Abstract: A thermosensitive part sensing temperature; a temperature sensor for measurement provided in the unit and measuring temperature by contacting the unit with a body to be measured; a temperature detecting part detecting, from when the unit contacts the body, the time when the sensor senses a difference from an initial temperature of the sensor, and a measured temperature of the sensor at that time, and detecting, from when the difference is sensed, a time after a certain length of time and a measured temperature of the sensor at that time; an estimating part estimating, from the time when the difference is sensed and a time after a certain length of time, the time when the thermosensitive part contacts the body, and the measured temperature at that time; and a heat conduction analyzing part estimating the measured temperature based on output information from the temperature detecting part and the estimating part.

Abstract: A temperature measurement device (10) comprises: a thermosensitive unit (41) that senses temperature; a thin film thermosensitive element (1) for measurement capable of measuring the temperature by bringing the thermosensitive unit (41) into contact with a subject; a thin film thermosensitive element (2) for protective heating disposed to enable heat exchange with the thin film thermosensitive element (1) via an insulating layer (S1), and controlled so that the temperature thereof is equal to the temperature of the thin film thermosensitive element (1); a temperature control element (3) capable of causing the thin film thermosensitive element (1) to be in a temperature state in which the temperature thereof is a certain degree lower than the temperature of the subject; and a control processing unit (5) controlling the thin film thermosensitive element (1), the thin film thermosensitive element (2), and the temperature control element (3).

Abstract: Provided are: a contact force sensor which has high accuracy and sensitivity and is capable of ensuring strength; and a device provided with the contact force sensor. The present invention comprises: a sensor body (2) manufactured by processing a semiconductor material, wherein the sensor body (2) is provided with: a ring-shaped portion (21); a central portion (22) formed substantially in the center of the ring-shaped portion (21); a spoke portion (23) connected to the ring-shaped portion (21) from the central portion (22) toward the outside; and stress-electricity conversion elements (5) which are disposed at positions facing each other on the front side and the back side of the spoke portion (23), and convert the displacement of the spoke portion (23) into an electric signal.

Abstract: Provided is a pressure sensor that is compact, ensures insulation, and is highly reliable. A pressure sensor (1) comprises: a sensor body (2); a pressure sensor element (21) provided on one surface side of the sensor body (2); a through hole (24) which is formed from the one surface side of the sensor body (2) toward another surface side of the sensor body, and through which a lead wire (3) electrically connected to the pressure sensor element (21) is passed; and an insulation layer (24a) formed in the inner wall of the through hole (24). Passed through the through hole (24) is a conducting body core part (32), which is a part of the lead wire (3) from which an insulation coating has been removed.

Abstract: Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided.

Abstract: Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided.

Abstract: An improved thermopile infrared sensor is provided wherein thermoelectric elements are formed on a single crystalline silicon substrate containing a cavity therein. The thermopile infrared sensor contains a first dielectric film covering the cavity, a plurality of n-type polycrystalline silicon layers formed on the first dielectric film, extending radially from the vicinity of a chip center, and metal film layers formed in contact with the n-type polycrystalline silicon layers, wherein hot junctions are formed at the chip central side and cold junctions are formed at the chip peripheral side of the n-type polycrystalline silicon layers, respectively, by contacting the n-type polycrystalline silicon layer and the metal film layer, and at least one series of thermoelectric elements is formed on the first dielectric film by connecting alternately and successively, by the metal film layer, the hot junction and cold junction of the neighboring n-type polycrystalline silicon layer.