Abstract: Apparatuses and methods for managing a process that include schedule management, quality, and process management features. Information is stored on an authorized person in charge and a conformity standard for the work to be managed. From this information, a managing method of the work to be managed from among a plurality of managing methods classified in advance is determined. Processes are determined for each management method, and a time limit determined by the authorized person in charge for each managed process. Adherence standards related to the managed processes are included, as well as records made of the process information including the performance quality of the managed process.

Abstract: The fact is utilized that a threshold at which the degassing amount will steeply change upon variations in SiH content exists in the relation between the hydrophobic SiH content of an HSQ (Hydrogen SilsesQuioxane) film and the degassing amount from the HSQ film. An HSQ film having a relative SiH content or absolute H content so as to correspond to the threshold or more is used as one insulating layer in an insulating interlayer. The hygroscopicity of the HSQ film is reduced to suppress any line defects that are considered to be generated in an upper insulating layer owing to elimination of a hygroscopic component. Satisfied are both the demand for improving the reliability of a small contact hole and the demand for suppressing any interconnection delay. The integration degree of a semiconductor device can easily and reliably be increased.

Abstract: The present invention provides a purification process of K-252a, which comprises:treating microorganism cells containing K-252a represented by formula (I): ##STR1## with an alkaline solution to convert K-252a into K-252b represented by formula (II): ##STR2## or alkali salts thereof, which are then released out of the cells, methylating K-252b or alkali salts thereof to convert them into K-252a again, andisolating and collecting the resulting K-252a.