Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: The electroluminescent element includes an anode electrode, a cathode electrode, and a quantum dot (QD) layer including quantum dots and arranged between the anode electrode and the cathode electrode. The quantum dots are Cd-free quantum dots that include at least Zn and Se, and do not include Cd at a mass ratio of 1/30 or greater in relation to Zn. The particle size of each quantum dot is within a range from 3 nm to 20 nm.

Abstract: Provided is a light-emitting element having a high external quantum efficiency and a method for manufacturing the same. The light-emitting element is provided with a light-emitting layer, an electron transport layer, and an organic silicon compound. The light-emitting layer contains quantum dots. The electron transport layer is positioned on the light-emitting layer. The electron transport layer contains metal oxide particles. The organic silicon compound is positioned between the light-emitting layer and the electron transport layer. The organic silicon compound has at least one hydrocarbon group.

Abstract: A light-emitting element includes, in sequence, an anode, a hole transport layer, a luminous layer containing a plurality of quantum dots, an electron transport layer, and a cathode. The electron transport layer includes a plurality of inorganic nanoparticles having electron transportability, and an organic layer having electron transportability. The organic layer partly contains the plurality of inorganic nanoparticles, and includes a plurality of first hollows in an interface adjacent to the luminous layer. The plurality of first hollows are filled with the plurality of quantum dots.

Abstract: A light-emitting element according to the disclosure includes an anode electrode, a cathode electrode, and a first light-emitting layer that includes a plurality of first quantum dots and emits light of a first color. The first light-emitting layer is provided between the anode electrode and the cathode electrode, and each of the plurality of first quantum dots includes a compound containing each of three elements of Zn, Se, and Te. A combination of an average particle size of the plurality of first quantum dots and a composition ratio of the three elements is selected such that the peak wavelength of a light emission spectrum of the first light-emitting layer is greater than 394 nm and equal to or less than 474 nm.

Abstract: A light-emitting device includes: an anode electrode; a cathode electrode; a plurality of light-emitting layers sandwiched between the anode electrode and the cathode electrode; and a light absorption layer disposed between the plurality of light-emitting layers and a light extraction surface, wherein the plurality of light-emitting layers include InP based quantum dots and are configured to emit at least green color of light and red color of light, and the light absorption layer selectively absorbs light at 570 to 610 nm.

Abstract: The electroluminescent element includes a QD layer and a hole transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The hole transport layer includes poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4?-(N-(4-sec-butylphenyl)diphenylamine)]. A film thickness of the hole transport layer is 10 nm or more and 57 nm or less.

Abstract: The electroluminescent element includes a QD layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The film thickness of the QD layer is 12 nm or more and 49 nm or less.

Abstract: The electroluminescent element includes a QD layer and an electron transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The electron transport layer contains zinc oxide. A film thickness of the electron transport layer is 15 nm or more and 85 nm or less.

Abstract: The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Abstract: A light-emitting device includes: an anode electrode; a cathode electrode; a plurality of light-emitting layers sandwiched between the anode electrode and the cathode electrode; and a light absorption layer disposed between the plurality of light-emitting layers and a light extraction surface, wherein the plurality of light-emitting layers include InP based quantum dots and are configured to emit at least green color of light and red color of light, and the light absorption layer selectively absorbs light at 570 to 610 nm.