Patents by Inventor Tadashi MISUMI
Tadashi MISUMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220181448Abstract: A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20>direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100>direction.Type: ApplicationFiled: February 23, 2022Publication date: June 9, 2022Inventors: JUNICHI UEHARA, TAKEHIRO KATO, TADASHI MISUMI, YUSUKE YAMASHITA
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Patent number: 11107911Abstract: A semiconductor device includes an inversion type semiconductor element, which has: a substrate; a drift layer; a saturation current suppression layer; a current dispersion layer; a base region; a source region; a connection layer; a plurality of trench gate structures; an interlayer insulation film; a source electrode; and a drain electrode. A channel region is provided in a portion of the base region in contact with each trench gate structure by applying a gate voltage to the gate electrode and applying a normal operation voltage as a drain voltage to the drain electrode; and a current flows between the source electrode and the drain electrode through the source region and the JFET portion.Type: GrantFiled: December 30, 2019Date of Patent: August 31, 2021Assignee: DENSO CORPORATIONInventors: Yuichi Takeuchi, Shuhei Mitani, Yasuhiro Ebihara, Yusuke Yamashita, Tadashi Misumi
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Publication number: 20200161467Abstract: A semiconductor device includes an inversion type semiconductor element, which has: a substrate; a drift layer; a saturation current suppression layer; a current dispersion layer; a base region; a source region; a connection layer; a plurality of trench gate structures; an interlayer insulation film; a source electrode; and a drain electrode. A channel region is provided in a portion of the base region in contact with each trench gate structure by applying a gate voltage to the gate electrode and applying a normal operation voltage as a drain voltage to the drain electrode; and a current flows between the source electrode and the drain electrode through the source region and the JFET portion.Type: ApplicationFiled: December 30, 2019Publication date: May 21, 2020Inventors: Yuichi TAKEUCHI, Shuhei MITANI, Yasuhiro EBIHARA, Yusuke YAMASHITA, Tadashi MISUMI
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Publication number: 20190300207Abstract: When a first operating number being the number of thrusters in a first thruster group (115) that are operated and a second operating number being the number of thrusters in a second thruster group (125) that are operated are different, a ratio between a first distance D1 in a +Y direction from a satellite gravity center (101) to the first thruster group and a second distance D2 in a ?Y direction from the satellite gravity center to the second thruster group becomes inverse to a ratio between the first operating number and the second operating number.Type: ApplicationFiled: September 29, 2016Publication date: October 3, 2019Applicant: Mitsubishi Electric CorporationInventors: Hisayoshi IZUMISAWA, Tadashi MISUMI, Atsushi TANAKA, Shunichi KAWAMURA
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Publication number: 20190109187Abstract: A switching element including: a bottom insulating layer disposed at a bottom of a trench; a side surface insulating film covering a side surface of the trench; and a gate electrode disposed inside the trench and insulated from a semiconductor substrate. The semiconductor substrate has a bottom region and a connection region. The bottom region is in contact with the bottom insulating layer. The connection region is in contact with the bottom insulating layer and the side surface insulating film, and connects a body region to the bottom region. An area of the connection region in which the bottom insulating layer contacts to the connection region includes an area with lower a second conductivity-type impurity concentration than a minimum value of the second conductivity-type impurity concentration in an area of the connection region in which the side surface insulating film contacts the connection region.Type: ApplicationFiled: April 18, 2017Publication date: April 11, 2019Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Tadashi MISUMI, Hiroomi EGUCHI, Yusuke YAMASHITA, Yasushi URAKAMI
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Patent number: 9966372Abstract: A semiconductor device includes: a plurality of trenches provided in an upper surface of a semiconductor substrate; trench electrodes each provided in a corresponding one of the trenches; a first semiconductor layer of a first conductivity type provided in a first range interposed between adjacent ones of the trenches; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; an interlayer insulation film provided on the upper surface of the semiconductor substrate and including a plurality of contact holes; a first conductor layer provided in each of the contact holes; and a surface electrode provided on the interlayer insulation film and connected to each of the first conductor layers.Type: GrantFiled: June 8, 2015Date of Patent: May 8, 2018Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Satoru Kameyama, Tadashi Misumi, Jun Okawara, Shinya Iwasaki
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Patent number: 9735081Abstract: A semiconductor device capable of carrying out temperature detection appropriately by a temperature sensor is provided. In a semiconductor device disclosed herein, a first width of a first portion within a front surface insulating film (that is, part located in an upper part of an active region among a part extending along a first side of a front surface electrode that is closer to the temperature sensor) is wider than a second width of a second portion within the front surface insulating film (that is, part located in the upper part of the active region among a part extending along a second side of the front surface electrode).Type: GrantFiled: May 8, 2015Date of Patent: August 15, 2017Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Tadashi Misumi
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Patent number: 9679989Abstract: A method of manufacturing an insulated gate type switching device includes forming a gate trench that has a first portion with a first width in a first direction and a second portion with a second width in the first direction, the second width being wider than the first width. In an oblique implantation, second conductivity type impurities are irradiated at an irradiation angle inclined around an axis orthogonal to the first direction. The first width, the second width, and the irradiation angle are set such that the second conductivity type impurities are suppressed, at a first side surface of the first portion, from being implanted into a part below a lower end of a second semiconductor region, and at a second side surface of the second portion, the impurities are implanted into the part below the lower end of the second semiconductor region.Type: GrantFiled: August 12, 2016Date of Patent: June 13, 2017Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Toru Onishi, Atsushi Onogi, Tadashi Misumi, Yusuke Yamashita, Yuichi Takeuchi
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Publication number: 20170162563Abstract: A semiconductor device includes: a plurality of trenches provided in an upper surface of a semiconductor substrate; trench electrodes each provided in a corresponding one of the trenches; a first semiconductor layer of a first conductivity type provided in a first range interposed between adjacent ones of the trenches; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; an interlayer insulation film provided on the upper surface of the semiconductor substrate and including a plurality of contact holes; a first conductor layer provided in each of the contact holes; and a surface electrode provided on the interlayer insulation film and connected to each of the first conductor layers.Type: ApplicationFiled: June 8, 2015Publication date: June 8, 2017Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Satoru KAMEYAMA, Tadashi MISUMI, Jun OKAWARA, Shinya IWASAKI
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Publication number: 20170154833Abstract: A semiconductor device capable of carrying out temperature detection appropriately by a temperature sensor is provided. In a semiconductor device disclosed herein, a first width of a first portion within a front surface insulating film (that is, part located in an upper part of an active region among a part extending along a first side of a front surface electrode that is closer to the temperature sensor) is wider than a second width of a second portion within the front surface insulating film (that is, part located in the upper part of the active region among a part extending along a second side of the front surface electrode).Type: ApplicationFiled: May 8, 2015Publication date: June 1, 2017Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Tadashi MISUMI
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Publication number: 20170092742Abstract: A method of manufacturing an insulated gate type switching device includes forming a gate trench that has a first portion with a first width in a first direction and a second portion with a second width in the first direction, the second width being wider than the first width. In an oblique implantation, second conductivity type impurities are irradiated at an irradiation angle inclined around an axis orthogonal to the first direction. The first width, the second width, and the irradiation angle are set such that the second conductivity type impurities are suppressed, at a first side surface of the first portion, from being. implanted into a part below a lower end of a second semiconductor region, and at a second side surface of the second portion, the impurities are implanted into the part below the lower end of the second semiconductor region.Type: ApplicationFiled: August 12, 2016Publication date: March 30, 2017Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Toru ONISHI, Atsushi ONOGI, Tadashi MISUMI, Yusuke YAMASHITA, Yuichi TAKEUCHI
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Patent number: 9006839Abstract: In a semiconductor substrate of a semiconductor device, a drift layer, a body layer, an emitter layer, and a trench gate electrode are formed. When the semiconductor substrate is viewed in a plane manner, the semiconductor substrate is divided into a first region covered with a heat dissipation member, and a second region not covered with the heat dissipation member. A density of trench gate electrodes in the first region is equal to a density of trench gate electrodes in the second region. A value obtained by dividing an effective carrier amount of channel parts formed in the first region by an area of the first region is larger than a value obtained by dividing an effective carrier amount of channel parts formed in the second region by an area of the second region.Type: GrantFiled: April 25, 2014Date of Patent: April 14, 2015Assignee: Toyota Jidosha Kabushiki KaishaInventor: Tadashi Misumi
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Patent number: 8928087Abstract: A semiconductor device is equipped with an element region, an electrode, a thermal conduction portion, and a protective membrane. The element region is equipped with a plurality of gate electrodes. The electrode is formed on a surface of the element region. The thermal conduction portion is located on a surface side of a central portion of the electrode, and is higher in thermal conductivity than the element region. The protective membrane is formed on a peripheral portion that is located on the surface side of the electrode and surrounds a periphery of the central portion. In the element region, an emitter central region that is formed on a back side of the central portion of the electrode remains on for a longer time than an emitter peripheral region that is formed on a back side of the peripheral portion of the electrode.Type: GrantFiled: November 28, 2012Date of Patent: January 6, 2015Assignee: Toyota Jidosha Kabushiki KaishaInventor: Tadashi Misumi
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Publication number: 20140346561Abstract: In a semiconductor substrate of a semiconductor device, a drift layer, a body layer, an emitter layer, and a trench gate electrode are formed. When the semiconductor substrate is viewed in a plane manner, the semiconductor substrate is divided into a first region covered with a heat dissipation member, and a second region not covered with the heat dissipation member. A density of trench gate electrodes in the first region is equal to a density of trench gate electrodes in the second region. A value obtained by dividing an effective carrier amount of channel parts formed in the first region by an area of the first region is larger than a value obtained by dividing an effective carrier amount of channel parts formed in the second region by an area of the second region.Type: ApplicationFiled: April 25, 2014Publication date: November 27, 2014Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Tadashi MISUMI
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Patent number: 8846544Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.Type: GrantFiled: February 28, 2014Date of Patent: September 30, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Tadashi Misumi, Shinya Iwasaki, Takahide Sugiyama
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Publication number: 20140179116Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.Type: ApplicationFiled: February 28, 2014Publication date: June 26, 2014Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: TADASHI MISUMI, SHINYA IWASAKI, TAKAHIDE SUGIYAMA
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Patent number: 8698285Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.Type: GrantFiled: December 14, 2010Date of Patent: April 15, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Tadashi Misumi, Shinya Iwasaki, Takahide Sugiyama
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Publication number: 20130134521Abstract: A semiconductor device is equipped with an element region, an electrode, a thermal conduction portion, and a protective membrane. The element region is equipped with a plurality of gate electrodes. The electrode is formed on a surface of the element region. The thermal conduction portion is located on a surface side of a central portion of the electrode, and is higher in thermal conductivity than the element region. The protective membrane is formed on a peripheral portion that is located on the surface side of the electrode and surrounds a periphery of the central portion. In the element region, an emitter central region that is formed on a back side of the central portion of the electrode remains on for a longer time than an emitter peripheral region that is formed on a back side of the peripheral portion of the electrode.Type: ApplicationFiled: November 28, 2012Publication date: May 30, 2013Inventor: Tadashi MISUMI
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Publication number: 20120007222Abstract: The present specification provides a method of efficiently manufacturing diodes in which recovery surge voltage is hardly generated. The method manufactures a diode including a high concentration n-type semiconductor layer, a medium concentration n-type semiconductor layer formed on the high concentration n-type semiconductor layer, a low concentration n-type semiconductor layer formed on the medium concentration n-type semiconductor layer, and a p-type semiconductor layer formed on the low concentration n-type semiconductor layer. This manufacturing method includes growing the low concentration n-type semiconductor layer on an n-type semiconductor substrate by epitaxial growth, wherein a concentration of n-type impurities in the low concentration n-type semiconductor layer is lower than that in the n-type semiconductor substrate, and forming the high concentration n-type semiconductor layer by injecting n-type impurities to a lower surface of the n-type semiconductor substrate.Type: ApplicationFiled: September 23, 2011Publication date: January 12, 2012Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Tadashi MISUMI, Kimimori HAMADA
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Publication number: 20110140243Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.Type: ApplicationFiled: December 14, 2010Publication date: June 16, 2011Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Tadashi MISUMI, Shinya IWASAKI, Takahide SUGIYAMA