Abstract: A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

Abstract: A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; (ii) depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; (iii) introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and (iv) depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma.

Abstract: A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

Abstract: A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; (ii) depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; (iii) introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and (iv) depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma.