowing through the semiconductor structure while the semiconductor structure is in thermal contact with a cooling base at a temperature higher than ?40° C. and lower than 15° C., thereby diffusing the second impurity.

Abstract: A light-emitting device includes at least one light-emitting element including a semiconductor layered portion and configured to emit light that has a predetermined wavelength and includes a first polarization component and a second polarization component; and at least one polarized light control member in contact with the at least one light-emitting element. The at least one polarized light control member includes a first structure and a second structure that are positioned in order from the at least one light-emitting element side. The first structure receives the light having the predetermined wavelength to generate near-field light. The second structure receives the near-field light and the light having the predetermined wavelength to emit light in which a proportion of the second polarization component is greater than a proportion of the first polarization component.

Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: There are provided a quantum dot, a plurality of quantum dots having a larger volume than the quantum dot, a light detection unit for detecting a light emission state of an output light from the plurality of quantum dots, and a light supply unit capable of supplying a control light to the plurality of quantum dots thereby to excite other exciters to a lower level, and controlling energy discharging of the exciters transiting to the lower level, wherein the control light to be supplied by the light supply unit is controlled per quantum dot based on the light emission state of the output light per quantum dot and previously-input search problem information.

Abstract: Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate.

Abstract: A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow of, at a portion where a local shape to enable generation of near field light is formed on a surface of the deposited material with the irradiation light, absorbing the irradiation light through a non-adiabatic process with the near field light, thereby generating electrons, and canceling generation of a local electric field based on the voltage, and a particle adsorbing flow of, at a portion where the shape is not formed, causing the portion where the local electric field is generated to sequentially adsorb particles forming the material, and shifting to the non-adiabatic flow when the shape is formed.

Abstract: A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1.

Abstract: Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate.

Abstract: A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1.

Abstract: A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0.

Abstract: A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0.