Patents by Inventor Tadashi Kontani
Tadashi Kontani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11289351Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a processing gas supply part configured to supply a processing gas to the substrate; a heater configured to heat the substrate; a transfer robot configured to transfer the substrate; a first power supply connected to at least one part selected from the group of the processing gas supply part, the heater, and the transfer robot; a first controller installed between the at least one part and the first power supply; a second power supply including two or more power sources configured to drive the first controller; and a second controller installed between the first controller and the second power supply and configured to allow power to be supplied to the first controller while setting a power ratio of each of the two or more power sources of the second power supply to a predetermined value.Type: GrantFiled: February 21, 2020Date of Patent: March 29, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Tomoyuki Yamada, Tadashi Kontani, Shigenori Tezuka
-
Patent number: 10825697Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.Type: GrantFiled: February 19, 2020Date of Patent: November 3, 2020Assignee: Kokusai Electric CorporationInventors: Tomoyuki Yamada, Tadashi Kontani, Seiyo Nakashima, Mikio Ohno
-
Publication number: 20200303219Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.Type: ApplicationFiled: February 19, 2020Publication date: September 24, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Tomoyuki YAMADA, Tadashi KONTANI, Seiyo NAKASHIMA, Mikio OHNO
-
Publication number: 20200194291Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a processing gas supply part configured to supply a processing gas to the substrate; a heater configured to heat the substrate; a transfer robot configured to transfer the substrate; a first power supply connected to at least one part selected from the group of the processing gas supply part, the heater, and the transfer robot; a first controller installed between the at least one part and the first power supply; a second power supply including two or more power sources configured to drive the first controller; and a second controller installed between the first controller and the second power supply and configured to allow power to be supplied to the first controller while setting a power ratio of each of the two or more power sources of the second power supply to a predetermined value.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Tomoyuki YAMADA, Tadashi KONTANI, Shigenori TEZUKA
-
Patent number: 9373499Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: April 20, 2015Date of Patent: June 21, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Publication number: 20160002789Abstract: A substrate processing apparatus includes a processing chamber housing a substrate, a vaporizer which vaporizes processing liquid and supply processing gas into the processing chamber, a reserve tank storing the processing liquid, a line switching unit connected to the reserve tank, a tank supply pipe connected to the line switching unit and supplies the processing liquid to the reserve tank, an exhausting unit connected to the line switching unit and exhausts the processing liquid in the reserve tank, and a controlling unit which controls the line switching unit to exhaust the processing liquid for exhausting the processing liquid from the reserve tank to the exhausting unit and exhaust the processing liquid in the pipe for supplying the processing liquid from the tank supply pipe to the exhausting unit before and/or after supplying the processing liquid from the processing liquid supplying pipe to the reserve tank.Type: ApplicationFiled: September 16, 2015Publication date: January 7, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tadashi KONTANI, Hideto TATENO, Atsushi UMEKAWA
-
Publication number: 20150228476Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: ApplicationFiled: April 20, 2015Publication date: August 13, 2015Applicant: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 9039912Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: November 12, 2012Date of Patent: May 26, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 8875656Abstract: A substrate processing apparatus includes a processing chamber in which a substrate is mounted, a gas supply unit that supplies processing gas into the processing chamber, a gas exhaust unit that exhausts atmospheric gas in the processing chamber, first and second electrodes to which high-frequency power is applied to set the processing gas to an active state. Each of the first and second electrodes includes a core wire formed of a metal and plural pipe bodies that are joined to one another through the core wire so as to be bendable, and less thermally deformed than the core wire.Type: GrantFiled: March 13, 2009Date of Patent: November 4, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Tetsuo Yamamoto, Nobuhito Shima, Nobuo Ishimaru
-
Patent number: 8555808Abstract: Disclosed is a substrate processing apparatus, including: a processing chamber to accommodate a plurality of substrates therein in such a way that the substrate are vertically stacked; a gas supply system to supply processing gas into the processing chamber; an exhaust system to exhaust an atmosphere from the processing chamber; at least a pair of electrodes made of flexible member extending in a stacking direction of the substrates to activate the processing gas; and protecting tubes to accommodate the electrodes therein, wherein each of the protecting tubes is provided with a bent portion at a higher position than an uppermost substrate, and a tip end of each of the electrodes is located on a tip end side of each of the protecting tubes over the bent portion.Type: GrantFiled: April 24, 2007Date of Patent: October 15, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Tetsuo Yamamoto, Tadashi Kontani
-
Patent number: 8544411Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: February 20, 2009Date of Patent: October 1, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 8518182Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: GrantFiled: May 6, 2011Date of Patent: August 27, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 8261692Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: GrantFiled: June 24, 2010Date of Patent: September 11, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
-
Patent number: 8047158Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: GrantFiled: October 31, 2007Date of Patent: November 1, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
-
Patent number: 8028652Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: March 20, 2007Date of Patent: October 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 8020514Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: January 21, 2009Date of Patent: September 20, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Publication number: 20110209664Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 7958842Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: GrantFiled: February 16, 2005Date of Patent: June 14, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
-
Patent number: 7900580Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: GrantFiled: October 31, 2007Date of Patent: March 8, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
-
Patent number: 7861668Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: October 31, 2007Date of Patent: January 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru